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Quantum dot light-emitting layer and quantum dot light-emitting diode

A quantum dot light-emitting and quantum dot technology, which is applied in the direction of organic semiconductor devices, electric solid devices, semiconductor devices, etc., can solve the problems of reducing the service life of the device, uneven quantum dot light-emitting layer, pinholes, etc.

Active Publication Date: 2021-09-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot light-emitting layer and a quantum dot light-emitting diode, aiming to solve the phenomenon of unevenness of the existing quantum dot light-emitting layer and the occurrence of "pinholes", thereby reducing the cost of the device. Technical issues of service life

Method used

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  • Quantum dot light-emitting layer and quantum dot light-emitting diode
  • Quantum dot light-emitting layer and quantum dot light-emitting diode
  • Quantum dot light-emitting layer and quantum dot light-emitting diode

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preparation example Construction

[0028] On the other hand, an embodiment of the present invention provides a method for preparing a quantum dot light-emitting layer, comprising the following steps:

[0029] S01: Provide a substrate and prepare a solution containing quantum dots and one or more ionic liquid materials;

[0030] S02: Deposit the solution on the substrate, and then perform annealing treatment to obtain the quantum dot light-emitting layer.

[0031] The preparation method of the quantum dot light-emitting layer provided by the embodiment of the present invention has a simple process and low cost. The solution prepared containing quantum dots and ionic liquid materials is deposited on the substrate and annealed to obtain a layer that is uniform, dense, balanced and smooth, and has excellent stability. Quantum dot luminescent layer.

[0032] Further, in the above step S01, the substrate may be a substrate for preparing quantum dot light-emitting diodes. If the substrate is provided with an anode an...

Embodiment 1

[0060] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0061] First put [BMIM]BF 4 Add to the n-octane solution of CdSe / ZnS quantum dots to prepare [BMIM]BF 4 Mixed solution with CdSe / ZnS, where the concentration of CdSe / ZnS is 30mg / mL, [BMIM]BF 4 The mass ratio to CdSe@ZnS is 1:27, and then the device is prepared according to the following steps:

[0062] Spin-coat a layer of PEDOT:PSS hole injection layer on the ITO conductive glass;

[0063] Spin-coat one layer of TFB hole transport layer on PEDOT:PSS hole injection layer;

[0064] The above [BMIM]BF 4 A mixed solution of CdSe / ZnS was spin-coated on the TFB hole transport layer at 3000rpm / s, and then heated at 80°C for 15min to obtain a dense layer of [BMIM]BF 4 -CdSe / ZnS ionic liquid modified quantum dot light-emitting layer;

[0065] In [BMIM] BF 4 -Spin-coating a layer of ZnO electron transport layer on the CdSe / ZnS ionic liquid modified quantum dot light-emitting layer;

[0...

Embodiment 2

[0068] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0069] First put [BMIM]BF 4 Add to the n-octane solution of CdSe / ZnS quantum dots, and then add oleylamine to prepare oleylamine, [BMIM]BF 4 Mixed solution with CdSe / ZnS, where the concentration of CdSe / ZnS is 30mg / mL, [BMIM]BF 4 The mass ratio of CdSe@ZnS to CdSe@ZnS is 1:27, and the mass ratio of oleylamine added is 0.5wt%, and then the device is prepared according to the following steps:

[0070] Spin-coat a layer of PEDOT:PSS hole injection layer on the ITO conductive glass;

[0071] Spin-coat one layer of TFB hole transport layer on PEDOT:PSS hole injection layer;

[0072] The above oleylamine, [BMIM]BF 4 A mixed solution of CdSe / ZnS was spin-coated on the TFB hole transport layer at 3000rpm / s, and then heated at 80°C for 15min to obtain a dense layer of [BMIM]BF 4 -CdSe / ZnS ionic liquid modified quantum dot light-emitting layer;

[0073] Spin-coat a layer of ZnO electron tr...

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Abstract

The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting layer and a quantum dot light-emitting diode. The material of the quantum dot light-emitting layer includes quantum dots and one or more ionic liquid materials dispersed between the quantum dots. The quantum dot light emitting layer can be used in various electronic devices, such as quantum dot light emitting diodes, organic light emitting diodes, photoelectric sensors, photodetectors, lasers, thin film transistors, complementary metal oxide semiconductor devices and the like.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting layer and a quantum dot light-emitting diode. Background technique [0002] Quantum dots light-emitting diode (QLED) is an emerging display device whose principle and structure are similar to those of organic light-emitting diodes (OLED): quantum dots and organic / inorganic semiconductors Driven by an external DC electric field, a flat panel display device in which excitons recombine and emit light. Compared with OLED, QLED is characterized by the fact that its luminescent material is quantum dots prepared by colloid method. The unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect of quantum dots make it exhibit excellent physical properties, especially excellent optical properties; compared with organic fluorescent dyes, colloidal quantum dots have adjustable spectrum, luminescence Wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/60H10K85/631H10K50/115H10K2102/00H10K71/00
Inventor 梁柱荣曹蔚然钱磊
Owner TCL CORPORATION
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