A kind of three-layer nanoporous film and its preparation method and application
A nanoporous film and nanofilm technology, applied in the field of biochemical detection materials, can solve the problems of inaccurate detection results and low spatial resolution of DNA sequencing of three-layer nanoporous film, and achieve good adhesion, stable thin layer quality, Uniform and controllable thickness
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Embodiment 1
[0046] A preparation method of a three-layer nanoporous film, such as Figure 1~4 , shown in 6-8, 10, including the following steps:
[0047] S1. On the surface of both sides of the doped single crystal silicon substrate 1, adopt low-pressure chemical vapor deposition (LP-CVD) to deposit Si 3 N 4 layers (20 and 30), in Si 3 N 4 Layer surface continues to SiO 2 layers (21 and 31), forming Si 3 N 4 / SiO 2 double-layer nanostructure, where Si 3 N 4 layer thickness of 30nm, SiO 2 The thickness of the layer is 40 nm;
[0048] S2. Using atomic layer deposition of Si on one side of the substrate 3 N 4 / SiO 2 Deposition of Si on bilayer nanofilms 3 N 4 Layer 22, Si 3 N 4 layer thickness 5nm, forming Si 3 N 4 / SiO 2 / Si 3 N 4 Three-layer nanostructure;
[0049] S3. Si on the above substrate 3 N 4 / SiO 2 One side of the bilayer nanostructure etches Si by reactive ion etching 3 N 4 / SiO 2 The layer forms the matrix release window 4, and the size range of the ...
Embodiment 2
[0054] A preparation method of a three-layer nanoporous film, comprising the steps of:
[0055] S1. Deposit Si on both sides of the doped polysilicon substrate by low-pressure chemical vapor deposition (LP-CVD) 3 N 4 layer, in Si 3 N 4 Layer surface continues to SiO 2 layer, forming Si 3 N 4 / SiO 2 double-layer nanostructure, where Si 3 N 4 layer thickness of 100nm, SiO 2 The thickness of the layer is 100nm;
[0056] S2. Using atomic layer deposition of Si on one side of the substrate 3 N 4 / SiO 2 Deposition of Si on bilayer nanofilms 3 N 4 layer, Si 3 N 4 layer thickness 5nm, forming Si 3 N 4 / SiO 2 / Si 3 N 4 Three-layer nanostructure;
[0057] S3. Si on the above substrate 3 N 4 / SiO 2 One side of the bilayer nanostructure etches Si by reactive ion etching 3 N 4 / SiO 2 The layer forms a matrix release window with a size range of 800 μm × 800 μm;
[0058] S4. Use an alkaline solution to etch the substrate from the substrate release window to obtai...
Embodiment 3
[0062] A preparation method of a three-layer nanoporous film, comprising the steps of:
[0063] S1. adopt low-pressure chemical vapor deposition (LP-CVD) to deposit Si on the surface of both sides of the germanium substrate 1 after doping 3 N 4 layer, in Si 3 N 4 Layer surface continues to SiO 2 layer, forming Si 3 N 4 / SiO 2 double-layer nanostructure, where Si 3 N 4 layer thickness of 200nm, SiO 2 The thickness of the layer is 200nm;
[0064] S2. Using atomic layer deposition of Si on one side of the substrate 3 N 4 / SiO 2 Deposition of Si on bilayer nanofilms 3 N 4 layer, Si 3 N 4 layer thickness 5nm, forming Si 3 N 4 / SiO 2 / Si 3 N 4 Three-layer nanostructure;
[0065] S3. Si on the above substrate 3 N 4 / SiO 2 One side of the bilayer nanostructure etches Si by reactive ion etching 3 N 4 / SiO 2 The layer forms a matrix release window with a size range of 800 μm × 800 μm;
[0066] S4. Use an alkaline solution to etch the substrate from the substra...
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