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Resist substrate pretreatment composition and method for producing resist substrate

A resist and pretreatment technology, applied in the direction of detergent composition, surface active detergent composition, chemical instruments and methods, etc., can solve the problems of large wetting expansion, low viscosity, exudation, etc.

Active Publication Date: 2021-09-10
SANYO CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in order to use the inkjet method, it is necessary to use a resin composition with a lower viscosity than the photocurable resin composition used in the conventional screen printing method, and there is a problem of bleeding during the curing process.
[0004] In response to these problems, countermeasures such as improving the reactivity of the resist ink used in the inkjet method and improving the adhesion have been taken, but in either case, the wetting spread on the substrate is large, and it is not enough for fine patterning. (see Patent Document 3, Patent Document 4)
In addition, the method of treating the copper surface with an organic substance such as fatty acid or resin acid before printing described in Patent Document 5 has also been studied, but it is not sufficient.

Method used

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  • Resist substrate pretreatment composition and method for producing resist substrate
  • Resist substrate pretreatment composition and method for producing resist substrate
  • Resist substrate pretreatment composition and method for producing resist substrate

Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0102] Put 205 parts of chlorododecane and 103 parts of diethylenetriamine into a stainless steel autoclave with stirring and temperature adjustment functions, replace the mixed system with nitrogen, and carry out approx. 1 hour reaction. Cool after the reaction, add aqueous sodium hydroxide solution, stir and let stand for liquid separation. After removing the lower layer (aqueous layer), the gas layer part was replaced with nitrogen, and vacuum distillation was performed (distillation conditions of the main product: 185° C. to 240° C., 5 mmHg to 20 mmHg). Put water and 271 parts of the main product into a glass reaction container, while blowing nitrogen gas into the gas layer, add an aqueous solution of monochloroacetic acid (95 parts) at 50°C to 100°C, and react at 90°C to 110°C Afterwards, the pH was adjusted with aqueous sodium hydroxide solution to obtain sodium acetate (A1-1), a 2-mol adduct of laurylamine ethyleneimine.

manufacture example 2

[0104] Put 205 parts of chlorododecane and 60 parts of ethylenediamine into a stainless steel autoclave with stirring and temperature adjustment functions, replace the inside of the mixed system with nitrogen, and then react at 80°C to 120°C for about 1 hour . Cool after the reaction, add aqueous sodium hydroxide solution, stir and let stand for liquid separation. After removing the lower layer (aqueous layer), the gas layer part was replaced with nitrogen, and vacuum distillation was performed (distillation conditions of the main product: 185° C. to 240° C., 5 to 20 mmHg). Put water and 271 parts of the main product into a glass reaction container, while blowing nitrogen gas into the gas layer, add an aqueous solution of monochloropropionic acid (109 parts) at 50 ° C to 100 ° C, and then add it at 90 ° C ~ 110 ° C After the reaction, the pH was adjusted with aqueous sodium hydroxide solution to obtain sodium propionate (A1-2), a 1 mole adduct of laurylamine ethyleneimine.

manufacture example 3

[0106] Put 205 parts of chlorododecane and 103 parts of diethylenetriamine into a stainless steel autoclave with stirring and temperature adjustment functions, replace the mixed system with nitrogen, and carry out approx. 1 hour reaction. Cool after the reaction, add aqueous sodium hydroxide solution, stir and let stand for liquid separation. After removing the lower layer (aqueous layer), the gas layer part was replaced with nitrogen, and vacuum distillation was performed (distillation conditions of the main product: 185° C. to 240° C., 5 to 20 mmHg). Put water and 271 parts of the main product into a glass reaction container, while blowing nitrogen gas into the gas layer, add an aqueous solution of monochloropropionic acid (109 parts) at 50 ° C to 100 ° C, and then add it at 90 ° C ~ 110 ° C After the reaction, the pH was adjusted with aqueous sodium hydroxide solution to obtain sodium propionate (A1-3), a 2-mol adduct of laurylamine ethyleneimine.

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Abstract

The present invention provides a resist substrate pretreatment composition capable of suppressing wetting spread after resist ink is applied by an inkjet method and capable of forming a fine resist pattern with high precision. The resist substrate pretreatment composition of the present invention is a resist substrate pretreatment composition containing an amphoteric surfactant (A1), an anionic surfactant (A2) and water, and is characterized in that, from the above-mentioned amphoteric surfactant The numerical value obtained by subtracting the pH value of the above-mentioned resist substrate pretreatment composition from the numerical value of the isoelectric point of the agent (A1) ([the numerical value of the isoelectric point of the amphoteric surfactant (A1)]−[the numerical value of the resist The value of the pH of the substrate pretreatment composition]) is -3 to 4, the number of moles of the above-mentioned amphoteric surfactant (A1) is relative to the number of moles of the above-mentioned amphoteric surfactant (A1) and the number of moles of the above-mentioned anionic surfactant (A2 ) ratio of the total number of moles in moles ([the number of moles of the amphoteric surfactant (A1)] / ([the number of moles of the amphoteric surfactant (A1)]+[the number of moles of the anionic surfactant (A2) ])) ranges from 0.1 to 0.9.

Description

technical field [0001] The present invention relates to a resist substrate pretreatment composition and a method for producing a resist substrate. Specifically, it relates to a resist substrate pretreatment composition used before patterning a copper or copper alloy surface using a solder resist, and a method for producing a resist substrate using the resist substrate pretreatment composition. Background technique [0002] In recent years, patterning using an inkjet method has been proposed as a solder resist for protecting a conductive circuit formed on a wiring board (see Patent Document 1 and Patent Document 2). In the conventional screen printing method, in order to form a pattern, pre-drying, development of the coating film, post-curing, and removal of uncured resist are required after coating the insulating film. On the other hand, when the inkjet method is used, the insulating film ink is ejected and patterned, and then exposed to light and cured to form a pattern. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05K3/28
CPCH05K3/28C11D1/29C11D1/521C11D1/94H05K1/09H05K3/287H05K2203/013
Inventor 竹田拓马佐藤祥平
Owner SANYO CHEM IND LTD
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