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Seed crystal processing method used for growth of high quality SiC crystals

One treatment method, high quality technology

Inactive Publication Date: 2019-07-09
北京天科合达新材料有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the above technical problems, no effective solution has been proposed yet.

Method used

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  • Seed crystal processing method used for growth of high quality SiC crystals
  • Seed crystal processing method used for growth of high quality SiC crystals
  • Seed crystal processing method used for growth of high quality SiC crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Put the 4-inch SiC seed crystal 3 bonded on the graphite holder 1 on the crucible 5 and place it in a high-temperature graphite heating furnace with good airtightness and thermal insulation, vacuumize to 5 Pa, and then fill it with Ar to 30 kPa; Then evacuate to 5 Pa, pass H2 / Ar=0.1 mixed gas to 5 kPa; take 3 hours to raise the temperature to 1750 ° C, keep the temperature for 8 hours, and then take 10 hours to cool down to room temperature.

Embodiment 2

[0026] Put the 6-inch conductive SiC seed crystal 3 bonded on the graphite support 1 on the crucible 5 and place it in a high-temperature medium-frequency induction heating furnace with good airtightness and heat preservation, evacuate to 5 Pa, and fill it with Ar to 50 K Pa; then evacuate to 5 Pa, and pass H2 / Ar=0.3 mixed gas to 8 kPa; take 4 hours to raise the temperature to 1850 ° C, keep the temperature for 7 hours, and then take 15 hours to cool down to room temperature.

Embodiment 3

[0028] Put the 6-inch conductive SiC seed crystal 3 bonded on the graphite support 1 on the crucible 5 and place it in a high-temperature medium-frequency induction heating furnace with good airtightness and heat preservation, evacuate to 5 Pa, and fill it with Ar to 40 K Pa; then evacuate to 5 Pa, and pass H2 / Ar=0.2 mixed gas to 8 kPa; take 4 hours to raise the temperature to 1800 ° C, keep the temperature for 8 hours, and then take 12 hours to cool down to room temperature.

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Abstract

The invention discloses a seed crystal processing method used for growth of high quality SiC crystals. The seed crystal processing method used for growth of high quality SiC crystals comprises following steps: SiC seed crystals adhered onto a graphite tray are introduced into a crucible, and the crucible is introduced into a high temperature furnace, a certain amount of H2 is introduced into Ar protective atmosphere, the temperature is increased to 1750 to 1900 DEG C, and at high temperature, H2 is reacted with SiC and a carbonized bonding agent, so that seed crystal surface scratches are removed, and the bonding agent left on surfaces is removed; and in addition, the SiC seed crystals are maintained at the high temperature, and then are cooled slowly, so that stress generated because of plastic deformation in bonding process is eliminated; after pretreatment, the seed crystals are used for SiC crystal growth, so that a technical problem that dislocation density increases rapidly at crystal growth early period is solved, and foundation is established for obtaining of high quality SiC crystals.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, and mainly relates to a seed crystal treatment method for growing high-quality silicon carbide (SiC) crystals. Background technique [0002] Wide bandgap semiconductor materials represented by SiC and gallium nitride (GaN) are the third-generation semiconductors after silicon (Si) and gallium arsenide (GaAs). Compared with Si and GaAs traditional semiconductor materials, SiC has the advantages of high thermal conductivity, high breakdown field strength, high saturation electron drift rate and high bonding energy. Its excellent performance can meet the requirements of modern electronic technology for high temperature, high frequency, high power and New requirements for radiation resistance are therefore considered to be one of the most promising materials in the field of semiconductor materials. In addition, because hexagonal SiC has similar lattice constants and therma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36
Inventor 王波王光明彭同华
Owner 北京天科合达新材料有限公司
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