Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene/Mn5Ge3/germanium (110) heterojunction and preparation method thereof

A graphene and heterojunction technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, ion implantation and plating, etc., can solve the problem that single-crystal graphene does not have an intrinsic energy gap, change the electrical properties of graphene, Graphene's actual performance discount and other issues, to achieve the effect of high-precision surface characterization analysis, less surface impurities, and smooth surface

Inactive Publication Date: 2019-07-12
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the invention is to provide a graphene / Mn 5 Ge 3 / germanium (110) heterojunction and preparation method thereof, thereby solving the problem that single crystal graphene does not have an intrinsic energy gap in the prior art, so it cannot be used as a semiconductor device, and due to the gap between single crystal graphene and the substrate The coupling effect of the graphene will change the electrical properties of graphene, which will greatly reduce the actual performance of graphene.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene/Mn5Ge3/germanium (110) heterojunction and preparation method thereof
  • Graphene/Mn5Ge3/germanium (110) heterojunction and preparation method thereof
  • Graphene/Mn5Ge3/germanium (110) heterojunction and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Put a germanium (110) substrate single-layer graphene with 50% coverage into a sample preparation vacuum chamber with an evaporation source and a heating stage, and the vacuum degree of the sample preparation vacuum chamber is 1×10 -9 millibar. Use a heating stage to degas it. The emission voltage of the heating stage is 1000 volts. Adjust the filament current of the heating stage to keep the emission current at 9 mA, and heat for 24 hours. During this process, the vacuum degree of the sample preparation chamber will deteriorate for a period of time, and the background vacuum can be used to assist in judging whether the degassing is completed.

[0035] After the degassing is completed, change the sample heating temperature to 625 Kelvin, turn on the evaporation source whose source material is metal manganese, the emission voltage of the electron beam is 1.5 kV, adjust the heating current of the evaporation source near 5 amperes (±0.5 amperes), so that The emission curr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a graphene / Mn5Ge3 / germanium (110) heterojunction and a preparation method thereof. The preparation method comprises the following steps: S1: a single-layer graphene sample is provided, and the coverage rate of the single-layer graphene on a germanium (110) substrate is 30-70%; S2: the single-layer graphene sample is placed into a sample preparation vacuum chamber to be heated, the vacuum degree is 5*10<-10> - 1.5*10<-9> millibars, and the heating temperature is 1050-1150 K; S3: the heating temperature of the single-layer graphene sample is changed to 600-650 K, and an evaporation source is used for evaporation deposition of metal manganese on the single-layer graphene sample; and S4: the evaporation source is turned off, and the heating temperature is maintained unchanged and heating continues. The preparation method has advantages of simple technological process and good controllability. The graphene / Mn5Ge3 / germanium (110) heterojunction can be prepared into a semiconductor device due to semiconductor properties of the graphene electronic state.

Description

technical field [0001] The present invention relates to, more specifically relate to a kind of graphene / Mn 5 Ge 3 / germanium (110) heterojunction and its preparation method. Background technique [0002] Graphene is a single-layer graphite, that is, each carbon atom forms a two-dimensional hexagonal lattice structure in a plane in a sp2 hybridized manner. Graphene has excellent optical, electrical, mechanical, material processing and other properties. Because of its carrier mobility ten times higher than that of silicon and its half-integer quantum Hall effect at room temperature under an external magnetic field, it is generally considered to be an alternative to silicon. Potential to become the next generation of semiconductor materials. [0003] The currently prepared single crystal graphene generally has two disadvantages, which limit its application in the semiconductor field. One is that graphene is a zero-bandgap semiconductor and does not have an intrinsic energy ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/02C23C14/30C23C14/14H01L21/34H01L21/02
CPCC23C14/14C23C14/30C30B25/18C30B29/02H01L21/02381H01L21/02444H01L21/02521H01L21/02614H01L21/34
Inventor 李昂崔奋为朱海龙黄本锐马妮
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com