Method for regulating surface coarsening rate of film in in-situ large range

A surface roughening, large-scale technology, applied in metal material coating process, vacuum evaporation coating, coating, etc. simple craftsmanship

Active Publication Date: 2019-07-16
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although researchers attach great importance to the study of the microscopic mechanism of film surface roughening and correlate it with atomic diffusion, since atomic diffusion is random, complex, and difficult to observe directly, the dependence of microscopic atomic diffusion on macroscopic surface roughening The relationship has not been well explored, and the method of precisely controlling the surface roughness at the atomic level has not been proposed; (2) There is a lack of relevant methods and technologies that can be used for reference
The existing technology disclos

Method used

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  • Method for regulating surface coarsening rate of film in in-situ large range
  • Method for regulating surface coarsening rate of film in in-situ large range
  • Method for regulating surface coarsening rate of film in in-situ large range

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Experimental program
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Effect test

Embodiment 1

[0022] A method for in-situ large-scale regulation and control of the surface roughening rate of thin films, including a parent material, hafnium nitride is selected as the parent material. Amorphous encapsulation hinders uphill diffusion to obtain a low coarsening rate; by doping silver elements that are non-wetting with the parent material, the non-wetting property is used to hinder downhill diffusion and a high coarsening rate is obtained.

[0023] Specifically, the following steps are included:

[0024] a. Select the silicon wafer substrate as the substrate, ultrasonically clean the silicon wafer substrate with acetone, absolute ethanol, and distilled water in sequence, and dry it after cleaning to obtain the target material for use;

[0025] b. Use discharge gas during the deposition process, adjust the working pressure, control the sputtering power of the pure hafnium target and the required target, and perform sputtering according to the required conditions. After the s...

Embodiment 2

[0030] A method for in-situ large-scale regulation and control of the surface roughening rate of thin films, including a parent material, hafnium nitride is selected as the parent material. Amorphous encapsulation hinders uphill diffusion to obtain a low coarsening rate; by doping gold elements that are non-wetting with the parent material, the non-wetting property is used to hinder downhill diffusion and a high coarsening rate is obtained.

[0031] Specifically, the following steps are included:

[0032] a. Select the silicon wafer substrate as the substrate, ultrasonically clean the silicon wafer substrate with acetone, absolute ethanol, and distilled water in sequence, and dry it after cleaning to obtain the target material for use;

[0033] b. Use discharge gas during the deposition process, adjust the working pressure, control the sputtering power of the pure hafnium target and the required target, and perform sputtering according to the required conditions. After the spu...

Embodiment 3

[0036] A method for in-situ large-scale control of the roughening rate of the film surface, including the parent material, the sample material is hafnium oxide, in the preparation process, the tungsten oxide amorphous layer is introduced by using the method of magnetron co-sputtering The encapsulation hinders the uphill diffusion to obtain a low coarsening rate; by doping the gold element which is non-wettable with the parent material, the non-wetting property is used to hinder the downhill diffusion to obtain a high coarsening rate.

[0037] Specifically, the following steps are included:

[0038] a. Select the silicon wafer substrate as the substrate, ultrasonically clean the silicon wafer substrate with acetone, absolute ethanol, and distilled water in sequence, and dry it after cleaning to obtain the target material for use;

[0039] b. Use discharge gas during the deposition process, adjust the working pressure, control the sputtering power of the pure hafnium target and ...

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Abstract

The invention relates to the field of film surface coarsening rate, in particular to a method for regulating the surface coarsening rate of a film in an in-situ large range. The method comprises a sample material, wherein the sample material is hafnium nitride; in the preparation process, an amorphous layer is introduced by adopting a magnetron co-sputtering method, and an amorphous coating effectis utilized to prevent uphill diffusion so as to obtain a low coarsening rate. According to the method, an atom-increasing diffusion theory is guided to practice, the complex diffusion is simplified,only uphill and downhill diffusion affecting the surface coarsening rate is considered, and a novel method for controlling the surface growth by the atomic level is provided. By introducing the amorphous layer, the uphill and downhill diffusion probability ratio is greatly reduced through preventing the uphill diffusion, so that the very low coarsening rate is obtained, and the ultra-smooth filmis prepared; and due to the fact that elements which are not wetted with a parent material are introduced, the uphill and downhill diffusion probability ratio is greatly reduced through preventing thedownhill diffusion, so that a very high coarsening rate is obtained, and a super-rough film is prepared.

Description

technical field [0001] The invention relates to the field of film surface roughening rate, in particular to a method for in-situ large-scale regulation and control of film surface roughening rate. Background technique [0002] With the rapid development of modern life sciences, physics, and chemistry, more and more thin film materials with special surfaces are being used in emerging technology fields such as energy storage, superconductivity, metasurfaces, catalysis, and biomedicine. In these applications, the control of thin film surface topography and roughness is critical. For example, in order to improve the durability and reliability of small mobile mechanical parts in micro-electro-mechanical systems, the roughness of the durable protective film plated on the sliding pin needs to reach at least an ultra-smooth state below 1nm; in order to reduce frictional resistance and be able to adhere to lubrication For oil, the roughness of the gear surface needs to be in the int...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/08
CPCC23C14/0036C23C14/0641C23C14/0664C23C14/083C23C14/352
Inventor 胡超权蔡继泽张侃郑伟涛
Owner JILIN UNIV
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