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Composition for grinding and grinding method

A technology of composition and compound, which is applied in the direction of polishing composition containing abrasives, chemical instruments and methods, grinding machine tools, etc., which can solve the problems of long-term stability of abrasive compositions, difficulty in removing coarse particles, aggregation of abrasive particles, etc. , to achieve the effect of reducing tiny defects and haze

Active Publication Date: 2021-08-17
NITTA DUPONT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, when using a water-soluble polymer with a large molecular weight, it is difficult to remove coarse particles
Moreover, aggregation of abrasive grains is also easy to occur, so the long-term stability of the polishing composition is also worrying.

Method used

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  • Composition for grinding and grinding method
  • Composition for grinding and grinding method
  • Composition for grinding and grinding method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] The polishing composition of Example 1 contained 3% by mass of colloidal silica, 0.045% by mass of potassium hydroxide, 0.45% by mass of polyglycerin, and 0.045% by mass of polyoxypropylene methyl glucoside. The polishing composition of Example 2 is based on the polishing composition of Example 1, and the content of polyoxypropylene methyl glucoside is 0.075% by mass.

Embodiment 3

[0048] The polishing composition of Example 3 contained 1.5% by mass of colloidal silica, 0.045% by mass of potassium hydroxide, 0.75% by mass of polyglycerin, and 0.060% by mass of polyoxypropylene methyl glucoside. The polishing composition of Example 4 is based on the polishing composition of Example 3 and contains potassium carbonate instead of potassium hydroxide.

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Abstract

The present invention provides a polishing composition capable of further reducing minute defects and haze of a polished wafer. The polishing composition contains silica particles, an inorganic basic compound, polyglycerin, and a multi-chain polyoxyalkylene alkyl ether. The multi-chain polyoxyalkylene alkyl ether is preferably at least one selected from polyoxyalkylene methyl glucoside and polyoxyalkylene polyglyceryl ether. The inorganic basic compound may be at least one selected from alkali metal hydroxides, alkali metal salts, alkaline earth metal hydroxides, and alkaline earth metal salts.

Description

technical field [0001] The invention relates to a polishing composition and a polishing method. Background technique [0002] Polishing of semiconductor wafers by CMP achieves high-precision smoothing and planarization by performing multi-stage polishing in three or four stages. The main purpose of the finishing grinding process at the final stage is to reduce haze (surface fogging) and microdefects. [0003] A polishing composition used in the finishing polishing process of a semiconductor wafer generally contains a water-soluble polymer such as hydroxyethyl cellulose (HEC). Water-soluble polymers have the effect of making the surface of semiconductor wafers hydrophilic, and inhibit the adhesion of abrasive grains to the surface, excessive chemical etching, and aggregation of abrasive grains, which may cause damage to semiconductor wafers. It is known that haze and microdefects are thereby reduced. [0004] Since HEC uses natural cellulose as a raw material, it may conta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14B24B37/00C09G1/02H01L21/304
CPCB24B37/00C09G1/02C09K3/14H01L21/304C09K3/1454
Inventor 杉田规章松下隆幸
Owner NITTA DUPONT INC