Good flexible sandwich type PN junction electrical memory device

A sandwich type, PN junction technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of poor flexibility, poor high temperature resistance, etc., and achieve the effects of simple preparation, high ternary yield, and good flexibility

Active Publication Date: 2019-08-16
SUZHOU UNIV
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Problems solved by technology

[0003] In order to solve the problems of poor high temperature resistance and poor flexibility of current electrical storage materials to the environment, the present invention creatively uses materials with similar bandgap widths but different doping types to prepare a PN junction electrical storage device with a sandwich structure , has achieved good flexibility and high temperature resistance electrical storage performance, which is of great significance in the technology of resistive memory device material selection and mechanism research

Method used

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  • Good flexible sandwich type PN junction electrical memory device
  • Good flexible sandwich type PN junction electrical memory device
  • Good flexible sandwich type PN junction electrical memory device

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Embodiment 1

[0036] Embodiment one: preparation based on semiconductor material (compound A-PC 60 BM) semiconductor electric storage device

[0037] Concrete preparation process is as follows:

[0038] 1. ITO glass (about 2 cm×2 cm in size) was washed with washing powder, ultrapure water, acetone, and ethanol were ultrasonicated for 10 minutes, and ITO was treated with hydrogen peroxide for surface modification, soaked in ethanol, and sealed. use;

[0039] 2. Compound A, PC 60 BM was dissolved in chlorobenzene to configure the solution; figure 1 (a) and (b) are semiconductor material compound A, PC of the present invention respectively 60 Schematic diagram of the molecular structure of BM;

[0040] 3. Dry the ITO glass, and spin-coat the prepared solution on the conductive surface at different speeds;

[0041] 4. Store the prepared device in a cell culture plate and anneal at 80°C for 12 hours to prepare a PN junction electrical storage material; the thickness is 122 nm;

[0042] 5...

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Abstract

The invention discloses a good flexible sandwich type PN junction electrical memory device. The preparation method of the device comprises the following steps: spin-coating a solution on a treated conductive substrate and then performing annealing treatment so as to prepare PN junction electrical memory material; and then preparing electrodes on the PN junction electrical memory material so as toobtain the good flexible sandwich type PN junction electrical memory device. Aiming at the problems of poor environment and high temperature stability, poor repeatability and damage in transportationand utilization of the existing electrical memory material, the compound A-PC60BM is prepared as the aluminum / compound A-PC60BM / ITO glass sandwich structure resistive random access memory (WORM) through the spin-coating mode, and the high performance electrical memory behavior is realized successfully. The preparation process is simple, the device environment and the high temperature stability aregood, the repeatability is good and the flexibility is good so as to be significant for the research of the electrical memory technology in expanding the source of materials and increasing the practical value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and prepares a good flexible electric storage device by spin coating, and in particular relates to a semiconductor electric storage material and a preparation method thereof, and a flexible electric storage device prepared therefrom and a preparation method thereof. Background technique [0002] Entering the 21st century of the information age, people generate hundreds of millions of data. And the preservation of some data needs to rely on a more powerful data backup, recovery, and archiving architecture. For example, legal and regulatory data, which originally only needed to be stored for two years, now needs to be stored for seven years or more. Such rigid requirements have greatly increased the demand for storage technology. Similar to laws and regulations, hospital data and other data that cannot be tampered with, the research and development of storage technology is particul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/12H10K10/50
Inventor 路建美贺竞辉
Owner SUZHOU UNIV
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