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Preparation method of indium oxide ultrafine powder

An ultra-fine powder, indium oxide technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the high requirements of gas phase method equipment parameters, the particle size of nanoparticles is not uniform, and cannot be used. Industrial mass production and other problems, to achieve the effect of reducing the process of preparing precursors, narrowing the particle size distribution range, and low production costs

Active Publication Date: 2019-08-23
云南锡业研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The gas-phase method has high requirements on equipment parameters, and the yield is low, so it cannot be used in industrial mass production; the particle size of nanoparticles obtained by the solid-phase method is generally not uniform, and its application is also limited

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  • Preparation method of indium oxide ultrafine powder

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Effect test

Embodiment 1

[0019] The preparation method of indium oxide ultrafine powder, see figure 1 ,Specific steps are as follows:

[0020] (1) Prepare a sulfuric acid solution with an acidity of 30g / l, add it to a 3L autoclave, then add 140g of indium flowers, the liquid-solid mass ratio is 14:1, seal the lid and ventilate oxygen to a pressure of 1.5MPa in the autoclave, heat and control the reaction temperature At 200±5°C, the reaction time is 12 hours;

[0021] (2) After the reaction is completed, the liquid and solid are separated to obtain the reaction residual acid and the intermediate product indium oxide synthesized by the reaction. The reaction residual acid contains 22.52g / l of sulfate radicals and In0.016g / l, and the reaction residual acid is added with sulfuric acid to return to the pressure The kettle continues to be used for subsequent synthesis reactions. The solid part, the intermediate product indium oxide, is neutralized and washed by adding ammonium bicarbonate aqueous solution ...

Embodiment 2

[0024] The preparation method of indium oxide superfine powder is as follows:

[0025] (1) Prepare a sulfuric acid solution with an acidity of 100g / l, add it to the autoclave, then add 400g of indium flowers, the liquid-solid mass ratio is 5:1, cover the lid and ventilate oxygen to the pressure inside the autoclave to 2MPa, heat and control the reaction temperature at 150 ±5°C, reaction time 10 hours;

[0026] (2) After the reaction is completed, the liquid and solid are separated to obtain the reaction residual acid and the intermediate product indium oxide synthesized by the reaction. The reaction residual acid contains 89.64g / l of sulfate radicals and In0.028g / l, and the reaction residual acid is added with sulfuric acid to return to the pressure The kettle continues to be used for subsequent synthesis reactions. The solid part, the intermediate product indium oxide, is neutralized and washed by adding ammonium bicarbonate aqueous solution to remove residual sulfuric acid, ...

Embodiment 3

[0029] The preparation method of indium oxide superfine powder is as follows:

[0030] (1) Prepare a sulfuric acid solution with an acidity of 200g / l, add it to the autoclave, then add 300g of indium powder, the liquid-solid mass ratio is 8:1, seal the lid and pass oxygen to the pressure of 3MPa in the autoclave, heat and control the reaction temperature at 300 ±5°C, reaction time 4 hours;

[0031] (2) After the reaction is completed, the liquid and solid are separated to obtain the reaction residual acid and the intermediate product indium oxide synthesized by the reaction. The reaction residual acid contains 189.52g / l of sulfate radicals and In0.058g / l. Add sulfuric acid to the reaction residual acid and return to the pressure The kettle continues to be used for subsequent synthesis reactions. The solid part, the intermediate product indium oxide, is neutralized and washed by adding ammonium bicarbonate aqueous solution to remove residual sulfuric acid, centrifugally filtere...

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Abstract

The invention discloses a preparation method of indium oxide ultrafine powder. The preparation method comprises following steps: sulfuric acid and indium are introduced into a sealed container at a mass ratio of 5-14:1, wherein the initial acidity of sulfuric acid is controlled to be 30 to 200g / l; next, oxygen is introduced into the sealed container, the pressure is increased, and heating is carried out, so that indium oxide is obtained through reaction of indium and sulfuric acid, wherein the reaction pressure is controlled to be 1.5MPa or larger, the reaction temperature is controlled to be(150-300)+ / -5 DEG C, and the reaction time is controlled to be 4h or longer; after reaction, liquid solid separation is carried out so as to obtain reaction residual acid and reaction synthesis intermediate indium oxide, an obtained solid product ( the reaction synthesis intermediate indium oxide) is added into ammonium hydrogen carbonate for neutralization washing to remove residual sulfuric acid, and then filtering and drying are carried out; dried intermediate indium oxide is subjected to calcining to obtain indium oxide ultrafine powder with a particle size of 300nm to 30<mu>m. According to the method, at a sealed pressurized oxidation environment, one-step synthesis of indium and sulfuric acid is adopted, so that a precursor preparation process is avoided, the technology process is controllable, industrialized production is convenient to realize, sulfuric acid is only taken as a carrier, consumption amount in reaction process is low, sulfuric acid can be recycled, and raw materialcost is low.

Description

technical field [0001] The invention belongs to the technical field of metallurgy and chemical industry, and in particular relates to a preparation method of indium oxide superfine powder. Background technique [0002] Indium oxide (In 2 o 3 ) is a light yellow powder material at room temperature. The crystal form is mainly cubic and hexagonal. In the internal structure of the crystal, there are many interstitial ions and oxygen vacancies, providing many physical adsorption, chemical adsorption, reaction And conversion sites and channels for electron transfer. As an important n-type semiconductor functional material, indium oxide has a wide band gap, small resistivity and high catalytic activity, and has broad application prospects in the field of optoelectronics, gas sensors and catalysts. Such as In 2 o 3 Applications in the field of photoelectric thin film materials, In 2 o 3 Magnetron sputtering ceramic targets have been widely used in solar cells, optoelectronic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G15/00
CPCC01G15/00C01P2004/61C01P2004/62
Inventor 苏瑞春黄迎红张雄林杨习文
Owner 云南锡业研究院有限公司