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A method for growing perovskite single crystal by layer solution method

A perovskite, solution method technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low success rate of single crystal growth, harsh experimental environment requirements, complicated operation process, etc., and achieve crystal nucleation. The effect of stable growth process, low experimental environment requirements and high crystal quality

Active Publication Date: 2020-09-29
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned methods commonly used at present have strict requirements on the experimental environment, strict temperature control, complex operation process, low success rate of single crystal growth, and low quality and small size of the obtained single crystal.

Method used

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  • A method for growing perovskite single crystal by layer solution method
  • A method for growing perovskite single crystal by layer solution method
  • A method for growing perovskite single crystal by layer solution method

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Add 3 cm of solution B (BiI 3 HI solution, 1mol / L), 1cm of solution B frozen layer (temperature is -20 ℃), 3cm of solution A (PhAI (benzyl ammonium iodide) ethanol solution, 1mol / L), where solution A , The titration rate of B was 1mL / min, and the perovskite single crystal PhABiI was obtained after static culture at 25°C for 10 days 3 , the physical picture of the obtained perovskite single crystal is shown in figure 2 shown.

[0038] Depend on figure 2 It can be seen that the size of the perovskite single crystal obtained by the method of the present invention is 1.1 cm, and the crystallinity is good, and the crystal quality is high.

[0039] Carry out X-ray diffraction to the obtained perovskite single crystal, the obtained result is as follows image 3 shown. Depend on image 3 It can be seen that there are only three obvious characteristic peaks in the XRD diffraction pattern, and the distribution of the three peaks has certain rules, which are obviously the ...

Embodiment 2

[0041] Add 2 cm of solution B (C 4 h 12 DMF solution of BrN (tetramethylammonium bromide), 1mol / L), 0.5cm of frozen layer of solution B (at a temperature of 10°C), 4cm of solution A (CuBr 2 (copper bromide) hydrobromic acid solution, 1mol / L), wherein the rate of instillation of solutions A and B is 0.2mL / min, after standing and culturing for 30 days under the condition of -20°C, a perovskite single crystal is obtained [ C 4 h 12 N] 2 CuBr 4 .

Embodiment 3

[0043] Add 2 cm of solution B (C 4 h 12 DMF solution of IN (tetramethylammonium iodide), 1mol / L), 0.1cm of frozen layer of solution B (temperature is 0°C), 1cm of solution A (CuI 2 (the DMF solution of copper iodide, 1mol / L), wherein the rate of addition of solution A, B is 2mL / min, obtain perovskite single crystal [C 4 h 12 N] 2 CuI 4 .

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Abstract

The invention provides a method for growing a perovskite single crystal by using a layer solution method, and belongs to the technical field of single crystals of perovskite materials. According to the present invention, by adding the frozen layer of a solution A or solution B between the solution A and the solution B, the mixing rate of the solution A layer and the solution B layer can be reduced, and the heat released by the reaction of the two solution layers can be offset by the frozen layer, such that the reaction between the two solution layers is gentle, the crystal nucleation and growth process is stable, and the perovskite single crystal obtained after the standing culture has characteristics of large size, high quality and flat surface; the method has advantages of simple operation, no requirement of precise growth equipment, low requirements on the experimental environment, low cost and wide universality for the single crystal preparation; and the results of the embodimentsshow that the perovskite single crystal obtained by the method can have a length of 0.5-2 cm, and has good crystallinity.

Description

technical field [0001] The invention relates to the technical field of perovskite material single crystals, in particular to a method for growing perovskite single crystals by layer solution method. Background technique [0002] Perovskite is a kind of ABX 3 materials with compound-like structures. In recent years, perovskite materials have attracted the attention of researchers in the fields of photoelectric conversion, electroluminescence, detectors, ferroelectricity, etc., and have a wide range of applications in life. However, it is worth noting that most of the perovskite materials studied and applied are bulk materials and thin film materials, and there are many grain boundaries and defects inside, which is not conducive to the study of the crystal structure of the material, and it also makes the material Reduced performance and shortened service life. [0003] In order to further improve the performance of perovskite materials, single crystal materials have attract...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B7/14C30B29/12
CPCC30B7/14C30B29/12
Inventor 钟向丽吴祎玮王金斌晏翀恺方苗苗李勃超李小磊郭科鑫单心怡
Owner XIANGTAN UNIV
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