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Ultrasonic-assisted electrochemical mechanical polishing processing device and method for SiC single crystal wafer

An ultrasonic-assisted, mechanical polishing technology, applied in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problem of low material removal rate, and achieve the effect of high removal efficiency, easy processing method and simple processing device.

Active Publication Date: 2019-09-03
XIAN UNIV OF TECH
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Problems solved by technology

[0003] The object of the present invention is to provide a device and method for ultrasonically assisted electrochemical mechanical polishing of a SiC single wafer, which solves the problem of low material removal rate (MRR) in the mechanical polishing process existing in the prior art

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  • Ultrasonic-assisted electrochemical mechanical polishing processing device and method for SiC single crystal wafer
  • Ultrasonic-assisted electrochemical mechanical polishing processing device and method for SiC single crystal wafer

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Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] An ultrasonic-assisted electrochemical mechanical polishing device for a SiC single wafer, such as figure 1 Shown, comprise glass tank 7, the bottom outer surface of glass tank 7 is provided with ultrasonic device 13, glass tank 7 inside is full of polishing liquid 8, is provided with the polishing disc 4 that can rotate along central axis in the polishing liquid 8, on the polishing disc 4 A polishing pad 3 is arranged on the surface, and a carrier plate 2 that can rotate along the central axis is connected to the top of the SiC single wafer 1 through conductive glue, and the rotation direction of the polishing plate 4 and the carrier plate 2 is opposite; The surface is provided with a stainless steel electrode 5, the stainless steel electrode 5 is connected to the negative pole of the pulse power supply 6, the positive pole of the pul...

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Abstract

The invention discloses an ultrasonic-assisted electrochemical mechanical polishing processing device and method for a SiC single crystal wafer. The SiC single crystal wafer and a stainless steel electrode are respectively connected with the anode and the cathode of a pulse power supply to form a closed loop in a polishing solution, and the wafer is used as the anode to perform anodic oxidation togenerate a layer of oxide film. In the method, the oxide layer is mechanically removed through a polishing pad and abrasive particles, the method is high in removing efficiency of the polishing material, the mechanical polishing cannot cause loss for the SiC single crystal base material, a lot of electric energy cannot be consumed, energy is saved and the environment is protected; and moreover, the processing device is simple, the processing method is easy to realize, and the processing device is suitable for large-scale popularization and use.

Description

technical field [0001] The invention belongs to the technical field of polishing processing of hard and brittle materials, and relates to an ultrasonic-assisted electrochemical mechanical polishing device and method for a SiC single wafer. Background technique [0002] Silicon carbide single crystal (SiC) has excellent properties such as wide bandgap, high thermal conductivity, and high saturation electron drift velocity, and is one of the most promising third-generation high-power, high-frequency, and high-temperature semiconductor materials. As the substrate of IC devices, the surface of SiC single crystal should reach the atomic level surface roughness without damage. However, the hardness of SiC single crystal is very high, second only to diamond and cubic boron nitride in nature. In addition, SiC single crystals hardly react with acid or alkaline solutions due to their chemical inertness. These characteristics make it difficult to obtain a surface with atomic-scale fl...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304H01L21/306
CPCH01L21/304H01L21/30625
Inventor 李淑娟麻高领尹新城张睿媛李志鹏潘盛湖赵智渊蒋百铃
Owner XIAN UNIV OF TECH
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