Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silicon-doped HfO2-based ferroelectric film

A ferroelectric thin film, silicon doping technology, applied in chemical instruments and methods, ion implantation plating, crystal growth, etc., can solve the problems of difficult preparation and limitation of thin film ferroelectricity, and achieve controllable layered structure and improved Film growth rate, effect of improving film purity

Inactive Publication Date: 2019-09-10
DONGGUAN UNIV OF TECH
View PDF5 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently due to the difficulty in finding suitable substrates to realize HfO 2 -based single crystal thin film epitaxy, resulting in the epitaxial growth of HfO 2 The preparation of -based single crystal thin films is difficult, which further limits the ability of HfO 2 -Studies on the ferroelectricity of base films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] A silicon-doped HfO 2 The preparation method of the base ferroelectric thin film, the crystal plane orientation is (100), yttrium-stabilized zirconia (YSZ) is selected as the substrate, and the self-made Si-doped HfO 2 As the target, Si-doped HfO was grown on the substrate surface by pulsed laser molecular beam epitaxy. 2 base film; then in-situ annealing was performed on the grown film under an oxygen atmosphere to obtain a stable Si-doped HfO 2 -base film, specifically comprises the following steps:

[0057] S1. The YSZ substrate is cleaned, polished and annealed, specifically including the following steps:

[0058] S11. At a temperature of 80°C, H 2 SO 4 :H 2 o 2 =3:1 solution for 5 minutes, then rinse with HF (10%) for 10 seconds;

[0059] S12. Undiluted HNO at a temperature of 80°C 3 Keep warm for 5 minutes, then rinse with HF (10%) for 10 seconds;

[0060] S13. At a temperature of 80°C, NH 4 OH:H 2 o 2 :H 2 O=1:1.5:4 solution was incubated for 5 minut...

Embodiment 2

[0080] Compared with Example 1, Example 2 differs in that the crystal plane orientation of the yttrium-stabilized zirconia (YSZ) substrate used is (111), and the others are the same as in Example 1. The prepared Si-doped HfO 2 The thickness of the base film was 20 nm.

Embodiment 3

[0082] Compared with Example 1, Example 3 differs in that the crystal plane orientation of the yttrium-stabilized zirconia (YSZ) substrate used is (110), and the others are the same as in Example 1. The prepared Si-doped HfO 2 The thickness of the base film was 20 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a silicon-doped HfO2-based ferroelectric film, and belongs to the technical field of material preparation. The preparation method comprises the steps that by taking yttrium-doped zirconia as a substrate, firstly the substrate is cleaned and annealed to fully remove internal stress and surface organic matters of the substrate; then, by taking self-made Si-doped HfO2 as a target, a Si-doped HfO2-based film grows on the surface of the substrate by a pulsed laser molecular beam epitaxy method in an ultra-vacuum state; and then the grown film is annealed in situ in an oxygen atmosphere to obtain the stable Si-doped HfO2-based film. By adopting the pulsed laser deposition epitaxy method in combination with a reflective high-energy electron diffractometer for real-time monitoring, and by optimizing oxygen pressure, laser energy, the substrate temperature and the annealing temperature, precise control on atomic-scale epitaxial growth of the filmis realized; the preparation method has the advantages of high purity and controllable layered structure; and ideas are provided for ferroelectric research on the Si-doped HfO2-based film.

Description

technical field [0001] The invention belongs to the technical field of material preparation, in particular to a silicon-doped HfO 2 Preparation method of ferroelectric thin film. Background technique [0002] Compared to Pb(Zr x Ti 1-x )O 3 (PZT) and SrBi 2 Ta 2 o 9 (SBT) and other traditional perovskite structure multiple oxide ferroelectric materials, HfO 2 -Based ferroelectric thin film has the following significant advantages: 1) Excellent compatibility with Si-based CMOS integration process technology; 2) Non-toxic, harmless, green and environmentally friendly, simple composition, and easy to control the process of uniform growth of thin film; 3) Remanent polarization The strength is equivalent to or even higher than that of PZT and SBT materials with nanometer thickness; 4) Although the coercive field strength is about an order of magnitude higher than that of PZT, the extremely thin physical film thickness (~10nm) makes the actual operating voltage of the devic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C14/28C23C14/02C23C14/08C23C14/58C30B23/02
CPCC23C14/02C23C14/021C23C14/08C23C14/28C23C14/5806C30B23/025
Inventor 李涛
Owner DONGGUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com