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Organic thin film transistor and preparation method thereof

A technology of organic thin film and transistor, which is applied in the field of organic thin film transistor and its preparation, can solve the problems of solvent pollution and poor performance of organic thin film transistor, and achieve the effect of improving performance and solving solvent pollution

Active Publication Date: 2019-09-13
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide an organic thin film transistor and a preparation method thereof, aiming at solving the problem of poor performance of the organic thin film transistor prepared by the existing solution method and easy occurrence of solvent pollution during the preparation process. question

Method used

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  • Organic thin film transistor and preparation method thereof
  • Organic thin film transistor and preparation method thereof
  • Organic thin film transistor and preparation method thereof

Examples

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Effect test

Embodiment 1

[0046] The polymerizable solvent α-methylstyrene is used as the solvent, and 2-(4-dodecylphenyl)[1]benzothiophene[3,2-b][1]benzothiophene is used as the organic semiconductor material. Form a 2mg / ml solution, dissolve for more than 4 hours, add 0.05mg / ml azobisisobutyronitrile as an initiator, take 20μl solution and drop-coat it on a heavily doped silicon substrate containing a 300nm silicon dioxide layer, and the silicon substrate is inclined 20°, using a 20W ultraviolet light source for 20 minutes to obtain an organic semiconductor film, and vacuum thermally evaporated gold as the source and drain electrodes.

[0047] The α-methylstyrene solvent volatilization during processing is 2 / Vs.

Embodiment 2

[0052] Using the polymerizable solvent 4-acetoxystyrene as the solvent, and 2,7-dioctyl[1]benzothieno[3,2-b]benzothiophene as the organic semiconductor material, a 2mg / ml solution was formulated, Dissolve for more than 4 hours, add 0.1mg / ml azobisisobutyronitrile as an initiator, take 20μl of the solution and drop-coat it on a heavily doped silicon substrate containing a 300nm silicon dioxide layer, and use the solution shearing method to form a film. The rate is 20 μm / s, and at the same time, a 50W ultraviolet light source is used for 30 minutes to obtain an organic semiconductor film, and vacuum thermally evaporated gold is used as the source and drain electrodes.

[0053] In this example, during the preparation of the organic semiconductor film, the volatilization of 4-acetoxystyrene solvent was less than 30%; the mobility of the obtained organic thin film transistor was 8.2 cm 2 / Vs. .

[0054] In summary, the method for preparing an organic thin film transistor provided...

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Abstract

The invention discloses an organic thin film transistor and a preparation method thereof. The method comprises the following steps of providing a substrate, wherein a gate electrode and an insulatinglayer are prepared on the substrate; mixing an organic semiconductor, a polymerizable solvent and an initiator, so as to form a mixed solution; and processing the mixed solution on the insulating layer, so that the polymerizable solvent in the mixed solution and the organic semiconductor form an organic semiconductor layer and a polymer layer which are vertically layered on the insulating layer, and preparing a composite thin film layer; and preparing a source electrode and a drain electrode on the composite thin film layer to prepare the organic thin film transistor. The organic semiconductoris subjected to solution processing by adopting the polymerizable solvent, the polymerization of the polymerizable solvent is realized in the film forming process, and a composite thin film composedof a polymer layer and an organic semiconductor layer is generated, so that the problem of solvent pollution in the solution processing process is solved, and the performance of the organic thin filmtransistor is improved.

Description

technical field [0001] The invention relates to the field of organic thin film transistors, in particular to an organic thin film transistor and a preparation method thereof. Background technique [0002] Organic thin-film transistors (Organic Thin-film Transistor, OTFT) have many advantages such as easy processing, low cost, light weight, flexibility, and rich material choices. The field has broad application prospects. Compared with traditional inorganic transistors, OTFT has the inherent advantage of low cost. The reason is not only that it has many choices of materials, but also can be mass-produced by solution processing techniques such as spin coating, spray coating, doctor blade coating, and screen printing. Although the performance of solution-processed OTFT devices has made great progress, the problem of solvent contamination during processing has attracted more and more attention. For example, although the method of using non-chlorinated and non-halogenated solve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40H01L51/05
CPCH10K71/15H10K71/12H10K10/462Y02E10/549
Inventor 孟鸿贺超贺耀武陈梦芸
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL