Ambient-temperature-independent silicon nitride micro-ring filter chip based on vertical slit structure

Abstract

The invention provides an ambient-temperature-independent silicon nitride micro-ring filter chip based on a vertical slit structure. The chip comprises a buffer layer plated on a silicon substrate and a core layer. The core layer is a vertical slit type micro-ring resonant cavity formed by clamping a silicon dioxide micro ring between two silicon nitride micro rings; and each of a silicon nitride micro-ring waveguide and a silicon dioxide micro-ring waveguide includes a disc waveguide and a straight waveguide. The core layer is coated by a negative-thermo-optical-coefficient outer cladding layer coated on the buffer layer. The ambient-temperature-independent silicon nitride micro-ring filter chip is characterized by the vertical slit structure; and the temperature-independent characteristic of filtering can be realized by combining the negative-thermo-optical-coefficient outer cladding layer.

Description

technical field [0001] The invention relates to a silicon nitride microring filter. Background technique [0002] In recent years, the rapid development of society has entered the era of informationization, so higher requirements are put forward for the data transmission volume and transmission speed. With the development of technology, the expansion of ultra-high-definition video formats, the increase of mobile data traffic, and the emergence of cloud-intensive data services [Prior Art 1: Kwack M J, Tanemura T, Higo A, et al. Opt. Express. 20 (27 ), 28734-41(2012)], which greatly promoted the development of society. However, the current processing capability of electronic chips has reached a technical bottleneck. As we all know, the "Moore's Law" guiding the development of microelectronics has basically failed, and the development of integrated circuit chips has become saturated. On the other hand, due to the development of big data, cloud computing, and the Internet of T...

AI Technical Summary

Problems solved by technology

The microring structure itself is very sensitive to the ambient temperature. The change of the ambient temperature will cause the change of the resonant wavelength, which will not only increase the crosstalk and loss between channels, but the excessive temperature drift may also lead to the inability to accurately separate and multiplex specific wavelengths.

At present, the commonly used methods to overcome temperature wavelength drift are mostly external mechanical devices to move the waveguide or additional metal temperature compensation. These methods are poor in integrity, complex in structure, and difficult to integrate on a large scale.

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