Process method for preparing acid corrosion wafer with high brightness at single side

Abstract

The invention provides a process method for preparing an acid corrosion wafer with high brightness at the single side, which comprises the steps of (1) carrying out shearing and grinding on the single side, namely, performing shearing and grinding on one surface of a two-sided grinding wafer by adopting a grinding wheel, wherein the grinding removal amount is 10-20[mu]m to obtain a single-sided grinding wafer; and (2) carrying out acid corrosion, namely, performing acid corrosion on the single-sided grinding wafer obtained in the step (1) by using an acid corrosion solution to obtain an acid corrosion wafer with high brightness at the single side. Compared with the traditional process route, the process method of the invention adds a procedure of single-sided shearing and grinding, the front and the back of the acid corrosion wafer are enabled to be different in brightness by single-sided shearing and grinding, the acid corrosion wafer with the single-side glossiness being greater than 360Gs, the reflectivity being greater than 98% and less roughness is prepared after acid corrosion, the use requirement is ensured, the polished wafer is replaced, and the cost is saved.

Description

technical field [0001] The invention belongs to the technical field of processing semiconductor material silicon single crystals and silicon wafers, and in particular relates to a process method for preparing silicon single crystal single-sided high-brightness corroded chips. Background technique [0002] At present, most of the high-end applications of silicon-based semiconductor materials are silicon polished wafers. The main steps of preparing polished wafers are: single crystal rod, cutting, rounding, slicing, chamfering, grinding, etching, polishing and cleaning, packaging, etc. Among them, the surface of the polished silicon wafer has high flatness and cleanliness, and its crystal lattice is complete, which can be applied in various high-tech industries and meet the needs of different types of semiconductor materials and devices. However, the polishing process has high technological requirements on the precision of the equipment, processing environment, polishing liqui...

AI Technical Summary

Problems solved by technology

However, the glossiness of the silicon single crystal etching sheet used in the field of thyristors can meet the needs of production automation when it reaches above 360GS (reflectivity greater than 98%). Relying on traditional grinding and etching processes, it can reach above 360Gs (reflectivity greater than 98%). The surface gloss is still very difficult, and the traditional process method can hardly achieve stable mass production

Moreover, in the field of thyristors, there are generally strict requirements only on the front side (working surface) of the silicon wafer, and there are generally no special requirements on the back side of the silicon wafer, but the traditional acid etching processing method is mostly double-sided etching

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