Low-temperature sintering piezoelectric ceramic material without sintering aid and preparation method thereof
A low-temperature sintering, piezoelectric ceramic technology, applied in the field of piezoelectric ceramic materials, can solve the problems of uneven material composition, inability to co-fire silver electrodes, performance degradation, etc., to achieve uniform grain size, easy mass production, structure dense effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] (1) According to the formula: x Bi(Zn 1 / 2 Ti 1 / 2 )O 3 – y OSo 3 -(1- x - y )PbTiO 3 ,in, x = 0.07, y = 0.32 stoichiometric ratio, weigh high-purity oxides: PbO (purity 99.9%), ZnO 2 (purity 99.99%), TiO 2 (purity 99.9%), Bi 2 o 3 (purity 99.99%), Sc 2 o 3 (purity 99.99%), the above-mentioned oxides are all produced by Aladdin Company. Then put the above-mentioned oxides into a ball mill jar, use absolute ethanol as a dispersant, mill the ball mill for 12 hours at a speed of 200 rpm, and put the mixed material into an oven to dry at 80°C.
[0030] (2) The powder obtained in step (1) is ground with a mortar and pressed into a cylindrical blank. Put the obtained blank on an alumina plate, put it into a muffle furnace, heat it at 800°C for 2 hours and pre-fire it, then cool it to room temperature with the furnace, put the pre-fired blank into a mortar and grind it, Pour into a ball mill jar and carry out secondary ball milling, the ball mill speed is 200 rp...
Embodiment 2
[0040] The difference between this embodiment and embodiment 1 is only:
[0041] (1) According to the formula: x Bi(Zn 1 / 2 Ti 1 / 2 )O 3 – y OSo 3 -(1- x - y )PbTiO 3 ,in, x = 0.09, y = 0.34 ratio.
[0042] (2) The sintering temperature is 750°C, and the temperature is kept for 2 hours. All the other contents are the same as those described in Example 1.
[0043] The sintering temperature of the piezoelectric material prepared in this example is 750°C, and the relative density is 97.76%, which indicates that the material of this component has been sintered into porcelain. Depend on figure 1 As shown in the microscopic image of scanning electron microscope, the grain size is uniform, with an average of about 2 ~ 3 μm, the distribution of pores is small, and the density is high. The X-ray diffraction (XRD) pattern of the material is as follows figure 2 As shown in b, it can be obtained that the obtained piezoelectric materials all have a single perovskite structure...
Embodiment 3
[0045] The difference between this embodiment and embodiment 1 is only:
[0046] (1) According to the formula: x Bi(Zn 1 / 2 Ti 1 / 2 )O 3 – y OSo 3 -(1- x - y )PbTiO 3 ,in, x = 0.09, y = 0.30 ratio.
[0047] (2) The sintering temperature is 800°C, and the temperature is kept for 2 hours. All the other contents are the same as those described in Example 1.
[0048] The sintering temperature of the piezoelectric material prepared in this example is 800°C, and the relative density is 95.70%, indicating that the material of this component has been sintered into porcelain. The X-ray diffraction (XRD) pattern of the material is as follows figure 2 As shown in c, the resulting ceramics can be obtained as a single perovskite structure without other impurity phases. Its dielectric spectrum is as image 3 As shown in c, the Curie temperature T c =445℃, relative permittivity ε r = 1247; the piezoelectric constant of the piezoelectric material obtained by testing the pres...
PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Curie temperature | aaaaa | aaaaa |
| Piezoelectric constant | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More