Preparation method of alumina medium-based microwave/radio frequency thin film capacitor

Abstract

The invention belongs to the technical field of capacitors, and particularly discloses a preparation method of an alumina medium-based microwave / radio frequency thin film capacitor. The method comprises the following steps: S1, growing alumina with the thickness of 25-100 nm on heavily doped silicon by atomic layer deposition through ozone, wherein a precursor is trimethyl aluminum, the growth temperature is 80-300 DEG C, and the ozone flow is 30-50 ml / min; S2, carrying out treatment by an annealing process, wherein the annealing process is divided into a heating stage, a heat preservation stage and a cooling stage; and S3, carrying out assembling to obtain the capacitor. The capacitor provided by the invention has a relatively high breakdown voltage, a relatively low leakage current and arelatively large dielectric constant (close to a theoretical value) and relatively low dielectric loss (less than or equal to 5%). The capacitor is simple in structure, and the production process isrelatively easy to realize.

Description

technical field [0001] The invention belongs to the technical field of capacitors, and in particular relates to a preparation method of a microwave / radio frequency film capacitor based on an alumina medium. Background technique [0002] The rapid development and wide application of modern microwave communication technology (mobile communication, satellite communication, military radar, global satellite positioning system (GPS), Bluetooth technology, wireless local area network, etc.) has promoted the research progress of microwave materials and their devices, making them capable of better performance and higher quality. With the development of microwave communication terminal equipment towards lightness, thinness, shortness, smallness and high frequency, the size of microwave dielectric ceramics is severely limited, and it is far from meeting the performance requirements of increasingly integrated and miniaturized electronic products. Seriously hinder the application of mic...

AI Technical Summary

Problems solved by technology

The scope of research mainly covers a type of porcelain thin film (small microwave loss, low dielectric coefficient) and a second type of porcelain thin film (very large dielectric coefficient, usually a ferroelectric material, large microwave loss, poor stability)

The second type of porcelain film is mainly a ferroelectric material. Although it has a large dielectric constant, its voltage stability is poor due to its dielectric adjustability, and the inherent dielectric loss of the ferroelectric film is large, so it is difficult to apply to general In microwave devices, unless used in tunable microwave devices

At the same time, there is extensive research on high-k gate dielectric materials used as Si microelectronics in China, but research on miniaturized microwave capacitor film dielectrics is still rare.

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