Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Hole transport layer and light emitting diode and preparation method thereof

A technology of hole transport layer and light-emitting diode, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as hole transport layer failure and hinder charge injection, and achieve suppression of exciton quenching effect, the effect of excellent hole transport performance

Inactive Publication Date: 2019-10-18
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oxygen plasma surface treatment can lead to failure of the hole-transport layer, while the intercalated interfacial layer is often insulating and hinders charge injection.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hole transport layer and light emitting diode and preparation method thereof
  • Hole transport layer and light emitting diode and preparation method thereof
  • Hole transport layer and light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0070] The present invention also provides a method for preparing the above light-emitting diode, comprising the following steps:

[0071] A) annealing is carried out after coating the carbon quantum dot solution on the surface of the pretreated conductive glass substrate to obtain a conductive glass substrate composited with a hole transport layer;

[0072] B) After coating the surface of the hole transport layer of the conductive glass substrate with the hole transport layer with a perovskite precursor solution, annealing is performed to prepare a perovskite layer on the surface of the hole transport layer;

[0073] C) sequentially evaporating an electron transport layer, a cathode modification layer and a metal electrode on the surface of the perovskite layer to obtain a light emitting diode.

[0074] The present invention first carries out pretreatment to conductive glass substrate, and concrete method is as follows:

[0075] The patterned ITO or FTO conductive glass was ...

Embodiment 1

[0084] Dissolve 20 mg of 2,3-diaminonaphthalene and 50 mg of citric acid in 15 mL of ethanol solution, and sonicate for 10 minutes to promote its dissolution; transfer the completely dissolved clear solution to a 25 mL polytetrafluoroethylene reaction vessel, and Heating at 160°C for 4 hours; after the reaction was completed, the reactor was naturally cooled to room temperature; after that, the carbon quantum dots were purified by silica gel column chromatography using an appropriate proportion of dichloromethane and methanol as the eluent; The purified carbon quantum dots were dispersed in o-dichlorobenzene solvent to obtain a carbon quantum dot solution with a concentration of 10 mg / mL.

[0085] see figure 2 , figure 2 Transmission electron microscope picture of the carbon quantum dots prepared in Example 1. The particle size of the carbon quantum dots is 1.5-10 nm.

Embodiment 2

[0087] The preparation method of the perovskite light-emitting diode adopts the following steps:

[0088] (1) The patterned ITO conductive glass was ultrasonically cleaned with detergent, tap water, pure water, acetone and isopropanol for 15 minutes, and then dried with nitrogen gas and placed in an oven for drying. The dried conductive glass Carry out UV-ozone treatment for 15 minutes;

[0089] (2) Transfer the UV-ozone-treated conductive glass to a nitrogen glove box, place it on a homogenizer, spin-coat the carbon quantum dot solution prepared in Example 1 at 3000rpm for 30s, and then anneal at 80°C for 10min , so that the carbon quantum dot hole transport layer prepared on the conductive glass has a thickness of 30nm;

[0090] (3) Place the annealed substrate on a homogenizer, spin-coat the perovskite precursor solution at 4000rpm, and then anneal at 80°C for 10min to obtain a perovskite light-emitting layer with a thickness of 70nm. The perovskite precursor solution is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Particle sizeaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention provides a hole transport layer which is prepared from carbon quantum dots. The carbon quantum dots are used as the hole transport layer of a perovskite light emitting diode, thehole transport layer has excellent hole transport performance and matched energy level, and the perovskite light emitting layer can be directly prepared on the hole transport layer without additionaloxygen plasma treatment or interface layer modification. The exciton quenching effect between the hole transport layer and the perovskite light emitting layer can also be suppressed effectively by the functional groups on the surface of the carbon quantum dots so that the highly efficient and stable perovskite light emitting diode can be prepared.

Description

technical field [0001] The invention belongs to the technical field of light emitting diodes, and in particular relates to a hole transport layer, a light emitting diode and a preparation method thereof. Background technique [0002] Perovskite material is a new type of luminescent material, which has the characteristics of high fluorescence quantum yield, continuously adjustable luminescence peak, pure luminescence color, low preparation cost and excellent solution processability. vast research boom. At present, the hole injection layer in perovskite light-emitting diodes generally uses acidic PEDOT:PSS, but the strong acidity and easy water absorption of PEDOT:PSS cause stability problems of the device. In addition, the obvious exciton quenching effect between PEDOT:PSS and perovskite light-emitting layer limits the further improvement of device performance. At present, the hole transport materials that replace PEDOT:PSS are generally high molecular polymer materials suc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/12H10K85/20H10K50/15
Inventor 谭占鳌王志斌孙文达王福芝
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com