Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic semiconductor material, preparation method and electroluminescent device

An organic semiconductor and light-emitting layer technology, applied in the fields of electroluminescent devices, preparation, and organic semiconductor materials, can solve the problems of poor electron transport properties of triphenylamine and fluoranthene, and achieve excellent fluorescence quantum efficiency and excellent hole transport properties. , Improve the effect of film forming

Inactive Publication Date: 2013-09-25
OCEANS KING LIGHTING SCI&TECH CO LTD +1
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both triphenylamine and fluoranthene have poor electron transport properties

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic semiconductor material, preparation method and electroluminescent device
  • Organic semiconductor material, preparation method and electroluminescent device
  • Organic semiconductor material, preparation method and electroluminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A kind of organic semiconductor material: 4-methoxy-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxytriphenylamine (named as DPFPOMOTPA in the present invention), such as formula ( Ia) as shown:

[0034]

[0035] Its preparation method comprises the following steps:

[0036] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-methoxy-4"-bromotriphenylamine,

[0037] B:

[0038] In a three-necked flask with nitrogen gas, add compound A: 4-methoxy-4′, 4″-dibromotriphenylamine (6.49g, 15mmol), vacuumize nitrogen gas three times, and then inject tetrahydrofuran (THF ) solvent, the ethanol bath was cooled to -78°C, then slowly added n-butyllithium n-BuLi (2.5M in hexane) (6mL, 15mmol) dropwise, stirred and reacted for half an hour after the dropwise addition, and then added trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, the...

Embodiment 2

[0066] A kind of organic semiconductor material: 4-tert-butyl-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxy triphenylamine (named DPFPOtBTPA in the present invention), such as formula ( I b) as shown:

[0067]

[0068] Its preparation method comprises the following steps:

[0069] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-tert-butyl-4"-bromotriphenylamine,

[0070] B:

[0071] Add compound A: 4-tert-butyl-4′,4″-dibromotriphenylamine (6.88g, 15mmol) into a three-necked flask with argon gas, evacuate the argon gas for three times, and inject diethyl ether with a syringe Solvent, ethanol bath to cool down to -78°C, then slowly add n-butyllithium n-BuLi (2.5M in hexane) (7.2mL, 18mmol) dropwise, stir and react for half an hour after the dropwise addition, then add trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, then f...

Embodiment 3

[0092] A kind of organic semiconductor material: 4-hexyloxy-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxytriphenylamine (named after DPFPOHOTPA in the present invention), such as formula ( Ic) as shown:

[0093]

[0094] Its preparation method comprises the following steps:

[0095] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-hexyloxy-4"-bromotriphenylamine,

[0096] B:

[0097] Add compound A: 4-hexyloxy-4′, 4″-dibromotriphenylamine (7.55g, 15mmol) to a three-necked flask with nitrogen gas, vacuumize and nitrogen gas three times, and inject isopropyl ether with a syringe Solvent, ethanol bath to cool down to -78°C, then slowly add n-butyllithium n-BuLi (2.5M in hexane) (7.2mL, 18mmol) dropwise, stir and react for half an hour after the dropwise addition, then add trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, then...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an organic semiconductor material, of which a chemical formula is shown by the following formula (I), wherein R is alkyl or alkoxy with 1-20 carbon atoms. The organic semiconductor material contains triphenylamine, fluoranthene and diphenyl phosphinyl groups, wherein the diphenyl phosphinyl groups have a good electronic transmission performance, and the organic semiconductor material can be used as a blue light main body material. The invention further provides a method for preparing the organic semiconductor material, and an electroluminescent device containing the organic semiconductor material.

Description

technical field [0001] The invention belongs to the field of photoelectric materials, and in particular relates to an organic semiconductor material, a preparation method and an electroluminescent device. Background technique [0002] In 1987, Tang and VanSlyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. For the first time, they used the vacuum evaporation technology to combine the aromatic diamine with hole transport property and the 8-hydroxyquinoline aluminum (Alq) with high fluorescence efficiency and electron transport property. 3 ) combined to prepare a double-layer organic electroluminescent device. Under the driving voltage of 10V, the device emits green light with a brightness of up to 1000cd / m 2 , the efficiency reaches 1.5lm / W, and the life span exceeds 1000 hours. This milestone work has made people see a bright prospect for the practical and commercialization of organic electroluminesce...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C07F9/53C09K11/06H01L51/54
Inventor 周明杰王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products