Organic semiconductor material, preparation method and electroluminescent device
An organic semiconductor and light-emitting layer technology, applied in the fields of electroluminescent devices, preparation, and organic semiconductor materials, can solve the problems of poor electron transport properties of triphenylamine and fluoranthene, and achieve excellent fluorescence quantum efficiency and excellent hole transport properties. , Improve the effect of film forming
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Embodiment 1
[0033] A kind of organic semiconductor material: 4-methoxy-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxytriphenylamine (named as DPFPOMOTPA in the present invention), such as formula ( Ia) as shown:
[0034]
[0035] Its preparation method comprises the following steps:
[0036] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-methoxy-4"-bromotriphenylamine,
[0037] B:
[0038] In a three-necked flask with nitrogen gas, add compound A: 4-methoxy-4′, 4″-dibromotriphenylamine (6.49g, 15mmol), vacuumize nitrogen gas three times, and then inject tetrahydrofuran (THF ) solvent, the ethanol bath was cooled to -78°C, then slowly added n-butyllithium n-BuLi (2.5M in hexane) (6mL, 15mmol) dropwise, stirred and reacted for half an hour after the dropwise addition, and then added trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, the...
Embodiment 2
[0066] A kind of organic semiconductor material: 4-tert-butyl-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxy triphenylamine (named DPFPOtBTPA in the present invention), such as formula ( I b) as shown:
[0067]
[0068] Its preparation method comprises the following steps:
[0069] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-tert-butyl-4"-bromotriphenylamine,
[0070] B:
[0071] Add compound A: 4-tert-butyl-4′,4″-dibromotriphenylamine (6.88g, 15mmol) into a three-necked flask with argon gas, evacuate the argon gas for three times, and inject diethyl ether with a syringe Solvent, ethanol bath to cool down to -78°C, then slowly add n-butyllithium n-BuLi (2.5M in hexane) (7.2mL, 18mmol) dropwise, stir and react for half an hour after the dropwise addition, then add trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, then f...
Embodiment 3
[0092] A kind of organic semiconductor material: 4-hexyloxy-4 '-(7,10-diphenylfluoranthenyl)-4 "-diphenylphosphinoxytriphenylamine (named after DPFPOHOTPA in the present invention), such as formula ( Ic) as shown:
[0093]
[0094] Its preparation method comprises the following steps:
[0095] (1) Preparation of compound B represented by the following structural formula: 4-trimethylsilylacetylene-4'-hexyloxy-4"-bromotriphenylamine,
[0096] B:
[0097] Add compound A: 4-hexyloxy-4′, 4″-dibromotriphenylamine (7.55g, 15mmol) to a three-necked flask with nitrogen gas, vacuumize and nitrogen gas three times, and inject isopropyl ether with a syringe Solvent, ethanol bath to cool down to -78°C, then slowly add n-butyllithium n-BuLi (2.5M in hexane) (7.2mL, 18mmol) dropwise, stir and react for half an hour after the dropwise addition, then add trimethylsilane Acetylene (1.76g, 18mmol), stirred for 1h, warmed up to room temperature, extracted the mixture with chloroform, then...
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