Optical proximity effect correction model and building method thereof, and forming method of mask plate

Abstract

The invention relates to an optical proximity effect correction model, a building method thereof and a forming method of a mask plate. The method comprises the steps of: providing a plurality of reference graphs, and performing threshold acquisition processing on the reference graphs, wherein the threshold acquisition processing method comprises the following steps: performing first simulation exposure processing by taking a reference graph as a mask to obtain reference light intensity distribution, acquiring a test mask plate according to the reference graph, and performing test exposure treatment by taking the test mask plate as a mask to obtain a test pattern, wherein the test pattern has a test size, and obtaining threshold information through the test pattern and the reference light intensity distribution, wherein the threshold information is used for obtaining a first correction pattern in the reference light intensity distribution, the first correction pattern has a first correction size, and the first correction size is equal to the test size; acquiring reference information corresponding to the reference graph; and establishing a corresponding relation model of the reference information and the threshold information. The optical proximity effect correction model established by the method has high precision.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an optical proximity effect correction model, a method for establishing the same, and a method for forming a mask plate. Background technique [0002] Photolithography technology is a crucial technology in semiconductor manufacturing technology, which can realize the transfer of patterns from the mask plate to the surface of silicon wafers to form semiconductor products that meet the design requirements. [0003] With the continuous shrinking of the design size, the design size is close to or smaller than the wavelength of light used in the lithography process, and the diffraction effect and interference effect of light become more and more obvious, resulting in the actual formation of the lithography pattern relative to the mask plate. The pattern is seriously distorted, and finally the actual pattern formed by photolithography on the silicon wafer becomes di...

AI Technical Summary

Problems solved by technology

The rule-based method needs to establish a correction rule database in advance. In actual processing, the correction data can be obtained only by searching the database to realize the correction of the mask pattern. Therefore, this method is fast in processing large-scale integrated circuit layouts. Strong; the model-based method needs to select an appropriate optical model in advance. In the actual processing, the optical model is used to simulate the process of lithography imaging to realize the correction of the mask pattern. Therefore, this method needs to consume more time and space, but The accuracy of correction results is higher

[0006] However, the accuracy of the optical proximity effect correction performed by the mathematical model formed by the existing technology is low and time-consuming

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