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A kind of binding method of ito rotating target

A rotating target and binding technology, applied in vacuum evaporation coating, coating, sputtering coating and other directions, can solve the problems affecting the use effect of the target material and the deformation of the back tube, so as to improve the bonding rate and shape Uniform, uniform wall thickness effect

Active Publication Date: 2020-07-03
东莞市欧莱溅射靶材有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The use of ITO thin films is becoming more and more widespread, and the main raw material of the coating process needs to use ITO targets. According to the physical properties of the targets, it is necessary to bind the targets and the back tube during actual use, and the binding effect often affects The effect of using the target
Especially for long rotating targets, the properties of the poured metal layer evenly affect the final binding welding rate. The conventional binding method is easy to deform the back tube and the yield rate is low. In order to solve this problem, an easy-to-operate and Bonding method with high bond welding rate

Method used

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  • A kind of binding method of ito rotating target

Examples

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Effect test

preparation example Construction

[0041] For the preparation of a rotating target of any length, the effect of binding solder formed between the ITO target tube 9 and the back tube 4 affects the final bonding welding rate. In order to improve the final target sputtering coating effect, the ITO target tube 9 and the back tube The bonding solder between 4 needs to have the same size everywhere and uniform crystallization everywhere. In order to achieve this technical effect, this technical solution uses a segmented bonding pouring method, which is beneficial to control the crystallization of each segment of bonding solder. Through the positioning of the graphite ring 3 on the tooling chassis 2, the positioning of the back tube 4 on the graphite ring 3, the positioning of the sealing ring 5 and the graphite ring 3 on the ITO target tube 9, the concentricity of the back tube 4 and the ITO target tube 9 is maintained, then The pouring space 6 between the back tube 4 and the ITO target tube 9 is uniform in shape, an...

Embodiment 1

[0047] A kind of ITO rotating target binding method is characterized in that comprising the steps:

[0048] 1) Put the tooling chassis 2 on the inner heating rod 1 of the binding device, continue to put the graphite ring 3 on the inner heating rod 1, and put the graphite ring 3 into the tooling chassis 2;

[0049] 2) Put the back tube 4 on the inner heating rod 1, the back tube 4 is positioned on the graphite ring 3, the inner heating rod 1 is heated, and the temperature of the back tube is kept at 170°C;

[0050] 3) Insert a pure copper sealing ring 5 on the back tube 4, the section wall thickness of the sealing ring 5 is set to 0.5 mm according to the binding gap, and the ITO target tube 9 covered with a heating cloth bag is inserted into the back tube 4. Tube 4, the heating cloth bag is kept in a heated state, and a heating cloth bag with a heat conversion efficiency of 90% is selected. The temperature of the heating cloth bag is 189° C., and the whole process is kept warm....

Embodiment 2

[0056] A kind of ITO rotating target binding method is characterized in that comprising the steps:

[0057] 1) Put the tooling chassis 2 on the inner heating rod 1 of the binding device, continue to put the graphite ring 3 on the inner heating rod 1, and put the graphite ring 3 into the tooling chassis 2;

[0058] 2) Insert a back tube 4 on the inner heating rod 1, the back tube 4 is positioned on the graphite ring 3, the inner heating rod 1 is heated, and the temperature of the back tube is kept at 200°C;

[0059] 3) Put a pure copper sealing ring 5 on the back tube 4, the section wall thickness of the sealing ring 5 is set to 1 mm according to the binding gap, and put the ITO target tube 9 covered with heating cloth into the back tube 4. Tube 4, the heating cloth bag is kept in the heating state, and the heating cloth bag with a heat conversion rate of 80% is selected, the temperature of the heating cloth bag is controlled at 250°C, and the whole process is kept warm. The IT...

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Abstract

The invention discloses an ITO rotating target binding method. The ITO rotating target binding method comprises the steps of positioning of back pipes, positioning of ITO target pipes on the back pipes, maintenance of the concentricity with the back pipes, binding of solders through casting in casting space between the back pipes and the ITO target pipes through combnation with a positioning effect of sealing rings, completion of binding of single-section ITO rotating targets by control of the heating temperature through combination between inner heating rods in middles of the back pipes and heating cloth bags wrapped at the externals of the ITO target pipes, and realization of the production of whole targets through seal positioning repeated casting on the back pipes by the sealing rings.The ITO rotating target binding method is simple and easy to control the whole production process, and is high in product binding welding rate.

Description

technical field [0001] The invention relates to the technical field of target material processing, in particular to an ITO rotating target binding method. Background technique [0002] ITO is an N-type oxide semiconductor-indium tin oxide. As a nano-indium tin metal oxide, it has good conductivity and transparency, and can cut off harmful electron radiation, ultraviolet rays and far infrared rays that are harmful to the human body. Therefore, indium tin oxide is usually sprayed on glass, plastic and electronic display screens, used as a transparent conductive film, and at the same time reduces harmful electron radiation and ultraviolet and infrared radiation. The use of ITO thin films is becoming more and more widespread, and the main raw material of the coating process needs to use ITO targets. According to the physical properties of the targets, it is necessary to bind the targets and the back tube during actual use, and the binding effect often affects The effect of usin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22D27/04B22D19/04
CPCB22D19/04B22D27/04C23C14/3407
Inventor 陈明恒
Owner 东莞市欧莱溅射靶材有限公司
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