Unlock instant, AI-driven research and patent intelligence for your innovation.

Saturable absorber based on non-stoichiometric transition metal oxide film and its preparation method

A non-stoichiometric, saturable absorption technology, applied in the field of saturable absorber and its preparation, can solve the problems of low laser damage threshold, affecting laser pulse output performance and service life, limited working band, etc. The effect of manufacturing cost

Active Publication Date: 2020-08-18
ZHEJIANG UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the stability of various saturable absorbers based on low-dimensional materials reported in recent years has not been ideal, which greatly affects the pulse output performance and service life of lasers.
Therefore, although various low-dimensional material systems can easily realize Q-switched or mode-locked pulse output, and the working band covers the visible to mid-infrared region, the pulse performance obtained by these saturable absorbers is limited by the pulse energy and The stability and other indicators are not ideal, and the laser damage threshold is low. These factors are still the main bottlenecks for its industrialization.
At present, the commercial saturable absorber is monopolized by SESAM developed by Swiss Batop company. This kind of saturable absorber is based on semiconductor thin film materials, mainly composed of III-V semiconductors, and the preparation process depends on molecular beam epitaxy technology. Equipment requirements High, high cost, and on the other hand, the working band of this kind of saturable absorber is limited, it is difficult to realize wide-band light modulation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Saturable absorber based on non-stoichiometric transition metal oxide film and its preparation method
  • Saturable absorber based on non-stoichiometric transition metal oxide film and its preparation method
  • Saturable absorber based on non-stoichiometric transition metal oxide film and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment prepares based on non-stoichiometric TiO 2-x The permeable saturable absorber of thin film is used in 1.5 micron wave band fiber pulse laser.

[0031] (1) Take a quartz glass substrate with a thickness of 0.5 mm and a length and width of 20 mm, and grow a layer of TiO with a thickness of 50 nm by magnetron sputtering 2 film.

[0032] (2) heat-treat the film obtained in step (1) in a hydrogen atmosphere for 10 hours at a temperature of 800°C to obtain TiO 2-x film.

[0033] (3) grow a layer of Al on the surface of the film obtained in step (2) by magnetron sputtering 2 o 3 , with a thickness of 20nm, the Al 2 o 3 It only plays a protective role, and does not have anti-reflection and anti-reflection effects.

[0034] Based on TiO 2-x The saturable absorber shows saturable absorption in the 1.5-3.0 micron range, with a modulation depth of 2.5% in the 1.5 micron band.

[0035] figure 1 and figure 2 Z-scan curve, transmittance and incident laser p...

Embodiment 2

[0038] This embodiment prepares based on non-stoichiometric TiO 2-x The reflective saturable absorber of thin film is used in the solid-state laser in the 1.0 micron band to realize the Q-switched pulse output.

[0039] (1) Select a sapphire (Al 2 o 3 ) substrate, a layer of TiO was first grown on the substrate material by pulsed laser deposition (PLD) technology 2 / SiO 2 High reflection film (thickness 500-700nm), and then continue to grow TiO on it 2 film with a thickness of 20nm.

[0040](2) Heat the film obtained in step (1) in a reducing atmosphere. The heat treatment time is 10 hours, the temperature is 800 ° C, and the atmosphere is pure hydrogen (1MPa), thereby obtaining TiO 2-x film.

[0041] (3) coat a layer of TiO on the surface of the film obtained in step (2) by magnetron sputtering 2 / SiO 2 The high reflective film, the finally obtained saturable absorber has a reflectivity of more than 98% in the 1 micron band, and its modulation depth is 0.7%.

[0042]...

Embodiment 3

[0044] In this example, laser pulse deposition technology is used to prepare VO-based 2-x Thin film permeable saturable absorber, the working band covers 1.5-5.0 microns.

[0045] (1) A silicon wafer with a thickness of 1 mm and a length and width of 20 mm was selected as the substrate, and the VO 2-x Thin films were deposited onto the substrate surface with a thickness of 50 nm.

[0046] (2) deposit a layer of MgF on the film surface obtained in step (1) by magnetron sputtering technology then 2 layer to achieve an anti-reflection effect. Tests show that the saturable absorber exhibits saturable absorption in the range of 1.5-5.0 microns, and the modulation depth of the 3.6 micron band is 15%.

[0047] Application: Based on Er-doped ZBLAN fiber, the thin film prepared in step (2) is used as a saturable absorber, and the Q-switched pulse output in the 3.6 micron band is obtained, and the pulse width is 3.0 microseconds.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
optical damage thresholdaaaaaaaaaa
thicknessaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to View More

Abstract

The invention discloses a saturable absorber based on a non-stoichiometric transition metal oxide film and a preparation method thereof. The saturable absorber mainly comprises a substrate, a non-stoichiometric transition metal oxide layer and a surface layer; the saturable absorber includes both a transmissive type and a reflective type, wherein the substrate comprises an inorganic transparent substrate such as sapphire, quartz glass and the like and a coating film thereon; the transition metal oxide comprises TiO2-x, VO2-x, ZrO2-x, Nb2O5-x and the like; the operating band can cover a visiblemid-infrared band due to the different materials used. The invention provides a brand-new saturable absorber for various pulse lasers and a preparation method thereof, the preparation method is simple, low in cost, high in laser damage threshold value and the like, can be widely used for various lasers such as solid lasers, optical fiber lasers, semiconductor lasers and the like, and is used forgenerating the shortest laser pulse which can reach hundreds of femtoseconds.

Description

technical field [0001] The invention belongs to the fields of nonlinear optical thin film materials and devices, laser materials, etc., and specifically relates to a saturable absorber based on a non-stoichiometric transition metal oxide thin film and a preparation method thereof. Background technique [0002] Pulsed lasers are widely used in laser manufacturing, medical treatment, and precision spectroscopy. Pulsed lasers can be generated by active and passive modulation, mainly mode-locked and Q-modulated. energy. Active modulation technology is currently mainly realized by introducing an acousto-optic modulator or an electro-optic modulator, while passive modulation includes a Kerr lens and a saturable absorber. At present, introducing a saturable absorber into the laser resonator to achieve pulse output through passive modulation is considered to be the most effective and economical pulse laser generation method. [0003] Only six years after the invention of the firs...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S3/11C23C14/58C23C14/35C23C14/28C23C14/24C23C14/18C23C14/16C23C14/08C23C14/06
CPCC23C14/0694C23C14/08C23C14/081C23C14/083C23C14/165C23C14/18C23C14/24C23C14/28C23C14/35C23C14/5806H01S3/1115
Inventor 张多多刘小峰邱建荣
Owner ZHEJIANG UNIV