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Zone melting-directional solidification furnace and semiconductor thermoelectric material synthesis method

A technology of directional solidification furnace and thermoelectric materials, which is applied in self-regional melting method, manufacturing/processing of thermoelectric devices, polycrystalline material growth, etc., can solve the problems of difficult realization of high energy density heat source, large temperature difference, low efficiency, etc., to achieve Easy to query and call, wide range of performance adjustment, and simple preparation process

Active Publication Date: 2019-11-05
江阴市赛贝克半导体科技有限公司
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Problems solved by technology

[0004] In order to solve the problems of low efficiency, large temperature difference, and high energy density heat source in the prior art, the present invention provides a zone melting-directional solidification furnace and a synthesis method for semiconductor thermoelectric materials, which can be synthesized at 350K Bismuth telluride-based rod-shaped thermoelectric material inlaid with nano-grains with a ZT value of 1.7 in the -500K temperature zone, the technical scheme is as follows:

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  • Zone melting-directional solidification furnace and semiconductor thermoelectric material synthesis method
  • Zone melting-directional solidification furnace and semiconductor thermoelectric material synthesis method
  • Zone melting-directional solidification furnace and semiconductor thermoelectric material synthesis method

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specific Embodiment 1

[0051] The synthesis method of bismuth telluride-based thermoelectric material inlaid with N-type nano crystal grains comprises the following steps:

[0052] (1) Place the N bismuth telluride-based thermoelectric material sintered by the fusion mixing method in a vacuum-tight quartz tube in a zone melting-directional solidification furnace, move the columnar heating ring to the bottom of the quartz tube, and set the heating temperature to 1073K;

[0053] (2) After the temperature reaches 1073K, stabilize for 30 minutes, start the frequency conversion vibrator, and set the frequency to 150Hz;

[0054] (3) Set the lifting speed of the heating body to 0.15 mm / min, start the heating body lifting device, and slowly lift the heating body;

[0055] (4) When the top material in the quartz tube is solidified through zone melting, stop the heating body lifting device;

[0056] (5) Adjust the set temperature to 673K. After stabilization, set the descending speed of the heating body to 4...

specific Embodiment 2

[0059] The synthesis method of bismuth telluride-based thermoelectric material inlaid with P-type nano crystal grains comprises the following steps:

[0060] (1) Place the P bismuth telluride-based thermoelectric material sintered by the fusion mixing method in the vacuum-tight quartz tube in a zone melting-directional solidification furnace, move the columnar heating ring to the bottom of the quartz tube, and set the heating temperature to 973K;

[0061] (2) After the temperature reaches 973K, stabilize for 30 minutes, start the frequency conversion vibrator, and set the frequency to 180Hz;

[0062] (3) Set the lifting speed of the heating body to 0.35 mm / min, start the heating body lifting device, and slowly lift the heating body;

[0063] (4) When the top material in the quartz tube is solidified through zone melting, stop the heating body lifting device;

[0064] (5) Adjust the set temperature to 623K. After stabilization, set the heating body to drop at a speed of 3.5 mm...

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Abstract

The invention discloses a zone melting-directional solidification furnace and a semiconductor thermoelectric material synthesis method. The synthesis method comprises: carrying out zone melting-directional solidification vertical zone melting method; starting a heating body to heat a material to achieve a set temperature; starting a frequency conversion vibrator to modulate melt mass transfer andheat transfer; adjusting the moving speed of a heating body lifting device, and adjusting the temperature gradient; and carrying out annealing treatment. According to the present invention, by using the zone melting and directional solidification combined crystal growth method, the nucleation and growth process of the crystal is controlled through the coupling modulation of the three parameters such as the frequency conversion vibration frequency, the heating body vertical upward moving speed and the temperature, such that the nano-grain-incorporated bismuth telluride-based rod-like thermoelectric material with a ZT value of 1.7 at a temperature region range of 350-500 K; and the synthesized thermoelectric material can greatly promote the performances of semiconductor thermoelectric devices, and can be widely used in the fields of efficient waste heat recovery, active point temperature management and the like.

Description

technical field [0001] The invention relates to the field of material synthesis, in particular to a zone melting-directional solidification furnace and a synthesis method of semiconductor thermoelectric materials. Background technique [0002] Thermoelectric (TE) phenomenon is also called thermoelectric phenomenon. In 1822, Thomas Seebeck discovered the thermoelectric potential effect (the principle of TE material power generation); in 1834, Jean Peltier discovered the cooling effect at the junction of two different material conductors in the current loop (the principle of TE material refrigeration). Some good semiconductor TE materials were discovered in the 1950s. Usually the material with ZT≥0.5 is called TE material. The larger the ZT, the higher the efficiency of the TE device. In order to overcome the obstacle of lack of types of TE materials with high ZT value, people turn to the structural design of natural TE materials and the development of artificial syntheti...

Claims

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Application Information

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IPC IPC(8): C30B13/28C30B29/46H01L35/34
CPCC30B13/28C30B29/46H10N10/01
Inventor 徐岭刘宏章于道
Owner 江阴市赛贝克半导体科技有限公司
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