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Oxide thermoelectric material BiCuSeO single crystal and preparation method thereof

A single crystal and crystal growth technology, applied in the field of high-quality oxide thermoelectric material BiCuSeO single crystal and its growth, can solve the problems of low ZT value and low conductivity, and achieve the effects of easy operation, high crystal purity and strong operability

Active Publication Date: 2019-11-05
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the intrinsic conductivity of the BuCuSeO oxide system is very low, which also leads to its ZT value below 1.

Method used

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  • Oxide thermoelectric material BiCuSeO single crystal and preparation method thereof
  • Oxide thermoelectric material BiCuSeO single crystal and preparation method thereof
  • Oxide thermoelectric material BiCuSeO single crystal and preparation method thereof

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preparation example Construction

[0036] The preparation method of the present invention will be further described in detail in conjunction with specific examples below. It should be understood that the following examples are only for illustrating and explaining the present invention, and should not be construed as limiting the protection scope of the present invention. All technologies realized based on the above contents of the present invention are covered within the scope of protection intended by the present invention.

[0037] The experimental methods used in the following examples are conventional methods unless otherwise specified; the reagents and materials used in the following examples can be obtained from commercial sources unless otherwise specified.

[0038] In the experiment, high-purity Bi 2 o 3 , Bi, Cu and Se powders as raw materials, the used transport agent I 2 and Br 2 They are also high-purity reagents, and the quartz tubes for growing crystals are made of high-purity quartz.

Embodiment 1

[0039] Embodiment 1, transport agent is I 2 Growth of BiCuSeO crystals using BiCuSeO powder as raw material under conditions

[0040] Weigh 0.01mol of Bi 2 o 3 powder (4.6595g), 0.01mol of Bi powder (2.0898g), 0.03mol of Cu powder (1.9063g), and 0.03mol of Se powder (2.3688g), mix uniformly and pack into a prepared quartz tube, The mechanical pump and the molecular pump are used to seal the vacuum, and the high-temperature solid-state sintering reaction is carried out at 700 ° C for 5 days to prepare the BiCuSeO polycrystalline powder as the growth raw material. Then weigh about 1.2g of BiCuSeO polycrystalline powder and about 200mg of transport agent I 2 , Grind and mix the two evenly and put them into a prepared quartz tube (length 10cm, diameter 2cm). After the quartz tube is sealed, it is placed in a tube furnace with two temperature zones, and the growth temperature program is set at 500°C (growth end) to 600°C (raw material end). After a 10-day growth cycle, natural ...

Embodiment 2

[0042] Embodiment 2, transport agent is I 2 Growth of BiCuSeO crystals using BiCuSeO powder as raw material under conditions

[0043] Weigh 0.01mol of Bi 2 o 3 powder (4.6595g), 0.01mol of Bi powder (2.0898g), 0.03mol of Cu powder (1.9063g), and 0.03mol of Se powder (2.3688g), mix uniformly and pack into a prepared quartz tube, The mechanical pump and the molecular pump are used to seal the vacuum, and the BiCuSeO powder is prepared by performing a high-temperature solid-state sintering reaction at 700 ° C for 5 days as a growth raw material. Then weigh about 1.2g of BiCuSeO powder and about 200mg of transport agent I 2 , Grind and mix the two evenly and put them into a prepared quartz tube (length 10cm, diameter 2cm). After the quartz tube is sealed, it is placed in a tube furnace with two temperature zones, and the growth temperature program is set at 600°C (growth end) to 700°C (raw material end). After a 10-day growth cycle, natural cooling can obtain millimeter-scale ...

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Abstract

The invention relates to an oxide thermoelectric material BiCuSeO single crystal and a preparation method thereof. The BiCuSeO single crystal gas phase transport growth method has the advantages of simple device and easy operation. A prepared BiCuSeO single crystal material has a high crystal mass, the BiCuSeO single crystal has the size of millimeter and an area of square millimeter, and the single crystal material provides an ideal system to elucidate intrinsic physical properties of the material. The great significance to the research on how to effectively improve thermoelectric propertiesof a BiCuSeO-based thermoelectric material so as to develop relevant thermoelectric devices is provided. The BiCuSeO single crystal is an oxide thermoelectric material and can be used as an ideal high-temperature thermoelectric material to develop the relevant thermoelectric devices. A crystal grown by the gas phase transport method has the advantages of high purity, high quality, low cost and high operability.

Description

technical field [0001] The invention belongs to the technical field of new energy materials and crystal growth, and in particular relates to a high-quality oxide thermoelectric material BiCuSeO single crystal and a growth method thereof. Background technique [0002] Since the 20th century, with the rapid development of industry, the energy crisis and environmental pollution have been accompanied by it. Therefore, energy technologies that can protect the environment and save energy have become the focus of people's research. According to the statistics of the U.S. Department of Energy, in 2002, the waste heat discharged into the environment in the United States accounted for more than 55% of the total energy, while my country also discharges about 1013 kilowatts of industrial waste heat every year. The discharge of these waste heat has caused a serious waste of energy on the one hand, and also caused great damage to the environment on the other hand. Therefore, the reuse of...

Claims

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Application Information

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IPC IPC(8): C30B28/02C30B25/00C30B29/22C30B29/64
CPCC30B28/02C30B25/00C30B29/22C30B29/64
Inventor 吕洋洋陈思思林大钧陈延彬姚淑华周健陈延峰
Owner NANJING UNIV
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