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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, organic semiconductor devices, electric solid-state devices, etc., can solve the problems of poor stability of quantum dot light-emitting diodes, reduce non-radiative transitions, and increase device efficiency , the effect of mature technology

Active Publication Date: 2021-06-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of poor stability of the existing quantum dot light-emitting diode

Method used

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preparation example Construction

[0031] And, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, which is characterized in that it includes the following steps:

[0032] S01. Provide a cathode;

[0033] S02. Prepare a first functional layer on the cathode, the first functional layer is an electron transport layer of a silicon-doped zinc oxide material;

[0034] S03. sequentially preparing a quantum dot light-emitting layer on the surface of the electron transport layer;

[0035] S04. Prepare an anode on the quantum dot light-emitting layer.

[0036] The preparation method of the quantum dot light-emitting diode provided in the embodiment of the present invention only needs to prepare an electron transport layer of silicon-doped zinc oxide material on the cathode, and then sequentially prepare the quantum dot light-emitting diode and the anode. The process of the method is relatively mature, simple and controllable, and is conducive to realizing larg...

Embodiment 1

[0046] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0047] S11. Place the patterned ITO substrate in acetone, lotion, deionized water and isopropanol in sequence for ultrasonic cleaning, and each step of ultrasonic cleaning needs to last for about 15 minutes. After the ultrasound is completed, place the ITO in a clean oven to dry for later use.

[0048] S12. After the ITO substrate is dried, deposit a layer of Zn on it by sputtering m Si n O electron transport layer.

[0049] S13. After the upper sheet is cooled to room temperature, deposit QDs on it. The thickness of this layer is 20-40nm without heating. Afterwards, the hole transport layer TFB is deposited to a thickness of 40 nm. After the deposition of this step is completed, place the sheet on a heating platform at 100° C. for 30 minutes to remove residual solvent. Finally, place the sheet with each functional layer deposited in the evaporation chamber and thermally ev...

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Abstract

The invention provides a quantum dot light-emitting diode, comprising an anode and a cathode arranged oppositely, and a quantum dot light-emitting layer is arranged between the anode and the cathode, and a quantum dot light-emitting layer is arranged between the cathode and the quantum dot light-emitting layer There is a first functional layer, and the first functional layer is an electron transport layer, and the material of the electron transport layer is silicon-doped zinc oxide.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QD-LEDs) with quantum dots as the light-emitting layer are a promising next-generation display and solid-state lighting sources. Quantum dot light-emitting diodes (QLEDs) have attracted extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/15H10K2102/00H10K71/00
Inventor 刘佳曹蔚然
Owner TCL CORPORATION