Method for improving photoelectric performance of perovskite

A technology of photoelectric performance and perovskite, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of difficult large-scale industrial production, difficult to control the thickness of two-dimensional perovskite, affecting device performance, etc., to improve quality control , convenient for large-scale industrial production, and the effect of high fault tolerance

Inactive Publication Date: 2019-11-08
SHANGHAI JIAO TONG UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the processing methods currently used, including spin coating, hot-casting, etc., are difficult to adapt to large-scale industrial production, and the ammonium salts used are usually phenethylamine iodine or butylamine iodine with less steric hindrance, resulting in the formation of The thickness of the 2D perovskite is difficult to control, which ultimately affects the device performance

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  • Method for improving photoelectric performance of perovskite
  • Method for improving photoelectric performance of perovskite
  • Method for improving photoelectric performance of perovskite

Examples

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Embodiment 1

[0052] This embodiment relates to a kind of methylamine lead iodine (MAPbI 3 ) perovskite thin film is immersed in the method for forming two-dimensional perovskite passivation layer in the isopropanol solution of tetrabutylammonium iodide (TBAI) of 10mg / mL, described method comprises the steps:

[0053] 1) Dissolve 200mg tetrabutylammonium iodide in 20mL isopropanol to obtain solution A;

[0054] 2) methylamine lead iodide (MAPbI 3 ) The perovskite film is soaked in solution A for 5s;

[0055] 3) Remove isopropanol remaining on the surface of the film with an airflow, and anneal at 100° C. for 3 minutes.

[0056] figure 1 Be the methylamine lead iodine (MAPbI) after the treatment of embodiment 1 3 ) X-ray diffraction spectrum of perovskite film, can find out that the MAPbI that embodiment 1 obtains therefrom 3 It maintains its original crystal structure, and the diffraction peak of two-dimensional perovskite appears at 7.2°; figure 2 Be the methylamine lead iodine (MAP...

Embodiment 2

[0058] The method of this embodiment is the same as in Example 1, except that the quaternary ammonium salt used in step 1) is benzyltrimethylammonium iodide, and the quality is 40 mg, and the soaking time in step 2) is 30 min. Figure 4 For the X-ray diffraction picture that embodiment 2 obtains, it can be seen that the MAPbI that embodiment 2 obtains 3 It maintains its original crystal structure, and the diffraction peak of 2D perovskite appears at 10.2°.

Embodiment 3

[0060] This embodiment relates to a kind of methylamine lead iodine (MAPbI 3 ) perovskite thin film is immersed in the method for forming two-dimensional perovskite passivation layer in the isopropanol solution of phenyltrimethylammonium iodide (PTAI) of 0.5mg / mL, described method comprises the steps:

[0061] 1) Dissolve 10mg of phenyltrimethylammonium iodide in 20mL of isopropanol to obtain solution A;

[0062] 2) methylamine lead iodide (MAPbI 3 ) Soak the perovskite film in solution A for 1h;

[0063] 3) Remove isopropanol remaining on the surface of the film with an airflow, and anneal at 100° C. for 3 minutes.

[0064] Figure 5 Be the methylamine lead iodine (MAPbI) after the processing of embodiment 3 3 ) X-ray diffraction spectrum of perovskite film, can find out that the MAPbI that embodiment 3 obtains therefrom 3 It maintains its original crystal structure, and the diffraction peak of two-dimensional perovskite appears at 7.1°; Figure 6 Be the methylamine lea...

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Abstract

The invention provides a method for improving the photoelectric performance of perovskite. The method comprises the following steps of: S1, dissolving a certain amount of quaternary ammonium salt in asolvent to obtain a solution A; S2, immersing a perovskite film in the solution A for a certain period of time; and S3, removing the residual solvent on the surface of the soaked perovskite film by adopting air flow, and performing annealing. According to the method for improving the photoelectric performance of perovskite, the perovskite film obtained by the method of the invention is compact inthe surface and good in stability, and the device prepared based on the processed film shows the excellent photoelectric performance. The method is convenient to operate, and is suitable for large-scale production in factories.

Description

technical field [0001] The invention relates to a method for improving the photoelectric performance of perovskite, which is a method for improving the photoelectric performance of perovskite film through the steric hindrance of chemical molecules, specifically, immersing the prepared perovskite film into quaternary ammonium salt In the solution, the steric hindrance of the quaternary ammonium salt is used to prevent the migration of cations in the perovskite, so that only a thin passivation layer can be formed on the surface of the perovskite film, which ultimately improves the stability and photoelectricity of the perovskite film. performance. Background technique [0002] Perovskite materials are widely used in optoelectronic fields such as solar cells, LEDs, and X-ray detectors due to their high light absorption coefficient, long carrier diffusion length, and high defect tolerance. However, the inherent instability of three-dimensional perovskite, such as the disadvanta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/44
CPCH10K71/40H10K85/00H10K30/88Y02E10/549Y02P70/50
Inventor 赵一新钱旭芳王兴涛王勇张太阳刘晓敏武敏
Owner SHANGHAI JIAO TONG UNIV
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