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Tungsten-plated diamond particle, tungsten plating method, application of tungsten-plated diamond particle used as copper-based reinforced phase, and obtained diamond/copper composite material

A diamond particle and reinforcing phase technology, applied in metal material coating process, sputtering plating, ion implantation plating, etc., can solve the problems of high interface thermal resistance, poor bonding between diamond particles and matrix, and reduce the interface heat. resistance, good surface bonding, and the effect of increasing surface energy

Active Publication Date: 2019-11-12
XI AN JIAOTONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of poor bonding between diamond particles and the matrix and high interface thermal resistance, and provide a tungsten-plated diamond particle, a tungsten plating method, its application as a copper-based reinforcing phase, and the obtained diamond / copper composite material

Method used

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  • Tungsten-plated diamond particle, tungsten plating method, application of tungsten-plated diamond particle used as copper-based reinforced phase, and obtained diamond/copper composite material
  • Tungsten-plated diamond particle, tungsten plating method, application of tungsten-plated diamond particle used as copper-based reinforced phase, and obtained diamond/copper composite material
  • Tungsten-plated diamond particle, tungsten plating method, application of tungsten-plated diamond particle used as copper-based reinforced phase, and obtained diamond/copper composite material

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Embodiment 1

[0039] Weigh 2 g of synthetic diamond powder (100-150 μm in particle size), first put the diamond particles into an acetone solution, and clean them with ultrasonic vibration for 0.5 h to remove hydrocarbons, then wash them with deionized water until neutral; then Place the diamond particles in a 10g / L NaOH solution, clean them with ultrasonic vibration for 0.5h, clean and remove oil, take them out and wash them with deionized water until neutral; then place the diamond particles in 10% HNO 3 In the process, ultrasonic vibration was used to clean for 0.5h, and the cleaning was roughened. After taking it out, it was washed with deionized water until it was neutral; finally, the diamond particles were placed in an oven to dry. Continuous magnetron sputtering coating equipment is used to evenly spread the cleaned and dried diamond particles on the heating platform and then put the platform on the conveyor belt. During the deposition process, the platform is kept vibrating, and the...

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Abstract

The invention discloses a tungsten-plated diamond particle, a tungsten plating method, application of the tungsten-plated diamond particle used as a copper-based reinforced phase, and an obtained diamond / copper composite material, and belongs to the field of composite materials. According to the tungsten plating method of the diamond particle provided by the invention, an ultrasonic vibration manner is adopted, diamond particles continuously keep at a vibration state in the plating process, and meanwhile, the plating speed is controlled, so that each surface of the particles are uniformly plated. According to the tungsten-plated diamond particle obtained by utilizing the tungsten plating method provided by the invention, the bonding between plating layers and the surfaces of the diamond particles is perfect, the compactness is high, the problem that the plating layers are easy to fall off in the prior art is solved, and the interface resistance between the diamond particles and a matrix can be greatly reduced.

Description

technical field [0001] The invention belongs to the technical field of composite materials, in particular to a tungsten-plated diamond particle, a tungsten-plating method, its application as a copper-based reinforcing phase, and the obtained diamond / copper composite material. Background technique [0002] With the development of integration and miniaturization of high-power devices, the power density of power devices is increasing day by day. Related reports show that the power density of high-power devices can reach 1010W / m 2 , its calorific value is increasing, and power devices often cannot work normally due to high temperature in application, which seriously affects their working stability, safety and reliability, and the requirements for heat dissipation performance are getting higher and higher. Heat dissipation has become a major technical bottleneck in the development of the electronic information industry. Traditional electronic packaging heat sink materials tungst...

Claims

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Application Information

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IPC IPC(8): C23C14/02C23C14/18C23C14/35B22F1/02B22F3/105B22F3/26C22C1/10
CPCC23C14/02C23C14/185C23C14/35C23C14/223B22F3/105B22F3/26C22C1/1015C22C1/1036B22F2003/1051B22F1/17
Inventor 宋忠孝梁冰朱晓东钱旦李雁淮周子轩
Owner XI AN JIAOTONG UNIV
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