The invention relates to a light-emitting diode with a reflector structure. The light-emitting diode with the reflector structure sequentially comprises a metal layer, a distributed Bragg reflector (DBR) layer, a substrate, a buffer layer, an undoped GaN layer, an n-type GaN layer, an n electrode formed on the n-type GaN layer, an active layer, a p-type GaN layer, a transparent conductive layer and a p electrode formed on the transparent conductive layer from bottom to top, and is characterized in that a transition layer for improving the adhesion of the DBR layer and the metal layer is inserted between the metal layer and the DBR layer; and the metal layer, the transition layer and the DBR layer form the reflector structure of the light-emitting diode. According to the light-emitting diode, an Ag metal reflection layer is adopted, and an Au barrier is not required, so that the using amount of Au is reduced; in addition, the reflectivity of Ag is higher than that of Al, so that the reflectivity is favorably improved; and moreover, the transition layer is inserted, so that the problems of low adhesion and high separation rate of Ag and the DBR layer are solved.