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A kind of high q value microwave dielectric ceramic and aluminum ultra-low temperature co-firing method and high q value microwave dielectric ceramic preparation method

A technology of microwave dielectric ceramics and co-firing, which is applied in the direction of printed circuit manufacturing, conductive pattern formation, printed circuit components, etc., can solve the problems of increasing the manufacturing cost of components, reduce the manufacturing cost, improve the sintering activity, and accelerate the densification The effect of the process

Active Publication Date: 2021-08-13
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sintering temperature of the mainstream LTCC technology is still between 800 and 950°C, and it is often co-fired with the precious metal silver, which greatly increases the cost of component preparation

Method used

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  • A kind of high q value microwave dielectric ceramic and aluminum ultra-low temperature co-firing method and high q value microwave dielectric ceramic preparation method
  • A kind of high q value microwave dielectric ceramic and aluminum ultra-low temperature co-firing method and high q value microwave dielectric ceramic preparation method
  • A kind of high q value microwave dielectric ceramic and aluminum ultra-low temperature co-firing method and high q value microwave dielectric ceramic preparation method

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Experimental program
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Effect test

specific Embodiment approach 1

[0037] Combine below Figure 1-9 Describe this implementation mode, a method for ultra-low temperature co-firing of high-Q microwave dielectric ceramics and aluminum, using spark plasma sintering SPS technology to perform rapid ultra-low-temperature co-firing between high-Q microwave dielectric ceramics and aluminum.

[0038] Described this preparation method comprises the following steps:

[0039] Step 1: Add CuMoO 4 The ceramic powder is fully mixed with the solvent, and the dispersant, binder, plasticizer and defoamer are added in sequence, and the mixing is continued for 8 to 12 hours to obtain CuMoO 4 cast slurry;

[0040] Step 2: CuMoO 4 The tape casting slurry was prepared by tape casting process to CuMoO 4 Porcelain belt;

[0041] Step 3: CuMoO 4 Porcelain strips are trimmed, and the trimmed CuMoO 4 The raw porcelain tape adopts the screen printing process to print the circuit with aluminum paste;

[0042] Step 4: Finished CuMoO by screen printing process 4 Th...

specific Embodiment approach 2

[0058] Combine below Figure 1-9 Description of this embodiment, a method for ultra-low temperature co-firing of high-Q microwave dielectric ceramics and aluminum, using spark plasma sintering SPS technology to perform rapid ultra-low-temperature co-firing between high-Q microwave dielectric ceramics and aluminum, the preparation method includes the following steps :

[0059] Step 1: According to CuMoO 4 The stoichiometric ratio of CuO and MoO was weighed 3 , placed in a mixing tank, using ethanol or isopropanol as the ball milling medium, and ball milling for 10 to 20 hours to fully mix, take it out, spin dry to remove the ball milling medium, and then sieve the powder for use;

[0060] Step 2: Put the above mixed powder into a crucible, place it in a resistance furnace, raise the temperature to 550-650°C in an air atmosphere, keep it warm for 5-10 hours, and cool with the furnace, wherein the heating rate is 1-5°C / min;

[0061] Step 3: Put the above product into a ball ...

specific Embodiment approach 3

[0068] Combine below Figure 1-9 Description of this embodiment, a method for ultra-low temperature co-firing of high-Q microwave dielectric ceramics and aluminum, using spark plasma sintering SPS technology to perform rapid ultra-low-temperature co-firing between high-Q microwave dielectric ceramics and aluminum, the preparation method includes the following steps :

[0069] Step 1: Weigh CuO and MoO in a molar ratio of 1:1 3 , placed in a mixing tank, using ethanol as the ball milling medium, and ball milling for 10 to 20 hours to fully mix, take it out, spin dry to remove the ball milling medium, and then sieve the powder for use;

[0070] Step 2: Put the above mixed powder into a crucible, place it in a resistance furnace, raise the temperature to 550°C in an air atmosphere, keep it warm for 10 hours, and cool with the furnace, and the heating rate is 5°C / min;

[0071] Step 3: Put the above product into a ball mill jar for secondary ball milling for 4 hours, grind the ce...

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Abstract

The present invention relates to a ceramic and aluminum ultra-low temperature co-firing method and a ceramic preparation method, more specifically, a high-Q microwave dielectric ceramic and aluminum ultra-low temperature co-firing method and a high-Q microwave dielectric ceramic preparation method. The discharge plasma sintering SPS process is used for high Rapid ultra-low temperature co-firing between Q microwave dielectric ceramics and aluminum, CuMoO 4 The ceramic powder is fully mixed with the solvent, and the dispersant, binder, plasticizer and defoamer are added in sequence, and the mixing is continued for 8 to 12 hours to obtain CuMoO 4 Casting slurry; CuMoO 4 The tape casting slurry was prepared by tape casting process to CuMoO 4 Green ceramic tape; CuMoO 4 Porcelain strips are trimmed, and the trimmed CuMoO 4 The raw ceramic tape adopts the screen printing process to print the circuit with aluminum paste; for the CuMoO finished by the screen printing process 4 The raw ceramic tape is laminated and deglued, and loaded into the electric plasma sintering SPS mold; the high-Q microwave dielectric ceramic can be co-fired with aluminum in only 3 to 5 minutes under 600 ° C, which greatly reduces the multi-layer Sintering temperature and sintering time of microwave components.

Description

technical field [0001] The invention relates to a method for co-firing ceramics and aluminum at ultra-low temperature and a method for preparing ceramics, more specifically, a method for co-firing high-Q microwave dielectric ceramics and aluminum at ultra-low temperature and a method for preparing high-Q microwave dielectric ceramics. Background technique [0002] Modern communication technology urgently needs to develop microwave dielectric ceramics with low dielectric loss and low sintering temperature. At the same time, under the development trend of miniaturization, portability and multi-function of communication equipment, the requirements for the integration, modularization and low cost of electronic components are becoming more and more urgent. The multi-layer structure design developed based on low temperature co-fired ceramic LTCC technology is an important means to realize the integration of components. However, the sintering temperature of the mainstream LTCC tec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/495C04B35/622C04B35/64C04B41/88H05K1/03H05K3/12
CPCC04B35/495C04B35/622C04B35/64C04B41/5155C04B41/88C04B2235/3281C04B2235/656C04B2235/6567C04B2235/666H05K1/0306H05K3/1216C04B41/4539C04B41/4578C04B41/0072
Inventor 张标叶枫刘强叶健高晔叶凯
Owner HARBIN INST OF TECH