Method and device for multi-line silicon chip cutting with free-solidified compound abrasives

A multi-wire cutting and composite abrasive technology, which is applied in grinding/polishing equipment, metal processing equipment, stone processing equipment, etc., can solve the problem of not meeting the development requirements of silicon wafers, making manufacturing technology more difficult, and affecting the effect of abrasives To achieve the effect of enhancing microscopic plastic cutting performance, reducing surface cracks, and reducing damage rate
CN110497546AInactive Publication Date: 2019-11-26HARBIN UNIV OF COMMERCE

Patent Information

Authority / Receiving Office
CN ยท China
Current Assignee / Owner
HARBIN UNIV OF COMMERCE
Publication Date
2019-11-26
Estimated Expiration
Not applicable ยท inactive patent

Smart Images

  • Figure 1
    Figure 1
Patent Text Reader

Abstract

A method and device for multi-line silicon chip cutting with free-solidified compound abrasives belong to the technical field of processing of semiconductor materials and solve problems in silicon crystal slicing. The method for multi-line silicon chip cutting with the free-solidified compound abrasives comprises the steps that a silicon crystal ingot is cut through multi-line cutting with solidified abrasives, and a grinding solution containing suspended diamond abrasive granules is sprinkled to a cut area; and a metal wire with the diamond abrasive particles solidified on the surface bringsthe grinding solution containing the suspended diamond grinding particles into a cutting seam of the silicon crystal ingot during wire walking, so joint effects of free abrasives and the solidified abrasives are formed to jointly cut the silicon crystal ingot, and the silicon crystal ingot is cut into multiple slices during one time of processing. The device for multi-line silicon chip cutting with the free-solidified compound abrasives comprises a free abrasive multi-line cutting device, wherein the diamond abrasive particles are solidified on surfaces of all the metal wires of the free abrasive multi-line cutting device. The method and device provided by the invention are applied to cutting of silicon chips.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of semiconductor material processing, and in particular relates to a method and equipment for multi-wire cutting of silicon wafers with free-solidified composite abrasives. Background technique

[0002] Silicon-based semiconductor processing technology is a key technical condition for the development of high-tech industries such as integrated circuits, electronic information, and solar photovoltaics. Silicon crystal slicing is the front-end process of the semiconductor processing industry chain, and its processing capacity directly determines the performance and quality of subsequent processes and end products. In order to continuously improve the performance and economic benefits of end products, silicon crystal slicing processing technology is required to develop in the direction of large diameter, small thickness, high quality, high production capacity, high efficiency and low consumption. In the process...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More