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Cr-Me multilayer film based on Zr as substrate and preparation method thereof

A multi-layer film and substrate technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve problems such as safety accidents, achieve improved corrosion resistance, increase economic benefits and safety, and increase corrosion The effect of weight reduction

Pending Publication Date: 2019-11-26
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the zirconium alloy pipe is easy to react with high-temperature water vapor to release hydrogen, causing serious safety accidents

Method used

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  • Cr-Me multilayer film based on Zr as substrate and preparation method thereof
  • Cr-Me multilayer film based on Zr as substrate and preparation method thereof
  • Cr-Me multilayer film based on Zr as substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] This implementation case provides a method for preparing a Cr-Al multilayer film, which includes the following steps:

[0027] 1) Cleaning and drying the Zr-4 alloy substrate, and cleaning the equipment.

[0028] 2) Sputtering the Cr-Al multilayer film on the surface of the Zr-4 alloy by magnetron sputtering method, and finally obtain the Zr substrate with the Cr-Al multilayer film grown.

[0029] Specifically, in step 1), the substrate is ultrasonically cleaned with absolute ethanol and deionized water for 10 minutes, and then dried with high-purity nitrogen with a purity of 99.99%.

[0030] In step 2), a magnetron sputtering device is used to sputter the Cr-Al multilayer film. Two targets are placed on the rotating substrate holder, where the rotation speed ω=11r / min, the switching time of the target baffle is controlled to control the thickness of the Cr film and the Al film. The target material is a pure Cr target, a pure Al target, and argon with a purity of 99.99%; the s...

Embodiment 2

[0038] This implementation case provides a method for preparing a Cr-Nb multilayer film, which includes the following steps:

[0039] 1) Cleaning and drying the Zr-4 alloy substrate, and cleaning the equipment.

[0040] 2) Sputtering the Cr-Nb multilayer film on the surface of the Zr-4 alloy by magnetron sputtering, and finally obtain the Zr substrate on which the Cr-Nb multilayer film is grown.

[0041] Specifically, in step 1), the substrate is ultrasonically cleaned with absolute ethanol and deionized water for 10 minutes, and then dried with high-purity nitrogen with a purity of 99.99%.

[0042] In step 2), a magnetron sputtering device is used to sputter the Cr-Nb multilayer film. Place two targets on the rotating substrate holder, where the rotation speed ω=11r / min, control the switching time of the target baffle to control the thickness of the Cr film and the Nb film. The target material is a pure Cr target, a pure Nb target, and argon with a purity of 99.99%; the sputtering p...

Embodiment 3

[0049] This implementation case provides a method for preparing a Cr-Zr multilayer film, which includes the following steps:

[0050] 1) Cleaning and drying the Zr-4 alloy substrate, and cleaning the equipment.

[0051] 2) Sputtering the Cr-Zr multilayer film on the surface of the Zr-4 alloy by magnetron sputtering, and finally obtain the Zr substrate on which the Cr-Zr multilayer film is grown.

[0052] Specifically, in step 1), the substrate is ultrasonically cleaned with absolute ethanol and deionized water for 10 minutes, and then dried with high-purity nitrogen with a purity of 99.99%.

[0053] In step 2), a magnetron sputtering device is used to sputter the Cr-Zr multilayer film. Place the Cr and Zr targets on the rotating substrate holder, where the rotation speed ω=11r / min, and pass in argon with a purity of 99.99%; the sputtering power is 120W, the bias voltage is -80V, the argon flow rate is 30sccm, and the working pressure 1.0×10 -4 Pa;; The pre-sputtering time is 15min to...

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Abstract

The invention discloses a Cr-Me multilayer film based on Zr as a substrate and a preparation method thereof and belongs to the field of plating of physical vapor deposition. By taking a Zr-4 alloy (prepared from 1.20-1.70% of Sn, 0.18-0.24% of Fe, 0.07-0.13% of Cr and 0.03-0.08% of Ni) as the substrate, the Cr-Me multilayer film is coated to the surface of Zr by means of a magnetron sputtering method. The modulation ratio of the Cr-Me multilayer film (Zr, Al, Mg and Nb) is 1: (0.1-10). The total number of layers of the Cr-Me multilayer film based on Zr as the substrate is 2-100 and the thickness is 0.5-50 [mu]m. The plated Cr-Me multilayer film can improve high-temperature water vapor corrosion resistance and oxidizing performance of a zirconium alloy tubular product, so that the service life of a zirconium alloy pressure pipe is prolonged, the nuclear leakage accident is reduced, and the economical benefit and the safety guarantee of nuclear industry are further improved.

Description

Technical field [0001] The invention belongs to the field of modification of zirconium alloy tube cladding materials for nuclear use, and specifically relates to a Cr-Me multilayer film based on Zr and a preparation method thereof Background technique [0002] At present, the world's demand for clean energy is increasing, and nuclear power has the advantages of green environmental protection and huge production capacity. At the same time, as a high-radiation industry, its safety issues cannot be underestimated. Zirconium alloy is widely used as a material for high-temperature water vapor transmission pipelines in the nuclear power industry due to its low thermal neutron absorption, low expansion coefficient, and high thermal conductivity. However, because zirconium alloy pipes are prone to react with high temperature water vapor to release hydrogen, serious safety accidents are caused. Therefore, people modify the zirconium alloy by adding alloying elements or plating a protecti...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/16G21C3/07
CPCC23C14/165C23C14/352G21C3/07Y02E30/30
Inventor 李雁淮关博远张娜宋忠孝朱晓东孙军
Owner XI AN JIAOTONG UNIV
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