Preparation technology of high density molybdenum-tantalum alloy sputtering target material

A sputtering target material and preparation process technology, applied in metal material coating process, sputtering coating, metal processing equipment, etc. The finished product rate and qualified rate, the convenience of industrialized mass production, and the effect of low production cost

Inactive Publication Date: 2019-12-06
LUOYANG SIFON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method includes powder selection, powder mixing, compression molding, sintering, vacuum heat treatment, rolling, mechanical processing, binding packaging and other processes, but the tantalum powder used in the preparation process has not been hydrogenated, and the particle size is difficult to be very fine. It is difficult to increase the density, and there is room for improvement in the process

Method used

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  • Preparation technology of high density molybdenum-tantalum alloy sputtering target material
  • Preparation technology of high density molybdenum-tantalum alloy sputtering target material
  • Preparation technology of high density molybdenum-tantalum alloy sputtering target material

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Comparison scheme
Effect test

Embodiment 1

[0032] A preparation process for a high-density molybdenum-tantalum alloy sputtering target, comprising the following steps:

[0033] S1. Hydrogenation treatment of tantalum powder: Put the high-purity tantalum powder in a sintering furnace and roast it with hydrogen gas. The roasting temperature is controlled at 500°C and the roasting time is controlled at 1 hour to obtain hydrogenated tantalum hydride powder, and then ball mill the tantalum hydride powder , the ball milling time is controlled at 16 hours, and the tantalum hydride powder with the required particle size is obtained;

[0034] S2. Raw material mixing: Add molybdenum powder and tantalum hydride powder into the mixer at a weight ratio of 9:1. The purity of molybdenum powder and tantalum hydride powder is not less than 99.5%. Molybdenum powder passes through a 200-mesh sieve and ball mills The tantalum hydride powder is passed through a 160-mesh sieve. After adding the ball-milled molybdenum powder and tantalum hyd...

Embodiment 2

[0042] This embodiment includes the following steps:

[0043] S1. Hydrogenation treatment of tantalum powder: Put the high-purity tantalum powder in a sintering furnace and roast it with hydrogen gas. The roasting temperature is controlled at 500°C and the roasting time is controlled at 1 hour to obtain hydrogenated tantalum hydride powder, and then ball mill the tantalum hydride powder , the ball milling time is controlled at 16 hours, and the tantalum hydride powder with the required particle size is obtained;

[0044] S2. Raw material mixing: Add molybdenum powder and tantalum hydride powder into the mixer at a weight ratio of 9:1. The purity of molybdenum powder and tantalum hydride powder is not less than 99.5%. Molybdenum powder passes through a 200-mesh sieve and ball mills The tantalum hydride powder passed through a 160-mesh sieve, after adding molybdenum powder and tantalum hydride powder into the mixer, flush the mixing body with argon for 15 minutes, then close the...

Embodiment 3

[0052] This embodiment includes the following steps:

[0053] S1. Hydrogenation treatment of tantalum powder: put a certain amount of high-purity tantalum powder in a sintering furnace and roast it with hydrogen gas. The roasting temperature is controlled at 500°C and the roasting time is controlled at 1 hour. The hydrogenated tantalum hydride powder is obtained, and then the tantalum hydride powder is ball milled, and the ball milling time is controlled at 16 hours to obtain the tantalum hydride powder with the required particle size.

[0054] S2. Raw material mixing: Add molybdenum powder and tantalum hydride powder into the mixer at a weight ratio of 9:1. The purity of molybdenum powder and tantalum hydride powder is not less than 99.5%. Molybdenum powder passes through a 200-mesh sieve and ball mills The tantalum hydride powder passed through a 160-mesh sieve, after adding molybdenum powder and tantalum hydride powder into the mixer, flush the mixing body with argon for 15...

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Abstract

The invention provides a preparation technology of a high density molybdenum-tantalum alloy sputtering target material. The preparation technology of the high density molybdenum-tantalum alloy sputtering target material includes following steps: S1, performing hydrotreating on tantalum powder; S2, mixing raw materials; S3, preforming powder loading operation on a gum cover; S4, performing isostatic cool pressing operation: after raising pressure to certain value, keeping the pressure for a certain time, then performing decompression, and finally fetching out a compressed billet from the gum cover; S5, preforming vacuum sintering; S6, performing hot rolling operation: performing metal casing rolling on molybdenum-tantalum alloy, and removing stress through annealing after hot rolling; and S7, performing machining operation of grinding and the like, and obtaining the final product of the needed size. The preparation technology of the high density molybdenum-tantalum alloy sputtering target material is simple in technical step, and convenient and quick to operate, and the prepared molybdenum-tantalum alloy sputtering target material has the purity and the relative density which meet use demands in the high-end electronic product film plating field, and is low in production cost, wide in product size and beneficial to industrial mass production.

Description

technical field [0001] The invention belongs to the field of high-temperature refractory metal target preparation, and in particular relates to a preparation process of a high-density molybdenum-tantalum alloy sputtering target. Background technique [0002] With the continuous improvement of the comprehensive performance of electronic products and the continuous improvement of the use environment, the performance of the sputtering target is also required to be higher and higher. Although molybdenum has become an ideal electrode and wiring material for flat-panel displays, thin-film solar cells, and barrier layer materials for semiconductors, in applications, it is found that molybdenum is still weak in corrosion resistance (discoloration) and adhesion (peeling of the film). There is a problem. Research and practice have shown that adding alloy elements such as tantalum to the molybdenum sputtering target can balance the specific impedance, stress, corrosion resistance and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F1/00B22F3/04B22F3/10B22F3/18B22F3/24C23C14/34
CPCB22F3/04B22F3/1007B22F3/18B22F3/24B22F3/001C23C14/3414B22F2003/185B22F2003/248B22F2998/10B22F2999/00B22F1/145B22F2201/20B22F2201/013B22F2009/043
Inventor 李帅方方宏孙虎民陈亚光
Owner LUOYANG SIFON ELECTRONICS
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