Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof

A ferroelectric material and perovskite technology, applied in inorganic chemistry, circuits, electrical components, etc., can solve the problems of inability to meet the packaging requirements of electronic devices, poor water vapor and oxygen barrier ability, and low temperature tolerance, and achieve improvement. Responsivity and photoelectric conversion efficiency, improved environmental stability and thermal stability, improved mobility and lifespan effects

Inactive Publication Date: 2019-12-20
NANJING UNIV OF SCI & TECH
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Organic substrates such as PET and PI have good flexibility, light weight, and good impact resistance, but organic materials have poor barrier properties to water vapor and oxygen, which cannot meet the packaging requirements of electronic devices; It is easy to bend and deform; in addition, the surface roughness of the organic substrate is often very large, and the multilayer thin film prepared on the organic substrate is prone to defects, which affects the performance of the device, further limiting the application of such flexible detectors

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof
  • Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof
  • Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.9 Sr 0.1 Br 2 Cl, 0.1 is the atomic percentage of element Sr, the specific preparation steps are:

[0032] (1) Combine CsCl (0.4mmol), PbBr 2 (0.36mmol) and SrBr 2 (0.04mmol) was dissolved in 10mL DMF (dimethylformamide), 1mL OA (oleic acid) and 0.5mL OAm (oleylamine) were added to stabilize the precursor solution, and then the 1mL precursor solution was quickly stirred under vigorous stirring. Add to 10 mL of toluene.

[0033] (2) Before spin coating, drop 1 mL of chlorobenzene solvent onto the substrate and let it stand for 15 seconds to wash off the DMF solvent in the wet perovskite film and induce rapid crystallization; during spin coating, a small number of steps ( 1) The mixed solution is dropped to the center of the substrate, and the substrate is driven to rotate so that the liquid forming film layer on the substrate is evenly spin...

Embodiment 2

[0045] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.7 Sr 0.3 Br 2 Cl, 0.3 is the atomic percentage of element Sr.

[0046] The preparation method of the halogen-doped perovskite ferroelectric material in this embodiment is the same as that in embodiment 1, except that the atomic percentage of element Sr in this embodiment is 0.3, and the halogen-doped perovskite in this embodiment The raw materials used in the specific preparation step (1) of ferroelectric materials are: CsCl (0.4 mmol), PbBr 2 (0.28mmol) and SrBr 2 (0.12mmol).

[0047] The results of specific experimental parameters, saturated polarization, residual polarization, carrier mobility, and carrier lifetime of the halogen-doped perovskite ferroelectric material obtained in this example are listed in Table 1.

[0048] The halogen-doped perovskite ferroelectric material prepared in this embodiment is used as the light-absorbing laye...

Embodiment 3

[0052] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.9 Ba 0.1 Br 2 Cl, 0.1 is the atomic percentage of element Ba.

[0053] The preparation method of the halogen-doped perovskite ferroelectric material in this embodiment is the same as that in embodiment 1, except that the doping element in this embodiment is Ba, the atomic percentage of element Ba is 0.1, and the The specific preparation step (1) of the halogen-doped perovskite ferroelectric material uses the raw materials: CsCl (0.4 mmol), PbBr 2 (0.36mmol) and BaBr 2 (0.04mmol).

[0054] The results of specific experimental parameters, saturated polarization, residual polarization, carrier mobility, and carrier lifetime of the halogen-doped perovskite ferroelectric material obtained in this example are listed in Table 1.

[0055] The halogen-doped perovskite ferroelectric material prepared in this embodiment is used as the light-absorbing l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a doped halogen perovskite ferroelectric material and a fully inorganic flexible light detector thereof. The molecular formula of the material is CsPb<1-x>A<x>Br<2>Cl, whereinthe A of the molecular formula is one or two of Sr, Ba, Ca, Mg, Mn, Zn or Cu elements, x is the atomic percentage of the element A, and the x is greater than or equal to 0.05 and less than or equal to 0.3, and the fully inorganic flexible light detector is specifically and successively composed of a flexible fluoride crystal mica substrate, an IMO bottom electrode, a TiO2 electron transport layer, an absorption layer, a NiO hole transport layer and an ITO upper electrode. According to the doped halogen perovskite ferroelectric material and the fully inorganic flexible light detector thereof,by doping the Sr, the Ba, the Ca and other elements, the migration rate is effectively increased, the service life of carriers is effectively prolonged, the responsivity and photoelectric conversion efficiency of the light detector are improved, the light detector is all made of inorganic materials, the environmental stability and thermal stability of a device are greatly improved, and in addition, the light detector has good flexibility and bending resistance, and has huge application prospects in the field of flexible optoelectronic devices.

Description

Technical field [0001] The invention belongs to the field of perovskite ferroelectric materials, and specifically relates to a halogen-doped perovskite ferroelectric material and an all-inorganic flexible optical detector. Background technique [0002] Due to its high carrier mobility and long carrier lifetime, halide perovskite materials have received a lot of research in the field of optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Organic-inorganic composite perovskite CH 3 NH 3 PbBr 3 (MAPbBr 3 ) Because of its narrow band gap, high carrier mobility and small exciton binding energy, it is widely used in solar cells (DSSCs). However, this material has poor stability in the atmosphere and is easily degraded and hydrolyzed, which brings certain obstacles to its application and development. Therefore, in recent years, many scientific workers have begun to study the use of cesium lead halogen CsPbX 3 (X=Cl, Br, I) is represented by the all-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01G21/00H01L31/032H01L31/09
CPCC01G21/006C01P2002/34C01P2006/40H01L31/0321H01L31/09
Inventor 马晓姿赵泽恩付丹玲袁国亮
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap