Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof

A ferroelectric material and perovskite technology, applied in inorganic chemistry, circuits, electrical components, etc., can solve the problems of inability to meet the packaging requirements of electronic devices, poor water vapor and oxygen barrier ability, and low temperature tolerance, and achieve improvement. Responsivity and photoelectric conversion efficiency, improved environmental stability and thermal stability, improved mobility and lifespan effects
CN110589876AInactive Publication Date: 2019-12-20NANJING UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
NANJING UNIV OF SCI & TECH
Publication Date
2019-12-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a doped halogen perovskite ferroelectric material and a fully inorganic flexible light detector thereof. The molecular formula of the material is CsPb<1-x>A<x>Br<2>Cl, whereinthe A of the molecular formula is one or two of Sr, Ba, Ca, Mg, Mn, Zn or Cu elements, x is the atomic percentage of the element A, and the x is greater than or equal to 0.05 and less than or equal to 0.3, and the fully inorganic flexible light detector is specifically and successively composed of a flexible fluoride crystal mica substrate, an IMO bottom electrode, a TiO2 electron transport layer, an absorption layer, a NiO hole transport layer and an ITO upper electrode. According to the doped halogen perovskite ferroelectric material and the fully inorganic flexible light detector thereof,by doping the Sr, the Ba, the Ca and other elements, the migration rate is effectively increased, the service life of carriers is effectively prolonged, the responsivity and photoelectric conversion efficiency of the light detector are improved, the light detector is all made of inorganic materials, the environmental stability and thermal stability of a device are greatly improved, and in addition, the light detector has good flexibility and bending resistance, and has huge application prospects in the field of flexible optoelectronic devices.
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Description

Technical field

[0001] The invention belongs to the field of perovskite ferroelectric materials, and specifically relates to a halogen-doped perovskite ferroelectric material and an all-inorganic flexible optical detector. Background technique

[0002] Due to its high carrier mobility and long carrier lifetime, halide perovskite materials have received a lot of research in the field of optoelectronic devices including solar cells, photodetectors, and light-emitting diodes. Organic-inorganic composite perovskite CH 3 NH 3 PbBr 3 (MAPbBr 3 ) Because of its narrow band gap, high carrier mobility and small exciton binding energy, it is widely used in solar cells (DSSCs). However, this material has poor stability in the atmosphere and is easily degraded and hydrolyzed, which brings certain obstacles to its application and development. Therefore, in recent years, many scientific workers have begun to study the use of cesium lead halogen CsPbX 3 (X=Cl, Br, I) is represented by the all-...

Claims

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