Doped halogen perovskite ferroelectric material and fully inorganic flexible light detector thereof
A ferroelectric material and perovskite technology, applied in inorganic chemistry, circuits, electrical components, etc., can solve the problems of inability to meet the packaging requirements of electronic devices, poor water vapor and oxygen barrier ability, and low temperature tolerance, and achieve improvement. Responsivity and photoelectric conversion efficiency, improved environmental stability and thermal stability, improved mobility and lifespan effects
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Embodiment 1
[0031] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.9 Sr 0.1 Br 2 Cl, 0.1 is the atomic percentage of element Sr, the specific preparation steps are:
[0032] (1) Combine CsCl (0.4mmol), PbBr 2 (0.36mmol) and SrBr 2 (0.04mmol) was dissolved in 10mL DMF (dimethylformamide), 1mL OA (oleic acid) and 0.5mL OAm (oleylamine) were added to stabilize the precursor solution, and then the 1mL precursor solution was quickly stirred under vigorous stirring. Add to 10 mL of toluene.
[0033] (2) Before spin coating, drop 1 mL of chlorobenzene solvent onto the substrate and let it stand for 15 seconds to wash off the DMF solvent in the wet perovskite film and induce rapid crystallization; during spin coating, a small number of steps ( 1) The mixed solution is dropped to the center of the substrate, and the substrate is driven to rotate so that the liquid forming film layer on the substrate is evenly spin...
Embodiment 2
[0045] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.7 Sr 0.3 Br 2 Cl, 0.3 is the atomic percentage of element Sr.
[0046] The preparation method of the halogen-doped perovskite ferroelectric material in this embodiment is the same as that in embodiment 1, except that the atomic percentage of element Sr in this embodiment is 0.3, and the halogen-doped perovskite in this embodiment The raw materials used in the specific preparation step (1) of ferroelectric materials are: CsCl (0.4 mmol), PbBr 2 (0.28mmol) and SrBr 2 (0.12mmol).
[0047] The results of specific experimental parameters, saturated polarization, residual polarization, carrier mobility, and carrier lifetime of the halogen-doped perovskite ferroelectric material obtained in this example are listed in Table 1.
[0048] The halogen-doped perovskite ferroelectric material prepared in this embodiment is used as the light-absorbing laye...
Embodiment 3
[0052] A halogen-doped perovskite ferroelectric material, the molecular formula of the halogen-doped perovskite ferroelectric material is CsPb 0.9 Ba 0.1 Br 2 Cl, 0.1 is the atomic percentage of element Ba.
[0053] The preparation method of the halogen-doped perovskite ferroelectric material in this embodiment is the same as that in embodiment 1, except that the doping element in this embodiment is Ba, the atomic percentage of element Ba is 0.1, and the The specific preparation step (1) of the halogen-doped perovskite ferroelectric material uses the raw materials: CsCl (0.4 mmol), PbBr 2 (0.36mmol) and BaBr 2 (0.04mmol).
[0054] The results of specific experimental parameters, saturated polarization, residual polarization, carrier mobility, and carrier lifetime of the halogen-doped perovskite ferroelectric material obtained in this example are listed in Table 1.
[0055] The halogen-doped perovskite ferroelectric material prepared in this embodiment is used as the light-absorbing l...
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