Synaptic transistor and preparation method thereof

A transistor and synapse technology, applied in the field of synaptic transistors and their preparation, can solve the problems of unstable physical and chemical properties of organic channel materials, unfavorable device stability and subsequent integration, and increase the difficulty of large-scale integration. Application and large-scale integration, good application value, the effect of reducing the difficulty of preparation

Active Publication Date: 2019-12-24
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

At the same time, the commonly used electrolyte is ionic liquid, which is not conducive to the stability of the device and subsequent integration.
[0005] At present, two-dimensional semiconductor materials are mainly prepared by mechanical exfoliation. The preparation process is complex and poorly controllable, which is not conducive to large-scale integration applications, and the prepared two-dimensional semiconductor materials need to be transferred to the substrate surface. On the one hand, the process steps are increased. On the other hand, it is easy to introduce impurities during the transfer process and easily lead to changes in the structure of semiconductor materials, which further increases the difficulty of large-scale integration.
[0006] Organic channel materials are physically and chemically unstable and incompatible with existing semiconductor processes

Method used

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  • Synaptic transistor and preparation method thereof
  • Synaptic transistor and preparation method thereof
  • Synaptic transistor and preparation method thereof

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Embodiment 1

[0038] In this embodiment, the device structure is as figure 1 As shown, an insulating substrate 1 and a channel material 2, a source electrode 3, a drain electrode 4, and a gate electrode 5 on the substrate 1 are included to form a planar three-terminal synaptic transistor. The source electrode 3 and the drain electrode 4 are respectively located at two ends of the channel material 2 and form an ohmic contact with the channel material 2. A solid electrolyte 6 is covered on the channel region and part of the gate electrode region, and the solid electrolyte 6 contains an organic carrier that is electrically insulated and movable ions.

[0039] In this embodiment, the substrate is a silicon wafer with a surface silicon dioxide layer, and the thickness of the silicon dioxide layer is 300 nm. The channel material is tetrahedral amorphous carbon (Tac). The source electrode 3, the drain electrode 4, and the gate electrode 5 all use Pt / Ti. The solid electrolyte contains polyethylene o...

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Abstract

The invention provides a synaptic transistor and a preparation method thereof. The synaptic transistor comprises an insulating substrate, a channel material, a source electrode, a gate electrode and adrain electrode. The channel material, the source electrode, the gate electrode and the drain electrode are located on the substrate to form a planar three-terminal structure. The channel material isan amorphous carbon film. A channel region and part of a gate electrode region are covered with a solid electrolyte, and the solid electrolyte contains an organic matter carrier insulated from electrons, and movable ions. The synaptic transistor has the advantages of high stability, low power consumption and the like, and can be applied to neuromorphic devices. Moreover, the amorphous carbon filmis directly prepared on the substrate to form a channel, so that the preparation difficulty is reduced, and the preparation process is simplified. Large-scale integration of the synaptic transistor can be realized, and the synaptic transistor has a good application value.

Description

Technical field [0001] The invention relates to the field of semiconductor devices, in particular to a synaptic transistor and a preparation method thereof. Background technique [0002] In the era of big data, computers with traditional von Neumann architecture are difficult to handle the ever-increasing data and information. How to improve the efficiency of storage and computing has become a problem that humans have to solve. The human brain has the advantages of extremely high computing efficiency, low computing power consumption, and processing complex processes. At the same time, it has been found in physiological research that the completion of the brain's learning and memory functions is inseparable from synapses. Therefore, the development of new electronic devices with neurosynaptic functions is of great significance for realizing neuromorphic computing and meeting information processing needs. [0003] The synapse in the organism is the key to the exchange of information...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/16H01L29/161H01L51/05H01L29/772H01L21/335
CPCH01L29/0684H01L29/1029H01L29/1604H01L29/1602H01L29/161H01L29/772H01L29/66409H10K10/484
Inventor 李润伟叶俊雅高双郭鹏汪爱英
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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