RC-IGBT device integrated with lateral freewheel diode by using junction terminal

A technology of freewheeling diodes and junction terminals, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of increasing the back plate process, easily causing negative resistance effects, and conductance modulation lag, so as to avoid premature breakdown and conductance modulation The effect is advanced and the effect of improving the voltage blocking ability

Active Publication Date: 2019-12-24
CHONGQING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Occupying the area of ​​the P-type collector due to the longitudinal design of the freewheeling diode will weaken the current capability, and the conductance modulation will lag due to this short circuit structure, which will easily cause negative resistance effect
In addition, the complex design of the collector structure adds an additional back-plate process, and the manufacturing cost is high

Method used

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  • RC-IGBT device integrated with lateral freewheel diode by using junction terminal
  • RC-IGBT device integrated with lateral freewheel diode by using junction terminal
  • RC-IGBT device integrated with lateral freewheel diode by using junction terminal

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Experimental program
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Embodiment 1

[0052] Such as Image 6 As shown, a preferred RC-IGBT device using a junction terminal integrated lateral freewheeling diode in the embodiment of the present invention includes a gate contact region 1, an emitter contact region 2, a metal field plate 3, and an N-type collector contact region 4 , P-type collector contact region 4', emitter 5, cell region P-type well 6, transition region P-type well 7, first field-limiting ring 8, second field-limiting ring 9, third field-limiting ring 10, N-type collector 11 , N-type buffer layer 12 , P-type collector 13 , N-type drift region 14 , gate oxide layer 15 and field oxide layer 16 .

[0053] The P-type collector electrode 13 completely covers the upper surface of the P-type collector electrode contact region 4'. The P-type collector 13 is doped silicon with a thickness of 1 μm, a width of 335 μm, and a doping concentration selected to the 18th power. The P-type collector contact region 4' has a width of 335 μm and a thickness of 2 ...

Embodiment 2

[0073] Such as Figure 7 As shown, the preferred embodiment of the present invention is an RC-IGBT device that utilizes junction terminations to integrate lateral freewheeling diodes. Three P-type buried layers 17 with the same technical parameters are added to the structure of Embodiment 1, and they are overlapped at equal intervals vertically. It is arranged at the lower ends of the first field limiting ring 8 , the second field limiting ring 9 and the third field limiting ring 10 . The P-type buried layer 17 has a width of 80 μm and a thickness of 4 μm, and the order of doping concentration is selected to the 16th power.

Embodiment 3

[0075] Such as Figure 8 As shown, an RC-IGBT device using a junction terminal integrated lateral freewheeling diode is preferred in the embodiment of the present invention. On the structure of Embodiment 1, an N-type collector 11 is extended to three arranged from left to right N-type collectors 11, the three N-type collectors 11 have the same technical parameters and dimensions, and the distance between them is adjustable. The middle parts of the upper surfaces of the three N-type collectors 11 are covered by the three N-type collector contact regions 4 , and the left and right sides of the upper surfaces are covered by the field oxide layer 16 .

[0076] With the help of MEDICI simulation software, it is available for the provided figure 1 As shown in the traditional RC-IGBT, as figure 2 The TPRC-IGBT that shown dielectric isolation and junction isolation combine and the novel RC-IGBT of embodiment 1 that the present invention proposes (such as Image 6 shown) for simu...

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Abstract

The invention relates to an RC-IGBT device integrated with a lateral freewheel diode by using a junction terminal and belongs to the technical field of semiconductors. The device comprises a gate contact region 1, an emitter contact region 2, a metal field plate 3, an N-type collector contact region 4, a P-type collector contact region 4', an emitter 5, a cellular region P-type well 6, a transition region P-type well 7, a first field limiting ring 8, a second field limiting ring 9, a third field limiting ring 10, an N-type collector 11, an N-type buffer layer 12, a P-type collector 13, an N-type drift region 14, a gate oxide layer 15 and a field oxide layer 16. On the premise of ensuring relatively low turn-off loss, reverse conduction performance and relatively high blocking voltage, a negative resistance effect existing when a traditional device is conducted can be eliminated, the working stability and the current conduction capability of the device are improved, and meanwhile, the manufacturing cost can be reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to an RC-IGBT device which utilizes junction terminals to integrate lateral freewheeling diodes. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully controlled type composed of BJT (Bipolar Junction Transistor) bipolar transistor and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) insulated gate field effect transistor It is a voltage-driven power semiconductor device, so it has both the advantages of high input impedance of MOSFET and low conduction voltage drop of BJT. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. Therefore, it will become one of the core components of intelligent power integrated circuits and is widely used in home appliances, environmentally friendly automobiles and industrial production. It is a semiconductor power device with great potential...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L29/739
CPCH01L29/7393H01L29/7394H01L29/0623
Inventor 陈伟中黄垚李顺黄元熙黄义贺利军张红升周通
Owner CHONGQING UNIV OF POSTS & TELECOMM
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