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Method for preparing diamond film on stainless steel surface with Cr/CrAlN as transition layer

A diamond thin film and stainless steel technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problems of difficult formation of diamond thin film, poor thermal expansion coefficient, low hardness of the film, etc., and achieve excellent film-base bonding force Effect

Active Publication Date: 2019-12-31
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the direct deposition of diamond films on the surface of stainless steel has the following problems: (1) Carbon has a high diffusion rate in stainless steel. When the carbon in the CVD atmosphere reaches the stainless steel surface, it will quickly diffuse into the stainless steel, resulting in the inability to achieve diamond nucleation. The required critical carbon concentration makes it difficult to form diamond films
(2) The graphite catalysis of Fe and Ni elements in stainless steel will preferentially form a loose graphite layer on the surface of the sample, causing the film to fall off
(3) There is a huge difference in thermal expansion coefficient between the stainless steel and the diamond film, so that during the CVD cooling process, a huge thermal stress is formed between the diamond film and the stainless steel, causing the film to fall off
However, since the hardness of the CrN transition layer is 18GPa, which is much lower than that of diamond, the hardness of the entire film is low, which affects the performance and life of the film.

Method used

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  • Method for preparing diamond film on stainless steel surface with Cr/CrAlN as transition layer
  • Method for preparing diamond film on stainless steel surface with Cr/CrAlN as transition layer
  • Method for preparing diamond film on stainless steel surface with Cr/CrAlN as transition layer

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Effect test

Embodiment 1

[0031] Grind 3Cr13 stainless steel with 600#, 800#, 1200#, 1500#, 2000# sandpaper in sequence, then ultrasonically shake the polished samples with acetone and absolute ethanol for 20 minutes, dry them quickly with a hair dryer, and put them into PVD Cr / CrAlN transition layer deposition is carried out in the equipment. The purity of the Cr target and the Al target used in the deposition process are both 99.999%, and the target base distance is 70 mm. The process parameters for depositing the Cr layer are: vacuum degree 1×10 –3 Pa, the Ar gas flow is 20 sccm, the working pressure is 0.8 Pa, the Cr target power is 100 W, the substrate temperature is 300 °C, and the deposition time is 20 min. The process parameters for preparing the CrAlN layer are: Ar gas flow rate is 20 sccm, N 2 The gas flow rate is 5 sccm, the working pressure is 1 Pa, the Al target power is 120 W, the Cr target power is 100 W, the substrate temperature is 300 °C, and the deposition time is 60 min; In an a...

Embodiment 2

[0034] Grind 3Cr13 stainless steel with 600#, 800#, 1200#, 1500#, 2000# sandpaper in sequence, then ultrasonically shake the polished samples with acetone and absolute ethanol for 20 minutes, dry them quickly with a hair dryer, and put them into PVD equipment The deposition of Cr / CrAlN transition layer is carried out in the middle. During the deposition process, the purity of both Cr and Al targets was 99.999%, and the target-base distance was 70 mm. The process parameters for depositing the Cr layer are: vacuum degree 0.8×10 –3 Pa, the Ar gas flow rate is 20 sccm, the working pressure is 0.8 Pa, the Cr target power is 100 W, and the deposition time is 40 min. The process parameters for preparing the CrAlN layer are: Ar gas flow rate is 20 sccm, N 2 The gas flow rate is 5 sccm, the working pressure is 1.0 Pa, the Al target power is 180 W, the Cr target power is 100 W, the substrate temperature is 300 °C, and the deposition time is 120 min; In an acetone solution containing ...

Embodiment 3

[0037] Grind the 3Cr13 stainless steel with 600#, 800#, 1200#, 1500#, 2000# sandpaper in sequence, ultrasonically shake the polished samples with acetone and absolute ethanol for 20 minutes, dry them quickly with a hair dryer, and put them into the PVD equipment A Cr / CrAlN transition layer deposition is performed. The purity of the Cr and Al targets used in the deposition process is both 99.999%, and the target base distance is 70 mm. The process parameters for depositing the Cr layer are: the degree of vacuum is 0.7×10 –3 Pa, the Ar gas flow rate is 20 sccm, the working pressure is 0.8 Pa, the Cr target power is 100 W, and the deposition time is 10 min. The process parameters for preparing the CrAlN layer are: Ar gas flow rate is 20 sccm, N 2 The gas flow is 5 sccm, the working pressure is 1 Pa, the Al target power is 30 W, the Cr target power is 100 W, the substrate temperature is 300 °C, and the deposition time is 20 min. Then the sample of the Cr / CrAlN film transition ...

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Abstract

The invention discloses a method for preparing a diamond film on a stainless steel surface with Cr / CrAlN as a transition layer. The method is characterized by comprising the following steps of S1, pretreatment of a stainless steel sample, wherein the stainless steel sample is polished with abrasive paper, ultrasonically treated with acetone and absolute ethyl alcohol, and then dried for later use;S2, deposition of the Cr / CrAlN layer on the stainless steel surface, wherein the stainless steel sample treated in step S1 is placed on a sample table of a magnetron sputtering device, Cr and Al target materials are mounted on a target base, and a Cr film and a CrAlN film are deposited on the surface of a stainless steel substrate, so that the stainless steel sample comprising the Cr / CrAlN transition layer is obtained; and S3, preparation of the diamond film on the stainless steel surface, wherein the stainless steel sample, comprising the Cr / CrAlN transition layer, obtained in step S2 is ultrasonically crystallized, and the diamond film is deposited by means of a heating wire through HFCVD, so that the diamond film is prepared on the stainless steel surface with Cr / CrAlN as the transition layer. By the adoption of the technique, the bonding force between the diamond film and stainless steel is high, and the film does not fall under a load with the Rockwell hardness of 150K.

Description

technical field [0001] The invention belongs to the field of diamond film preparation, and in particular relates to a method for preparing a diamond film on a stainless steel surface with Cr / CrAlN as a transition layer, which has good bonding force and high hardness of the entire film. Background technique [0002] Diamond is an allotrope of carbon and the hardest natural substance in nature. In a diamond crystal each carbon atom is sp 3 The hybrid orbital forms covalent bonds with the other 4 carbon atoms to form a regular tetrahedron. The C–C bond in diamond is very strong, all valence electrons participate in the formation of covalent bonds, and there are no free electrons. This special structure endows diamond with excellent properties, such as high strength, high hardness, and good chemical stability. properties, high thermal conductivity and good biocompatibility. Stainless steel is an important metal material with good mechanical properties and good corrosion resis...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/02C23C14/35C23C14/16C23C14/06
CPCC23C14/0036C23C14/0641C23C14/165C23C14/352C23C16/0272C23C16/0281C23C16/271
Inventor 李晓李传星胡晓君陈成克蒋梅燕刘成吕枫
Owner ZHEJIANG UNIV OF TECH
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