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Quantum dot device backboard and manufacturing method thereof, and quantum dot device

A quantum dot device and quantum dot layer technology are applied to the quantum dot device backplane and the manufacturing method thereof and the field of quantum dot devices, and can solve the problems of QLED to be improved, loss, quantum dot falling off, etc.

Active Publication Date: 2019-12-31
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, fluorescent quantum dots of each color need to be patterned once separately, and the fluorescent quantum dots of different colors are patterned (that is, red, green, and blue light-emitting layers are introduced side by side in one pixel), and the pattern needs to be repeated many times. process, and quantum dots are easy to cause shedding and loss during the patterning process
[0003] Therefore, the current QLED related technologies still need to be improved

Method used

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  • Quantum dot device backboard and manufacturing method thereof, and quantum dot device
  • Quantum dot device backboard and manufacturing method thereof, and quantum dot device
  • Quantum dot device backboard and manufacturing method thereof, and quantum dot device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Example 1: Fabrication of a full-color display backplane

[0065] 1. Introduce the red quantum dot light-emitting layer in the red pixel area, the specific process is:

[0066] (1) Cleaning: Ultrasonic cleaning of ITO glass with isopropanol, water, and acetone, and UV treatment for 5 minutes.

[0067] (2) Spin-coated zinc oxide film: Add 4.5g of zinc nitrate dihydrate solid into a solvent containing 10mL of ethanolamine and n-butanol, spin-coat in air to form a film at a speed of 2000rpm, and heat it on a hot stage at 200°C to form a film.

[0068] (3) Introduction of silicon dioxide film: equip an ethanol solution of ethyl orthosilicate (0.5mL of orthosilicate, 4.5mL of ethanol), and add a small amount of ammonia water (0.1mL), spin-coat in the air to form a film, and the speed is 2500rpm , and placed at room temperature for 5 minutes (that is, the hydrolysis time of TEOS is 5 minutes). The thickness of the silicon dioxide film layer can be controlled at 0.8 nm by co...

Embodiment 2

[0082] Same as Example 1, the difference is that the silicon dioxide layer is 1.4 nm thick after being spin-coated and left at room temperature for 10 minutes.

Embodiment 3

[0084] Same as Example 1, the difference lies in that the silicon dioxide layer is left at room temperature for 20 minutes after being spin-coated, and the thickness of the silicon dioxide layer is 3.2 nm.

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PUM

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Abstract

The invention provides a quantum dot device backboard and a manufacturing method thereof, and a quantum dot device. The quantum dot device backboard comprises a substrate, a cathode arranged on a first surface of the substrate, an electron transmission layer arranged on a surface, far away from the substrate, of the cathode, a connecting layer which is arranged on the surface, far away from the substrate, of the electron transmission layer and is bonded with the electron transmission layer through chemical bonds, and a quantum dot layer which is arranged on the surface, far away from the substrate, of the connecting layer, and the quantum dot layer and the connecting layer are bonded through chemical bonds. The quantum dot device backboard is advantaged in that the quantum dot layer is combined to the electron transmission layer through the chemical bond effect by means of the connecting layer, the adhesive force of the quantum dot layer is greatly improved, the quantum dot layer is firm in combination and not prone to falling off, the good display effect is guaranteed, the processing yield is increased, and the cost is reduced.

Description

technical field [0001] The invention relates to the field of display technology, and in particular, relates to a quantum dot device backplane, a manufacturing method thereof, and a quantum dot device. Background technique [0002] With the emergence and development of new display technologies, the market's requirements for high-resolution display products continue to increase. Fluorescent quantum dots are an important inorganic nano-fluorescent material discovered in recent years. It has attracted more and more attention from academia and industry. At present, fluorescent quantum dots of each color need to be patterned once separately, and the fluorescent quantum dots of different colors are patterned (that is, red, green, and blue light-emitting layers are introduced side by side in one pixel), and the pattern needs to be repeated many times. In the process of patterning, quantum dots are easy to cause shedding and loss during the patterning process. [0003] Therefore, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56H10K99/00
CPCH10K71/15H10K71/12H10K50/16H10K71/40H10K71/164H10K50/115H10K30/865H10K71/00H10K71/811H10K2102/351
Inventor 张爱迪
Owner BOE TECH GRP CO LTD