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A kind of preparation method of highly graphitized ultrathin carbon film-coated sic nanowires

A nanowire and graphitization technology, which is applied in the field of preparation of highly graphitized ultra-thin carbon film-coated SiC nanowires, can solve problems such as reducing device performance stability, and achieve improved electrochemical performance, good repeatability, and improved ratio. The effect of capacitors

Active Publication Date: 2020-07-17
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the research on SiC nanocomposites mainly focuses on metal oxide systems and metal particles coated on the surface of particles. However, the intervention of this series of materials will reduce the performance stability of devices based on SiC structural units.

Method used

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  • A kind of preparation method of highly graphitized ultrathin carbon film-coated sic nanowires
  • A kind of preparation method of highly graphitized ultrathin carbon film-coated sic nanowires
  • A kind of preparation method of highly graphitized ultrathin carbon film-coated sic nanowires

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Experimental program
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Effect test

Embodiment 1

[0043] Soak N-doped SiC nanowires in 25% hydrofluoric acid aqueous solution for 15 minutes, and then N-doped SiC nanowires, Pt sheet electrodes, and carbon quantum dot aqueous solution (volume ratio of carbon quantum dots to aqueous solution is 0.30g: 100mL ) as the working electrode, counter electrode and electrolyte. Electrodeposited at 2.5V for 2.5h. After the deposition is completed, put it into a tube furnace after cleaning, and calcinate for 25 minutes at a temperature of 950°C under the protection of an argon atmosphere to realize the preparation of SiC nanowires coated with highly graphitized ultrathin carbon films.

Embodiment 2

[0045] Polysilazane was selected as the organic precursor, and it was thermally cross-linked and cured at 250°C for 25 min under the protection of Ar atmosphere. The cured solid was put into a nylon resin ball mill jar, and ball milled into powder. Weigh 280mg of polysilazane and 100mg of melamine powder and mix them uniformly and place them at the bottom of the graphite crucible. Cut carbon fiber cloth 7×7cm 2 Soak in 0.08mol / L nickel nitrate solution for 20 minutes, take it out and let it dry naturally, place the carbon fiber cloth as the substrate on the top of the graphite crucible, and place the graphite crucible in the atmosphere sintering furnace heated by graphite resistance, and the atmosphere furnace is first vacuumed to 10 -4 Pa, and then filled with Ar gas (99.99% purity) until the pressure was one atmosphere, and then the pressure was constant. First, the temperature is rapidly raised from room temperature to 1400°C at a rate of 28°C / min, then the temperature is...

Embodiment 3

[0048] Polysilazane was selected as the organic precursor, and thermal cross-linking and curing were carried out at 260 °C for 30 min under the protection of Ar atmosphere. The solid obtained by solidification is put into a nylon resin ball mill jar, and the ball mill is pulverized into powder. Weigh 300mg of polysilazane and 100mg of melamine powder and mix them evenly and place them at the bottom of the graphite crucible. Cut carbon fiber cloth 5×5cm 2 soaked in 0.05mol / L Co(NO) 3 In the solution for 10min, take it out and let it dry naturally. Carbon fiber cloth is placed on top of the graphite crucible as a substrate, and the graphite crucible is placed in an atmosphere sintering furnace heated by graphite resistance. The atmosphere furnace is first evacuated to 10 -4 Pa, and then filled with Ar gas (99.99% purity) until the pressure was ~0.11Mpa, after which the pressure was constant. Firstly, the temperature is rapidly raised from room temperature to 1450°C at a rat...

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Abstract

The invention belongs to the technical field of nano material preparation and relates to a preparation method of a highly graphitized ultrathin carbon film coated SiC nanowire. The preparation methodcomprises steps of putting a nitrogen-doped SiC nanowire into hydrofluoric acid aqueous solution for soaking for 10 to 20min; then respectively taking the nitrogen-doped SiC nanowire, a platinum sheetelectrode and carbon quantum dot aqueous solution as a working electrode, a counter electrode and electrolyte, depositing for 1.5-3h under the voltage of 2-3V, and calcining the deposited nitrogen-doped SiC nanowire for 20-40min at the temperature of 850-950 DEG C under the protection of inert gas.

Description

technical field [0001] The technical field of nanomaterial preparation of the present invention relates to a preparation method of highly graphitized ultrathin carbon film-coated SiC nanowires. Background technique [0002] As a third-generation semiconductor material, SiC has excellent physical and chemical properties such as wide band gap, high electron mobility, high thermal conductivity, and good corrosion resistance. It has strong stability under high frequency, high temperature, strong radiation and other conditions, and has unique application prospects in the fields of photoelectric and electromechanical sensors such as luminescence, field effect transistors, and electromechanical conversion. [0003] Due to its particularly stable performance in all aspects, SiC nanomaterials also exhibit excellent cycle stability when used in supercapacitors. However, the conductivity of SiC nanomaterials is poor, and SiC nanomaterials alone as supercapacitor electrodes cannot meet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/26H01G11/36H01G11/32H01G11/86
CPCH01G11/26H01G11/32H01G11/36H01G11/86Y02E60/13
Inventor 刘乔李笑笑王霖高凤梅杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY