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Method for preparing perovskite ferroelectric film through non-heat-treatment magnetron sputtering

A ferroelectric thin film, magnetron sputtering technology, applied in sputtering coating, ion implantation coating, metal material coating process and other directions, can solve the problems of complex process and high cost, achieve simple preparation method and wide growth conditions Effect

Active Publication Date: 2020-01-10
AUDIOWELL ELECTRONICS GUANGDONG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is aimed at problems such as high cost and complex process in the current ferroelectric thin film preparation process, using 0.5Ba(Zr 0.2 Ti 0.8 )O 3 -0.5(Ba 0.7 Ca 0.3 )TiO 3 (hereinafter referred to as BZT-BCT) ferroelectric materials provide a method for preparing perovskite ferroelectric thin films by magnetron sputtering without heat treatment; this preparation method realizes the use of radio frequency magnetron sputtering without heating the substrate High-quality BZT-BCT ferroelectric polycrystalline thin films grown by the method

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  • Method for preparing perovskite ferroelectric film through non-heat-treatment magnetron sputtering
  • Method for preparing perovskite ferroelectric film through non-heat-treatment magnetron sputtering
  • Method for preparing perovskite ferroelectric film through non-heat-treatment magnetron sputtering

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Embodiment 1-5

[0026] A method for preparing a perovskite ferroelectric film by magnetron sputtering without heat treatment, the specific steps are as follows:

[0027] (1) Ba(NO 3 ) 2 , Zr(NO 3 ) 4 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O, Ti(OC 4 h 9 ) 4 Prepare BZT-BCT gel as a raw material, then calculate and weigh according to the molar ratio of 17:2:3:18, and weigh the citric acid that is 1.5:1 with the metal cation molar ratio;

[0028] (2) The citric acid in the step (1) is prepared into an aqueous solution with a mass concentration of 20%, then titrated with ammonia water to alkalinity, and then mixed with 10% Ti(OC 4 h 9 ) 4 Alcohol solutions were mixed and stirred for 60 minutes in a water bath at 80°C to obtain a transparent and clear solution;

[0029] (3) Zr(NO 3 ) 4 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O and Ba(NO 3 ) 2 Mix and prepare an inorganic salt solution with a mass concentration of 5%.

[0030] (4) Evenly mix the clear solution in step (2) with the inorganic salt soluti...

Embodiment 6-10

[0036] A method for preparing a perovskite ferroelectric film by magnetron sputtering without heat treatment, the specific steps are as follows:

[0037] (1) Ba(NO 3 ) 2 , Zr(NO 3 ) 4 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O, Ti(OC 4 h 9 ) 4 Prepare BZT-BCT gel as a raw material, then calculate and weigh according to the molar ratio of 17:2:3:18, and weigh the citric acid that is 1.5:1 with the metal cation molar ratio;

[0038] (2) The citric acid in the step (1) is prepared into an aqueous solution with a mass concentration of 20%, then titrated with ammonia water to alkalinity, and then mixed with 10% Ti(OC 4 h 9 ) 4 Alcohol solutions were mixed and stirred for 60 minutes in a water bath at 80°C to obtain a transparent and clear solution;

[0039] (3) Zr(NO 3 ) 4 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O and Ba(NO 3 )2 Mix and prepare an inorganic salt solution with a mass concentration of 5%.

[0040] (4) Evenly mix the clear solution in step (2) with the inorganic salt solution...

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Abstract

The invention provides a method for preparing a perovskite ferroelectric film through non-heat-treatment magnetron sputtering. The method comprises the steps that a sol-gel method is used for preparing BZT-BCT gel, the gel is calcinated at the temperature of 600 to 800 DEG C to obtain precursor powder, the precursor powder and a polyvinyl alcohol solution are mixed and then are subjected to granulation, target pressing and glue discharging, and through six-hour sintering at the temperature of 800 to 1000 DEG C, a target needed by magnetron sputtering can be obtained. Through the single targetmagnetron sputtering method, a composite perovskite ferroelectric poly-film with quite good crystallinity grows on a non-heated Si substrate, and a growth method which is simple in process, low in energy consumption and wide in production condition is provided for ferroelectric film growth.

Description

technical field [0001] The invention relates to the technical field of preparation of perovskite ferroelectric thin film materials, in particular to a method for preparing perovskite ferroelectric thin films by magnetron sputtering without heat treatment. Background technique [0002] Perovskite ferroelectric materials have become indispensable materials in electronic devices due to their high-voltage, dielectric, and thermoelectric properties. Compared with traditional ferroelectric ceramics, in addition to inheriting the basic properties of bulk materials, ferroelectric thin films also have the characteristics of small size, light weight, easy driving, and convenient integration with semiconductor processes. Today, as electronic devices are increasingly pursuing small size, multi-function, and low energy consumption, the preparation process of ferroelectric thin film materials urgently needs to be developed. [0003] The methods currently used to prepare ferroelectric thi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/088C23C14/3414C23C14/35
Inventor 薛德胜杨洋
Owner AUDIOWELL ELECTRONICS GUANGDONG
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