A kind of method for preparing easily peelable carbon film on sic substrate
An easy-to-peel, carbon-film technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve problems such as complicated process and difficult to peel off
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Embodiment 1
[0034] A scheme for preparing an easy-to-peel carbon film on a SiC substrate, comprising the following steps:
[0035] Step S1, place the cleaned positive oriented 4H insulating SiC substrate into the reaction chamber of the purged SiC chemical vapor deposition equipment, and vacuumize the reaction chamber to a degree of 5×10 -4 mbar;
[0036] Step S2, pass high-purity hydrogen and auxiliary gas hydrogen chloride into the reaction chamber, raise the pressure of the reaction chamber to 50mbar, and slowly raise the temperature to 1650°C, keep the pressure and temperature constant for 5 minutes, perform surface treatment on the substrate, remove For mechanical damage on the substrate surface, the flow rate of the auxiliary gas hydrogen chloride is 5 sccm;
[0037] Step S3, lower the temperature to 800°C, close the hydrogen valve, open the argon valve, replace all the hydrogen in the reaction chamber with argon and slowly raise the pressure of the reaction chamber to 300mbar, and...
Embodiment 2
[0047] A scheme for preparing an easy-to-peel carbon film on a SiC substrate, comprising the following steps:
[0048] Step S1, place the cleaned positive oriented 4H insulating SiC substrate into the reaction chamber of the purged SiC chemical vapor deposition equipment, and vacuumize the reaction chamber to a degree of 5×10 -4 mbar;
[0049] Step S2, pass high-purity hydrogen and auxiliary gas silane into the reaction chamber, raise the pressure of the reaction chamber to 80mbar, and slowly raise the temperature to 1600°C, keep the pressure and temperature constant for 8 minutes, perform surface treatment on the substrate, remove For mechanical damage on the substrate surface, the flow rate of the auxiliary gas silane is 3 sccm;
[0050]Step S3, lower the temperature to 700°C, close the hydrogen valve, open the argon valve, replace all the hydrogen in the reaction chamber with argon and slowly raise the pressure of the reaction chamber to 200mbar, and slowly raise the tempe...
Embodiment 3
[0059] A scheme for preparing an easy-to-peel carbon film on a SiC substrate, comprising the following steps:
[0060] Step S1, place the cleaned positive oriented 4H insulating SiC substrate into the reaction chamber of the purged SiC chemical vapor deposition equipment, and vacuumize the reaction chamber to a degree of 8×10 -4 mbar;
[0061] Step S2, pass high-purity hydrogen and auxiliary gas silane into the reaction chamber, raise the pressure of the reaction chamber to 100mbar, and slowly raise the temperature to 1680°C, keep the pressure and temperature unchanged for 10 minutes, perform surface treatment on the substrate, remove Mechanical damage to the substrate surface, the flow rate of the auxiliary gas propane is 4 sccm;
[0062] Step S3, lower the temperature to 750°C, close the hydrogen valve, open the argon valve, replace all the hydrogen in the reaction chamber with argon and slowly raise the pressure of the reaction chamber to 600mbar, and slowly raise the temp...
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