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Method for post-cleaning silicon wafer by utilizing CMP equipment

A post-cleaning, silicon wafer technology, applied in metal processing equipment, grinding/polishing equipment, control of workpiece feed movement, etc., can solve the problems of complex process, cumbersome operation, low cleaning efficiency, etc. Simple and efficient cleaning

Active Publication Date: 2020-01-21
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this way, the problems of complex process, cumbersome operation and low cleaning efficiency are solved.

Method used

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  • Method for post-cleaning silicon wafer by utilizing CMP equipment
  • Method for post-cleaning silicon wafer by utilizing CMP equipment
  • Method for post-cleaning silicon wafer by utilizing CMP equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Use CMP equipment for post-cleaning of silicon wafers: first, perform normal polishing process on silicon wafers with CMP machine, rinse with deionized water, then suck the silicon wafers on the polishing head, replace the polishing disc, and trim the polishing pad for 1 minute.

[0037] 1. Configure the cleaning solution, and take the volume ratio of FA / O type I surfactant: FA / O type I chelating agent: 0.5mol / L ammonium persulfate solution: deionized water = 100:20:1:2500, prepare 5L , added to the beaker in turn, stirred with a stirrer for 5 minutes, and then the configured cleaning solution was passed into the spare liquid inlet pipeline of the polishing machine.

[0038] 2. Adjust the process parameters during CMP cleaning. The working pressure of the polishing machine is 0.5psi and the back pressure is 0.5psi when the cleaning liquid is cleaning; the polishing head speed of the polishing machine is 60rpm, the polishing pad speed is 60rpm, and the cleaning liquid flo...

Embodiment 2

[0045] Use CMP equipment for post-cleaning of silicon wafers: first, perform normal polishing process on silicon wafers with CMP machine, rinse with deionized water, then suck the silicon wafers on the polishing head, replace the polishing disc, and trim the polishing pad for 1 minute.

[0046] 1. Configure the cleaning solution, take the volume ratio FA / OⅠtype surfactant: FA / OⅠtype chelating agent: hydrogen peroxide (concentration is 30%): deionized water = 50:20:1:2000, prepare 5L, and add in order Put it into the beaker, stir it with a stirrer for 5 minutes, and then pass the prepared cleaning solution into the spare liquid inlet pipeline of the polishing machine.

[0047]2. Adjust the process parameters during CMP cleaning. The working pressure of the polishing machine is 0.8psi and the back pressure is 0.8psi when the cleaning liquid is cleaning; the polishing head speed of the polishing machine is 80rpm, the polishing pad speed is 85rpm, and the cleaning liquid flow rate ...

Embodiment 3

[0052] Use CMP equipment for post-cleaning of silicon wafers: first, perform normal polishing process on silicon wafers with CMP machine, rinse with deionized water, then suck the silicon wafers on the polishing head, replace the polishing disc, and trim the polishing pad for 1 minute.

[0053] 1. Configure the cleaning solution, and take the volume ratio of FA / O type I surfactant: FA / O type I chelating agent: 0.5mol / L ammonium persulfate solution: deionized water = 80:20:1:2200, prepare 5L , added to the beaker in turn, stirred with a stirrer for 5 minutes, and then the configured cleaning solution was passed into the spare liquid inlet pipeline of the polishing machine.

[0054] 2. Adjust the process parameters during CMP cleaning. The working pressure of the polishing machine is 0.6psi and the back pressure is 0.6psi when the cleaning liquid is cleaning; the polishing head speed of the polishing machine is 70rpm, the polishing pad speed is 70rpm, and the cleaning liquid flow...

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Abstract

The invention discloses a method for post-cleaning a silicon wafer by utilizing CMP equipment. The method comprises the following steps: introducing cleaning liquid into the CMP equipment, after a chemical mechanical polishing machine finishes polishing work of a conventional silicon wafer polishing process, replacing a polishing disc, opening a cleaning liquid pipeline, closing a polishing liquidpipeline, and entering into a cleaning process; after the cleaning process is finished, closing the cleaning liquid pipeline, opening a deionized water pipeline, introducing deionized water, and performing deionized cleaning; and finally taking out the silicon wafer, and blowing nitrogen to dry 15-30s, and finishing the polishing and cleaning processes. The cleaning method has simple process andno secondary pollution, achieves integration of polishing and cleaning, reduces investment of special cleaning equipment and improves cleaning efficiency.

Description

Technical field: [0001] The invention relates to a method for cleaning the surface of a silicon wafer after chemical mechanical polishing, in particular using CMP equipment for post-cleaning. Background technique: [0002] In the semiconductor industry, particle contamination on the surface of silicon single wafers creates a nail model during the diffusion of P-N junctions, resulting in low breakdown, pipeline breakdown, surface resistance, photolithographic pinholes, etc., which seriously affect the quality and reduce the yield. At the same time, heavy metal impurities such as sodium, magnesium, and copper will reduce the minority carrier lifetime of the silicon wafer, increase the leakage current, cause soft breakdown of the P-N junction, and change the material resistivity, seriously affecting the reliability and stability of the device. The increase of RMS (micro-roughness) will reduce the integrity of the gate oxide layer of the device, thereby affecting its breakdown f...

Claims

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Application Information

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IPC IPC(8): B24B37/04B24B49/00H01L21/02
CPCB24B37/042B24B49/006H01L21/02057
Inventor 檀柏梅高宝红杨柳殷达马腾达孙晓琴王亚珍
Owner HEBEI UNIV OF TECH
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