High quality diamond growth method and system

Abstract

The invention relates to a high-quality diamond growth method and system. The high-quality diamond growth method comprises the following steps: S1, pretreating the surface of a seed crystal, putting the pretreated seed crystal into a growth bin, and introducing hydrogen and oxygen to etch the surface of the seed crystal for 15-60 minutes; s2, introducing a carbon source to grow diamond; s3, judging whether the growth time reaches the first time or not, and if so, executing a step S4; and if not, executing a step S5; s4, stopping introducing the carbon source, introducing oxygen to etch for 10-30 minutes, and executing the step S2; s5, detecting whether impurities appear on the surface of the diamond or not, if yes, executing impurity treatment operation, and executing the step S2 after 10-30 min; and if not, executing the step S3. According to the method, a high-quality diamond sheet does not need to be selected as the seed crystal, the cost of the seed crystal is reduced, newly growndiamonds grow in a layered manner, the surface defects of the diamonds are repaired, the number of the surface defects is reduced, meanwhile, the growth rate of the diamonds is not reduced, and the high growth rate is still maintained and is not lower than 8[mu]m / h.

Description

technical field [0001] The invention relates to the field of diamond growth, in particular to a high-quality diamond growth method and system. Background technique [0002] High-quality diamond has a high band gap and a wide light transmission spectrum. At the same time, its ultra-high hardness and thermal conductivity, excellent insulation, and excellent physical and chemical properties such as acid resistance, heat resistance, and radiation resistance can be used in precision machinery. Processing, optical windows, gemstones, MEMS (MEMS, Micro-Electro-Mechanical System, Micro-Electro-Mechanical System), chips and other fields. However, high-quality natural diamond reserves are limited, so people have developed a variety of synthetic diamond methods, such as high temperature and high pressure method, hot wire chemical vapor deposition method. Among them, MPCVD (Microwave plasma chemical vapor deposition, microwave plasma chemical vapor deposition method) synthetic diamond ...

AI Technical Summary

Problems solved by technology

As we all know, diamond can be synthesized by introducing a certain amount of carbon source and controlling appropriate process parameters, but the appearance of surface defects is still very frequent

Therefore, the current mainstream method is to select higher quality diamond as the seed crystal, but the cost is extremely expensive, and it is still impossible to completely avoid the generation of surface defects, such as twin polycrystals, point defects, line defects, etc. The generation of these defects is extremely serious. Hindered the high-end application of diamond

[0004] The patent document whose invention number is 02826062.7 discloses a device and a method for producing diamond, and the CH 4 / H 2 / N 2 In the case of , while adding a certain proportion of O 2 , can reduce the growth temperature, improve the growth quality, but significantly reduce the growth rate

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