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MEMS structure and processing method thereof, pyroelectric sensor and infrared detector

A processing method and heat-sensitive technology, applied in the field of MEMS technology and infrared detection, can solve the problems of inapplicability, large noise equivalent temperature difference, and large influence on the overall performance of the detector.

Inactive Publication Date: 2020-02-21
RUZHOU YUFENG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, most of the MEMS structures used in existing detectors are made of vanadium oxide, etc., which are generally only supported by anchor columns in terms of structure. This type of MEMS structure has problems such as large noise equivalent temperature difference. The overall performance of the detector is greatly affected, so it is not suitable for detectors such as uncooled infrared detectors

Method used

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  • MEMS structure and processing method thereof, pyroelectric sensor and infrared detector
  • MEMS structure and processing method thereof, pyroelectric sensor and infrared detector
  • MEMS structure and processing method thereof, pyroelectric sensor and infrared detector

Examples

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Embodiment 1

[0038] Refer to attached Figure 1~2 , this embodiment provides a MEMS structure, which includes a substrate 1 provided with a readout integrated circuit, a thermally sensitive layer 2 suspended on the upper side of the substrate 1, and a support structure 3 for supporting the thermally sensitive layer 2; The heat-sensitive layer 2 described above is a ferroelectric film of lead lanthanum titanate; the support structure is electrically connected to the substrate 1 through four groups of anchor columns 4, and an optical resonance is formed between the support structure 3 and the substrate 1 Cavity 7 ; the support structure 3 includes a first silicon carbide layer 31 , an electrode layer 32 and a second silicon carbide layer 33 sequentially from bottom to top.

[0039] Wherein, the electrode layer 32 is an interdigitated electrode structure, and the anchor column 4 is made of tungsten; the outer periphery of the anchor column 4 is provided with a silicon oxide layer 5, which can...

Embodiment 2

[0041] Refer to attached Figure 1~2 , this embodiment provides a method for processing the MEMS structure provided in the above-mentioned embodiment 1, which includes the following steps:

[0042] (1) Spin-coat a polyimide film with a thickness of 1 μm on the substrate 1 as a sacrificial layer, and deposit a silicon carbide protective film on the sacrificial layer by chemical vapor deposition to protect the polyimide The role of the membrane.

[0043] (2) Etching and drilling the four corners of the sacrificial layer and the silicon carbide protective film to obtain four groups of first holes.

[0044] (3) Deposit silicon oxide in the above-mentioned first channel by chemical vapor deposition, and planarize the sacrificial layer for the first time, and remove the silicon carbide protective film on the sacrificial layer.

[0045] (4) Deposit a silicon oxynitride protective film with a thickness of 40 nm on the sacrificial layer after the first planarization by chemical vapor...

Embodiment 3

[0054] Refer to attached Figure 1~2 , this embodiment provides a method for processing the MEMS structure provided in the above-mentioned embodiment 1, which includes the following steps:

[0055] (1) Spin-coat a polyimide film with a thickness of 3 μm on the substrate 1 as a sacrificial layer, and deposit a silicon carbide protective film on the sacrificial layer by chemical vapor deposition to protect the polyimide The role of the membrane.

[0056] (2) Etching and drilling the four corners of the sacrificial layer and the silicon carbide protective film to obtain four groups of first holes.

[0057] (3) Deposit silicon oxide in the above-mentioned first channel by chemical vapor deposition, and planarize the sacrificial layer for the first time, and remove the silicon carbide protective film on the sacrificial layer.

[0058] (4) Deposit a silicon oxynitride protective film with a thickness of 40 nm on the sacrificial layer after the first planarization by chemical vapor d...

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Abstract

The invention discloses an MEMS (Micro-ElectroMechanical Systems) structure and a processing method thereof, a pyroelectric sensor and an infrared detector, and belongs to the technical field of MEMStechnology and infrared detection. The MEMS structure includes a substrate provided with a read-out integrated circuit, and includes: a thermal sensitive layer which is suspended on one side of the substrate and is a lanthanum lead titanate ferroelectric film; and a supporting structure used for supporting the thermal sensitive layer, wherein the supporting structure is connected with the substrate through a plurality of groups of anchor posts, an optical resonant cavity is formed between the supporting structure and the substrate, the supporting structure sequentially comprises a first silicon carbide layer, an electrode layer and a second silicon carbide layer, and the electrode layer is a titanium film and / or a titanium nitride film. The MEMS structure of the invention has the beneficial effects that: the lanthanum lead titanate ferroelectric film is used as the thermal sensitive layer, and the thermal sensitive layer is suspended on one side of the substrate through the supportingstructure, thus the optical absorption characteristic of the MEMS structure can be improved, and the noise equivalent temperature difference of the MEMS structure can be reduced.

Description

technical field [0001] The invention relates to the fields of MEMS technology and infrared detection technology, in particular to a MEMS structure and a processing method thereof, a pyroelectric sensor, and an infrared detector. Background technique [0002] Micro-Electro-Mechanical System (MEMS), also called micro-electro-mechanical system, micro-system, micro-machine, can be used to form a pixel array or a blind cell structure of a detector such as an uncooled infrared detector. [0003] At present, most of the MEMS structures used in existing detectors are made of vanadium oxide, etc., which are generally only supported by anchor columns in terms of structure. This type of MEMS structure has problems such as large noise equivalent temperature difference. The overall performance of the detector is greatly affected, so it is not suitable for detectors such as uncooled infrared detectors. Contents of the invention [0004] The purpose of the embodiments of the present inv...

Claims

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Application Information

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IPC IPC(8): G01J5/34B81B7/02B81C1/00
CPCB81B7/02B81C1/00444B81C1/00642G01J5/34
Inventor 石少伟武军伟梁自克
Owner RUZHOU YUFENG ELECTRONICS CO LTD
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