Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof

A diamond layer and substrate layer technology, applied in the field of microelectronics, can solve the problems of affecting the heat dissipation capability of semiconductor devices, limiting the application of semiconductor devices, poor thermal conductivity of epitaxial substrates, etc., so as to reduce manufacturing complexity and cost, and avoid device failure. , The effect of improving heat dissipation efficiency
CN110828293AInactive Publication Date: 2020-02-21XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2020-02-21
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a semiconductor device based on a SiC / diamond composite substrate layer and a preparation method thereof. The preparation method of the semiconductor device comprises steps that a composite substrate layer is prepared, and the composite substrate layer comprises a SiC substrate layer and a diamond layer; an AlN nucleating layer is grown on the Si surface of the SiC substrate layer by using a chemical vapor deposition method; a GaN buffer layer is grown on the AlN nucleating layer by using a chemical vapor deposition method; an AlGaN barrier layer is grown on the GaN buffer layer by using a chemical vapor deposition method. The preparation method is advantaged in that the SiC substrate layer with high quality and the diamond layer with high thermal conductivity arecombined to form the SiC / diamond composite substrate layer structure, and high thermal conductivity of the diamond layer is utilized to improve heat dissipation capability of growing a high-power nitride semiconductor material purely on the SiC substrate layer.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and in particular relates to a semiconductor device based on a SiC / diamond composite substrate layer and a preparation method thereof. Background technique

[0002] Semiconductor devices are important basic materials for making transistors, integrated circuits, power electronic devices, and optoelectronic devices. The first-generation elemental semiconductor devices represented by Si and Ge and the second-generation compound semiconductor devices represented by GaAs and InP have laid an important foundation for the development and production of high-tech products in modern society. However, with the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices.

[0003] Compared with the first-generation and second-generation semiconductor devices, the third-generatio...

Claims

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