Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof

Abstract

The invention relates to a semiconductor device based on a SiC / diamond composite substrate layer and a preparation method thereof. The preparation method of the semiconductor device comprises steps that a composite substrate layer is prepared, and the composite substrate layer comprises a SiC substrate layer and a diamond layer; an AlN nucleating layer is grown on the Si surface of the SiC substrate layer by using a chemical vapor deposition method; a GaN buffer layer is grown on the AlN nucleating layer by using a chemical vapor deposition method; an AlGaN barrier layer is grown on the GaN buffer layer by using a chemical vapor deposition method. The preparation method is advantaged in that the SiC substrate layer with high quality and the diamond layer with high thermal conductivity arecombined to form the SiC / diamond composite substrate layer structure, and high thermal conductivity of the diamond layer is utilized to improve heat dissipation capability of growing a high-power nitride semiconductor material purely on the SiC substrate layer.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a semiconductor device based on a SiC / diamond composite substrate layer and a preparation method thereof. Background technique [0002] Semiconductor devices are important basic materials for making transistors, integrated circuits, power electronic devices, and optoelectronic devices. The first-generation elemental semiconductor devices represented by Si and Ge and the second-generation compound semiconductor devices represented by GaAs and InP have laid an important foundation for the development and production of high-tech products in modern society. However, with the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices. [0003] Compared with the first-generation and second-generation semiconductor devices, the third-generatio...

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Problems solved by technology

[0004] However, due to the poor thermal conductivity of the nitride semiconductor material epitaxial substrate, it seriously affects the heat dissipation capability of semiconductor devices and limits the application of semiconductor devices in high-power applications.

However, the nitride material is transferred to the diamond substrate by bonding, which enhances the heat dissipation of the substrate. On the one hand, the process is complicated, the cost is high, and the yield is low. On the other hand, the bonded adhesion layer will also introduce new Thermal resistance, resulting in poor substrate heat dissipation

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