Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof

A diamond layer and substrate layer technology, applied in the field of microelectronics, can solve the problems of affecting the heat dissipation capability of semiconductor devices, limiting the application of semiconductor devices, poor thermal conductivity of epitaxial substrates, etc., so as to reduce manufacturing complexity and cost, and avoid device failure. , The effect of improving heat dissipation efficiency

Inactive Publication Date: 2020-02-21
XIDIAN UNIV
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the poor thermal conductivity of the nitride semiconductor material epitaxial substrate, it seriously affects the heat dissipation capability of semiconductor devices and limits the application of semiconductor devices in high-power applications.
However, the nitride material is transferre

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof
  • Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof
  • Semiconductor device based on SiC/diamond composite substrate layer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] See figure 1 , figure 1 It is a schematic flowchart of a method for preparing a semiconductor device based on a SiC / diamond composite substrate layer provided by an embodiment of the present invention. The preparation method comprises the following steps:

[0038] Step 1, preparing a composite substrate layer, wherein the composite substrate layer includes a SiC substrate layer and a diamond layer;

[0039] Step 1.1, selecting the SiC substrate layer;

[0040] Step 1.2, growing a diamond layer on the C-face of the SiC substrate layer;

[0041] See Figure 2a , Figure 2a A flow chart of a manufacturing process of a semiconductor device based on a SiC / diamond composite substrate layer provided by an embodiment of the present invention. Specifically, the selected SiC substrate layer is put into a Microwave Plasma Chemical Vapor Deposition (MPCVD) reaction chamber, a mixed gas of hydrogen and methane is introduced into the reaction chamber, and the SiC substrate laye...

Embodiment 2

[0071] See Figure 2a-2d , Figure 2a-2d A flow chart of a manufacturing process of a semiconductor device based on a SiC / diamond composite substrate layer provided by an embodiment of the present invention. This preparation method comprises the steps:

[0072] Step 1, preparing a composite substrate layer, wherein the composite substrate layer includes a SiC substrate layer 101 and a diamond layer 102;

[0073] Step 1.1, selecting the SiC substrate layer 101;

[0074] Preferably, the SiC substrate layer 101 with a thickness of 0.3-1 mm is selected as the initial material.

[0075] Step 1.2, growing a diamond layer 102 on the C-face of the SiC substrate layer 101;

[0076] see you again Figure 2a , grow a diamond layer 102 on the C-plane of the SiC substrate layer 101 . Specifically, the selected SiC substrate layer 101 is put into the MPCVD reaction chamber, and a mixed gas of hydrogen and methane is introduced into the MPCVD reaction chamber;

[0077] The process con...

Embodiment 3

[0106] See Figure 2a-2d , Figure 2a-2d A flow chart of a manufacturing process of a semiconductor device based on a SiC / diamond composite substrate layer provided by an embodiment of the present invention. This preparation method comprises the steps:

[0107] Step 1, preparing a composite substrate layer, wherein the composite substrate layer includes a SiC substrate layer 101 and a diamond layer 102;

[0108] Step 1.1, selecting the SiC substrate layer 101;

[0109] Preferably, the SiC substrate layer 101 with a thickness of 0.3-1 mm is selected as the initial material.

[0110] Step 1.2, growing a diamond layer 102 on the C-face of the SiC substrate layer 101;

[0111] see you again Figure 2a , grow a diamond layer 102 on the C-plane of the SiC substrate layer 101 . Specifically, the selected SiC substrate layer 101 is put into the MPCVD reaction chamber, and a mixed gas of hydrogen and methane is introduced into the MPCVD reaction chamber;

[0112] The process con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a semiconductor device based on a SiC/diamond composite substrate layer and a preparation method thereof. The preparation method of the semiconductor device comprises steps that a composite substrate layer is prepared, and the composite substrate layer comprises a SiC substrate layer and a diamond layer; an AlN nucleating layer is grown on the Si surface of the SiC substrate layer by using a chemical vapor deposition method; a GaN buffer layer is grown on the AlN nucleating layer by using a chemical vapor deposition method; an AlGaN barrier layer is grown on the GaN buffer layer by using a chemical vapor deposition method. The preparation method is advantaged in that the SiC substrate layer with high quality and the diamond layer with high thermal conductivity arecombined to form the SiC/diamond composite substrate layer structure, and high thermal conductivity of the diamond layer is utilized to improve heat dissipation capability of growing a high-power nitride semiconductor material purely on the SiC substrate layer.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a semiconductor device based on a SiC / diamond composite substrate layer and a preparation method thereof. Background technique [0002] Semiconductor devices are important basic materials for making transistors, integrated circuits, power electronic devices, and optoelectronic devices. The first-generation elemental semiconductor devices represented by Si and Ge and the second-generation compound semiconductor devices represented by GaAs and InP have laid an important foundation for the development and production of high-tech products in modern society. However, with the improvement of technology level, the existing first and second generation semiconductor materials can no longer meet the needs of higher frequency and higher power electronic devices. [0003] Compared with the first-generation and second-generation semiconductor devices, the third-generatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02H01L23/373
CPCH01L21/02378H01L21/0254H01L23/3732
Inventor 任泽阳张雅超张进成张金风林志宇袁冠生郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap