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Dual-frequency Faraday semiconductor lase and implementation method thereof

A semiconductor and laser technology, used in lasers, laser parts, phonon exciters, etc., can solve problems such as status ambiguity, achieve good immunity, and achieve the effect of tunability

Active Publication Date: 2020-02-28
浙江法拉第激光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently, many applications are looking for new laser devices, the concept of multi-wavelength lasers has been around since the early days of lasers, but its place in the laser field is still quite vague

Method used

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  • Dual-frequency Faraday semiconductor lase and implementation method thereof
  • Dual-frequency Faraday semiconductor lase and implementation method thereof
  • Dual-frequency Faraday semiconductor lase and implementation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Cesium atom 852nm dual-frequency Faraday semiconductor laser such as figure 1 As shown, it includes a laser diode 1, a collimating lens 2, a first polarizing beam splitting prism 3, a cylindrical cesium atom gas cell 4 with a length of 3 cm and a diameter of 1.5 cm, a second polarizing beam splitting prism 6, The laser cavity mirror 7 and the piezoelectric ceramics 8 arranged on the laser cavity mirror 7, wherein a permanent magnet 5 is arranged outside the cesium atom gas chamber, and the cesium atom gas chamber 4, the permanent magnet 5 and the polarization beam splitter prisms on both sides constitute the cesium atom Faraday atomic filter. The output light end of the laser diode 1 is coated with an anti-reflection coating, and the other side is coated with a high-reflection coating, and the first and second polarization beam splitters are placed in an orthogonal relationship.

[0036] When working, the laser diode 1 coated with an anti-reflection film emits a horizo...

Embodiment 2

[0047] Such as figure 2 The shown cesium atom 852nm dual-frequency Faraday semiconductor laser is used to illustrate another positional relationship between the first and second polarization beam splitters.

[0048] What is different from Embodiment 1 is that the setting direction of the laser diode is changed so that its output light is a vertically polarized coherent light beam, and the setting direction of the first polarizing beam splitter is changed with the laser diode (in order to keep the second polarizing beam splitting prism and Orthogonality, the placement angle of the second polarization beam splitter also changes accordingly).

[0049] In this way, the vertically polarized coherent beam emitted by the laser diode 1 coated with anti-reflection film becomes vertically polarized light after being collimated by the collimator lens, so that after the vertically polarized light is incident on the first polarization beam splitter prism, the output is still vertically po...

Embodiment 3

[0051] A dual-frequency Faraday semiconductor laser with the same structure and positional relationship as in Example 1, the difference is that the cesium atom gas chamber is filled with 5 Torr argon as a buffer gas, and its transmission spectrum is verified under the conditions of a magnetic field of 500-700 Gauss and a temperature of 43-55°C Such as Figure 7 As shown, it is confirmed that a stable dual-frequency laser output can also be obtained.

[0052] The above embodiment shows that the frequency control unit used in the cesium atom 852nm dual-frequency Faraday semiconductor laser is a cesium atom 852nm Faraday anomalous dispersion atomic filter comprising two transmission peaks at the ground state F=3 transition and the ground state F=4 transition place. The invention uses this innovative structure and principle for the first time to realize a dual-wavelength semiconductor laser, which is fundamentally different from the existing dual-wavelength laser wavelength.

[0...

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Abstract

The invention provides a dual-frequency Faraday semiconductor laser which comprises a laser diode (1), a collimating lens (2), a Faraday atomic filter and a laser cavity mirror (7).The Faraday atomicfilter comprises a first polarization splitting prism (3), an alkali metal atomic gas chamber (4) and a second polarization splitting prism (5). The output light of the laser diode (1) is incident into the alkali metal atom gas chamber (4) and then two laser modes are selected. The angle between the laser cavity mirror (7) and the incident light is adjusted so that the reflected light of the lasercavity mirror (7) returns to the semiconductor laser diode (1), oscillates in the resonant cavity and amplifies to exceed the laser oscillation threshold so as to output dual-frequency laser light atthe first polarization splitting prism or the second polarization splitting prism. The tunability of the output frequency of the dual-frequency semiconductor laser can be realized by changing the temperature and magnetic field conditions of the atomic gas chamber, and the transmission spectrum contains two stable transmission peaks with similar transmittance so as to work stably for a long time.

Description

【Technical field】 [0001] The invention belongs to the technical field of semiconductor lasers, and in particular relates to a dual-wavelength semiconductor laser realized by frequency selection of a Faraday atomic filter. 【Background technique】 [0002] A dual wavelength laser is a laser capable of producing two laser wavelengths in one device. Dual-wavelength lasers with widely spaced wavelengths can serve dual purposes in a single device, resulting in increased cost-effectiveness, efficiency, and versatility. [0003] Dual-wavelength lasers are widely used in many fields, such as ultrafast optical communication, wavelength division multiplexing, and terahertz radiation generation. Traditional dual-wavelength lasers are mainly based on fiber lasers and solid-state lasers. While fiber lasers have attractive properties such as narrow linewidth and low noise, they often require the use of filtering elements such as distributed Bragg mirrors to select lasing modes. Consequen...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/0941H01S3/10H01S3/105H01S3/106H01S3/227
CPCH01S3/0941H01S3/10061H01S3/1053H01S3/1066H01S3/227
Inventor 陈景标常鹏媛洪叶龙
Owner 浙江法拉第激光科技有限公司
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