Preparation method of carbon nanotube composite metal paste

A carbon nanotube composite, carbon nanotube technology, applied in cable/conductor manufacturing, conductive materials dispersed in non-conductive inorganic materials, electrical components, etc., can solve the problem of poor shear strength, thermal conductivity, electrical conductivity, etc. problem, to achieve the effect of improving thermal conductivity and improving overall reliability performance

Inactive Publication Date: 2020-03-17
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Application Information

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Problems solved by technology

[0004] In order to solve the technical problems of low thermal conductivity and electrical conductivity and poor shear strength of the existing nano-copper paste after sintering, the present invention proposes a method for preparing a carbon nanotube composite metal paste, comprising:

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment 1

[0029] This embodiment provides a method for preparing a carbon nanotube composite metal paste.

[0030] Step 1: adopt sol-gel method, magnetron sputtering method, vacuum evaporation method, chemical vapor deposition method and wet chemical plating method to form a layer of metal tightly combined with it on the surface of carbon nanotubes, and prepare metal surface modified carbon For nanotubes, the type of metal used for metal surface modification includes one or more of copper, nickel, zinc, manganese, iron, and silver. Carbon nanotubes are single-walled carbon nanotubes and multi-walled carbon nanotubes or a mixture of both in any proportion

[0031] Step 2: the carbon nanotube of metal surface modification is mixed with metal paste to prepare the carbon nanotube composite paste of metal surface modification, below is example with copper paste, the preparation method of the carbon nanotube composite metal paste of metal surface modification There are 3 types:

[0032] 1. ...

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Abstract

The invention discloses a preparation method of carbon nanotube composite metal paste. The preparation method comprises the following steps: S1, preparing a carbon nanotube subjected to first metal surface modification; S2, mixing the first metal surface modified carbon nano tube with metal powder and an organic carrier to form carbon nano metal paste; wherein the mass mixing ratio of the carbon nano tube to the metal powder ranges from 1: 59 to 1: 19, and the mass mixing ratio of the first metal surface modified carbon nano tube and the metal powder to the organic carrier ranges from 1: 3 to1: 5.7. According to the invention, the technical problems of low thermal conductivity, low electric conductivity and poor shear strength after the existing nano copper paste is sintered are solved, and the electric conductivity, the thermal conductivity, the shear strength and the connection strength of a sintered layer are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor chip packaging, more specifically, to a paste for electrical interconnection Background technique [0002] Power electronic devices have been widely used in various fields of modern society, including power electronics, electric vehicles, automation systems and energy conversion. The requirements for new interconnect materials and advanced packaging are also increasing. Among them, the stability of interconnect materials under high voltage, high current and high temperature is extremely important to reliability. In addition to high melting point, high electrical conductivity, high thermal conductivity, and high mechanical strength, interconnect materials also have requirements for CTE matching between materials. very important. In the field of power semiconductor packaging, it is an urgent problem to seek low-temperature technology, high-temperature service, matching thermal expans...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/22H01B1/24H01B13/00
CPCH01B1/22H01B1/24H01B13/00
Inventor 刘起鹏周荃叶怀宇张国旗
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON
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