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Smelting method for high-purity low-oxygen recovery sputtering target material

A sputtering target, high-purity technology, applied in sputtering plating, metal material coating process, ion implantation plating, etc. problems, to achieve the effect of improving the utilization value, uniform distribution of ingot components, and low cost

Inactive Publication Date: 2020-03-27
成都建极微波技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing technology usually briquettes the recovered target material, and then uses an electron beam cooling bed melting furnace or an electric arc furnace to melt the ingot. Due to the characteristics of the equipment and process, the oxygen content after smelting remains the same even when the operating level is excellent. It will increase by 20-100ppm, which will easily cause the oxygen content of the remelted ingot to exceed the standard of high-purity metals, and the usable value will decrease

Method used

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Embodiment Construction

[0017] The smelting method of the high-purity low-oxygen recovery sputtering target of the present invention comprises the following specific steps:

[0018] 1) Detecting and analyzing the recovered target material, high-purity hypoxic metal crystal / powder, and its gas and impurity content, and calculating the dosage ratio of the recovered target material and the high-purity low-oxygen metal crystal / powder;

[0019] 2) According to the calculated dosage ratio, the length of the silo, and the length of the recycled target material, calculate the number of layers of the recovered target material after the silo is covered;

[0020] 3) Mix high-purity low-oxygen metal crystals / powders evenly and press them into blocks;

[0021] 4) Stack the recovered target material and the block, and cover the bin;

[0022] 5) Put the stacked recovered target material and block into the electron beam melting furnace to melt and cast ingots.

[0023] In step 1), the high-purity low-oxygen metal ...

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Abstract

The invention discloses a smelting method for a high-purity low-oxygen recovery sputtering target material. The smelting method comprises the following specific steps: 1) a recovered target material and high-purity low-oxygen metal crystals / powder are detected and analyzed; 2) the number of layers of the recovered target materials after a bin is fully paved with the recovered target materials is calculated according to the calculated dosage ratio, the bin length and the length of the recovered target material; 3) the high-purity low-oxygen metal crystal / powder is uniformly mixed and is pressedinto a block; 4) the recycled target material and the block body are stacked and fully pave the bin; and 5) the stacked recycled target materials and blocks are put into an electron beam smelting furnace for smelting and ingot casting. According to the method, the oxygen content of the recovered target remelting cast ingot is effectively reduced, the metal impurity content is balanced, cast ingotcomponents are distributed uniformly and stably and meet the requirements of industries such as semiconductors, the utilization value of the recovered target material is improved, and the productivity of high-purity metal is improved; moreover, the adopted equipment is existing equipment, extra investment is not needed, the cost is low, and the operation is simple.

Description

technical field [0001] The invention relates to the technical field of material recovery, in particular to a smelting method for recovering sputtering targets with high purity and low oxygen. Background technique [0002] The sputtering target refers to the sputtering source that forms various functional thin films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. Sputtering targets include metals, alloys, ceramics, borides, etc. Usually, the target is divided into two parts, the target body and the back plate, for reasons such as improving the conductivity of the target and reducing costs, and then connected together by welding. Generally, the recycled sputtering target refers to the target after the back plate is completely peeled off. However, the existing technology usually briquettes the recovered target material, and then uses an electron beam cooling bed melting ...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22B9/22C23C14/32
CPCC22B9/228C23C14/325C23C14/3414
Inventor 邓先树
Owner 成都建极微波技术有限公司
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