Smelting method for high-purity low-oxygen recovery sputtering target material
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 成都建极微波技术有限公司
- Publication Date
- 2020-03-27
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
technical field
[0001] The invention relates to the technical field of material recovery, in particular to a smelting method for recovering sputtering targets with high purity and low oxygen. Background technique
[0002] The sputtering target refers to the sputtering source that forms various functional thin films on the substrate by sputtering under appropriate process conditions through magnetron sputtering, multi-arc ion plating or other types of coating systems. Sputtering targets include metals, alloys, ceramics, borides, etc. Usually, the target is divided into two parts, the target body and the back plate, for reasons such as improving the conductivity of the target and reducing costs, and then connected together by welding. Generally, the recycled sputtering target refers to the target after the back plate is completely peeled off. However, the existing technology usually briquettes the recovered target material, and then uses an electron beam cooling bed melting ...