Si@SiC-Si3N4 electrode material based on catalytic nitridation method and preparation method thereof

An electrode material, nitriding technology, applied in chemical instruments and methods, nitrogen compounds, carbon compounds, etc., can solve the problems of limited porous materials, poor electrochemical performance, etc., and achieve low price, low cost, and excellent morphological characteristics. Effect

Active Publication Date: 2020-03-31
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This high densification and high strength performance limits its application as a porous material, especially when it is used as an electrode material with poor electrochemical performance

Method used

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  • Si@SiC-Si3N4 electrode material based on catalytic nitridation method and preparation method thereof
  • Si@SiC-Si3N4 electrode material based on catalytic nitridation method and preparation method thereof
  • Si@SiC-Si3N4 electrode material based on catalytic nitridation method and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A Si@SiC-Si Based on Catalytic Nitriding Method 3 N 4 Electrode material and its preparation method. The preparation method described in this embodiment is:

[0035] Step 1. Dissolve 5 parts by mass of catalyst in 1000 parts by mass of absolute ethanol, stir magnetically for 20 minutes, then add 100 parts by mass of silicon powder, stir magnetically for 15 minutes, then add 12.5 parts by mass of liquid phenolic resin, and stir magnetically 30 min, and finally dried at 90° C. for 30 h to obtain a catalyst-loaded precursor.

[0036] Step 2. Under nitrogen atmosphere conditions, first raise the temperature of the catalyst-loaded precursor to 1250°C at a rate of 4°C / min, and keep it for 3 hours; then raise the temperature to 1400°C at a rate of 2°C / min, keep it for 4 hours, cooling to prepare Si@SiC-Si based on catalytic nitridation method 3 N 4 electrode material.

[0037] The catalyst is iron nitrate nonahydrate.

[0038] Si@SiC-Si based on catalytic nitridation me...

Embodiment 2

[0040] A Si@SiC-Si Based on Catalytic Nitriding Method 3 N 4 Electrode material and its preparation method. The preparation method described in this embodiment is:

[0041] Step 1. Dissolve 10 parts by mass of catalyst in 1000 parts by mass of absolute ethanol, stir magnetically for 18 minutes, then add 100 parts by mass of silicon powder, stir magnetically for 17 minutes, then add 14 parts by mass of liquid phenolic resin, and stir magnetically 29 minutes, and finally dried at 95° C. for 29 hours to obtain a catalyst-loaded precursor.

[0042] Step 2. Under the condition of nitrogen atmosphere, first raise the temperature of the catalyst-loaded precursor to 1280°C at a rate of 4°C / min, and keep it for 3 hours; cooling to prepare Si@SiC-Si based on catalytic nitridation method 3 N 4 electrode material.

[0043] The catalyst is nickel nitrate hexahydrate.

[0044] Si@SiC-Si based on catalytic nitridation method prepared in this example 3 N 4 The specific capacitance va...

Embodiment 3

[0046] A Si@SiC-Si Based on Catalytic Nitriding Method 3 N 4 Electrode material and its preparation method. The preparation method described in this embodiment is:

[0047] Step 1. Dissolve 15 parts by mass of catalyst in 1000 parts by mass of absolute ethanol, stir magnetically for 17 minutes, then add 100 parts by mass of silicon powder, stir magnetically for 18 minutes, then add 16 parts by mass of liquid phenolic resin, and stir magnetically 28min, and finally dried at 100°C for 28h to obtain a catalyst-loaded precursor.

[0048] Step 2. Under nitrogen atmosphere conditions, first raise the temperature of the catalyst-loaded precursor to 1300°C at a rate of 4.5°C / min and keep it warm for 2.5h; then raise the temperature to 1430°C at a rate of 2.5°C / min and keep it warm for 3.5h , natural cooling, prepared Si@SiC-Si based on catalytic nitridation method 3 N 4 electrode material.

[0049] The catalyst is cobalt nitrate hexahydrate.

[0050] Si@SiC-Si based on catalyti...

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Abstract

The invention relates to a Si@SiC-Si3N4 electrode material based on a catalytic nitridation method and a preparation method thereof. The method comprises the following steps: dissolving 5-25 parts bymass of a catalyst in 1000 parts by mass of absolute ethyl alcohol, carrying out magnetic stirring for 15-20min, adding 100 parts by mass of silicon powder into the solution, carrying out magnetic stirring for 15-20min, adding 12.5-20 parts by mass of a liquid phenolic resin into the mixed solution, carrying out magnetic stirring for 25-30min, drying the solution at 90-110 DEG C for 24-30h to obtain a catalyst-loaded precursor, under the nitrogen atmosphere condition, heating the catalyst-loaded precursor to 1250-1350 DEG C at a rate of 4-5 DEG C / min, carrying out heat preservation for 2-3h, then heating the catalyst-loaded precursor to 1400-1450 DEG C at a rate of 2-3 DEG C / min, carrying out heat preservation for 3-4h, and carrying out natural cooling so as to obtain the Si@SiC-Si3N4 electrode material based on the catalytic nitridation method. According to the invention, the cost is low, the production process is simple, and the prepared product has excellent morphological characteristics, pseudocapacitance characteristics and excellent capacitance and high-rate performance.

Description

technical field [0001] The invention belongs to Si@SiC-Si 3 N 4 Electrode material technical field. It specifically relates to a Si@SiC-Si based on catalytic nitriding method 3 N 4 Electrode material and its preparation method. Background technique [0002] Multi-level and multiple compounding is a hot spot in the research of composite ceramic materials. Among them, SiC-Si 3 N 4 Composite materials are widely used in many fields such as iron and steel metallurgy, aerospace industry and nuclear industry because of their high strength, wear resistance, high temperature corrosion resistance, oxidation resistance and thermal shock resistance. In the preparation of SiC-Si 3 N 4 When composite materials, considering the uniform dispersion of raw materials, especially adding toughening phases such as whiskers or nanowires directly into the matrix, there will be obvious problems of whisker agglomeration and uneven mixing. Therefore, SiC-Si is usually prepared by in-situ ge...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/984C01B21/068C01B33/02
CPCC01B32/984C01B21/068C01B33/02C01P2004/80C01P2006/40C01P2004/04
Inventor 丁军陈洋邓承继王杏余超祝洪喜
Owner WUHAN UNIV OF SCI & TECH
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