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Ammonium polyphosphate memristor and preparation method thereof and application of ammonium polyphosphate memristor in preparation of artificial synaptic simulation device

An ammonium polyphosphate, memristor technology, applied in electrical components, biological neural network models, physical realization and other directions, to achieve the effect of fast preparation method and easy operation

Active Publication Date: 2020-04-03
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the urgent problem to be solved in simulating synapses is the nanosecond response speed between neurons

Method used

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  • Ammonium polyphosphate memristor and preparation method thereof and application of ammonium polyphosphate memristor in preparation of artificial synaptic simulation device
  • Ammonium polyphosphate memristor and preparation method thereof and application of ammonium polyphosphate memristor in preparation of artificial synaptic simulation device
  • Ammonium polyphosphate memristor and preparation method thereof and application of ammonium polyphosphate memristor in preparation of artificial synaptic simulation device

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preparation example Construction

[0028] The preparation method of the active layer of the memristor of the present invention is as follows, the ammonium polyphosphate aqueous solution is spin-coated on the conductive surface of the conductive substrate, and the active layer of the memristor is obtained after annealing treatment.

[0029] The preparation method of the ammonium polyphosphate memristor of the present invention is as follows: the ammonium polyphosphate aqueous solution is spin-coated on the conductive surface of the conductive substrate, and an electrode is prepared after annealing treatment to obtain the ammonium polyphosphate memristor.

[0030] In this paper, an ammonium polyphosphate sandwich device was prepared by using the spin-coating method, which exhibited the non-volatile behavior of the memristor, realized the rapid regulation of the memristor device at the micro-nanosecond level, and realized the simulation of artificial synapses.

Embodiment 1

[0032] Such as figure 1 As shown, the ammonium polyphosphate memristor of the present invention is divided into three layers, consisting of a glass ITO base layer, an inorganic polymer film layer and a gold electrode layer from bottom to top. Concrete preparation process is as follows:

[0033] (1) ITO glass (about 2 cm×2 cm in size) was first cleaned by washing powder (the cleaning standard is that the surface of ITO is bright and transparent without water stains), and then ultrasonically cleaned with ultrapure water, acetone and ethanol for 10 min, ITO was completely submerged in ethanol and sealed for use; ammonium polyphosphate (APP, Beijing Huawei Raycus Chemical Co., Ltd.) was added to water, and ultrasonicated for 10 min to obtain a 100 mg / mL ammonium polyphosphate solution;

[0034](2) Take out the ITO glass, wash it with a cleaning solution (30wt% hydrogen peroxide), immerse it in the cleaning solution for 3 seconds, rinse it with ultrapure water and dry it, measure...

Embodiment 2

[0044] The ammonium polyphosphate device prepared by spin coating on the substrate of conductive silica gel has a three-layer structure of conductive silica gel / ammonium polyphosphate film / gold, which has good flexibility. The conductive silica gel itself is like skin, so it can be used as electronic skin.

[0045] (1) Conductive silica gel (about 2 cm × 2 cm in size) was first cleaned by ethanol ultrasonically for 10 min, then cleaned with a cleaning solution (30wt% hydrogen peroxide), immersed in the cleaning solution for 3 seconds, and then cleaned with ultrapure water After rinsing, dry it, measure the conductive surface, and heat it at 40°C for 5 minutes with the conductive surface facing up; add ammonium polyphosphate (APP) to water, and sonicate for 10 minutes to obtain a 100 mg / mL ammonium polyphosphate solution;

[0046] (2) Use a dropper to drop-coat the above-mentioned ammonium polyphosphate solution on the conductive surface of the heated conductive silica gel, spin...

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Abstract

The invention discloses an ammonium polyphosphate memristor and a preparation method thereof and application of the ammonium polyphosphate memristor in preparation of an artificial synaptic simulationdevice, and aims to solve the problem that research and application of novel circuit components become crucial for a series of side effects such as chip heating while the size of an existing transistor device is continuously reduced to the limit. The nanoscale memristor provided by the invention has the advantages of being simple in structure, small in size, low in power consumption, good in flexibility, easy to integrate, good in compatibility with an mos system and the like. The nanoscale memristor is a currently known device closest to the synapse size and function and can further simulateartificial intelligence.

Description

technical field [0001] The invention belongs to the technical field of inorganic polymer materials. The inorganic polymer material ammonium polyphosphate is applied to the neighborhood of resistive random access memory for the first time, and specifically relates to a research on a flexible memristor based on ammonium polyphosphate to simulate artificial synapses. Background technique [0002] With the rapid development of electronic information in the information age, the invention of information storage and processing technology has become crucial. However, the size of the current transistor devices is continuously shrinking to the limit, accompanied by a series of side effects such as chip heating, so the research and application of new circuit components for information storage and processing has become crucial. Due to its simple structure, micro-nanometer size, low power consumption, easy integration and good compatibility with cmos systems, memristors have become the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00G06N3/06G06N3/063
CPCG06N3/061G06N3/065H10N70/20H10N70/881H10N70/011Y02D10/00
Inventor 路建美贺竞辉
Owner SUZHOU UNIV
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