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a defective wo 3 Preparation method of photoelectrode

A photoelectrode and defect technology, applied in the direction of electrodes, electrode shapes/types, electrolytic components, etc., can solve the problems of complex preparation process, high cost, harsh reaction conditions, etc., and achieve the effect of simple process, low cost and simple equipment

Active Publication Date: 2022-02-18
GUIZHOU INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional defect introduction methods often involve high-temperature inert atmosphere treatment, which not only requires harsh reaction conditions, but also requires complex and expensive preparation procedures.

Method used

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  • a defective wo <sub>3</sub> Preparation method of photoelectrode
  • a defective wo <sub>3</sub> Preparation method of photoelectrode
  • a defective wo <sub>3</sub> Preparation method of photoelectrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) WO 3 The preparation process of the photoelectrode is as follows: 3.3g of sodium tungstate was weighed and dissolved in 1000mL of deionized water, and stirred for 10 minutes to obtain a transparent and clear solution. Add 40 mL of HCl solution with a concentration of 5 mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, and then add 2.48 g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0027] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil wer...

Embodiment 2

[0029] (1) WO 3The preparation process of the photoelectrode is as follows: Weigh 8.25g of sodium tungstate and dissolve it in 1000mL of deionized water, and stir for 10 minutes to obtain a transparent and clear solution. Add 100 mL of HCl solution with a concentration of 5 mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, then add 6.2 g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0030] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil were simultane...

Embodiment 3

[0032] (1) WO 3 The preparation process of the photoelectrode is as follows: Weigh 16.5g of sodium tungstate and dissolve it in 1000mL of deionized water, and stir for 10 minutes to obtain a transparent and clear solution. Add 250mL of HCl solution with a concentration of 5mol / L to the above solution, stir for 10 minutes to obtain a yellow tungstic acid suspension, then add 12.4g of ammonium oxalate to obtain a transparent and clear solution. Put the cleaned FTO conductive glass with the conductive side down into the solution, and react in a water bath at 60°C for 8 hours to obtain bright yellow H 2 WO 4 electrode. The prepared H 2 WO 4 The electrode is placed in a muffle furnace and annealed at 500°C for 2 hours to obtain light yellow WO 3 electrode.

[0033] (2) Defect WO 3 The preparation process of the photoelectrode is as follows: the WO prepared in (1) 3 The electrode is connected to the Fe foil with a wire, and the WO 3 The electrode and Fe foil were simultaneo...

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Abstract

The present invention provides a defective WO 3 Preparation method of photoelectrode, WO 3 The electrode is grown on the conductive surface of the conductive glass by the method of water bath, and the WO 3 The electrode is connected with the metal foil, and then the WO 3 Electrode and metal foil are immersed in a certain concentration of electrolyte solution at the same time, WO 3 The color of the film gradually changes from yellow to blue, and defects appear on the surface of the material. WO 3 The light absorption properties and color change of the film can be controlled by controlling the reaction time, the reduction potential of the metal foil, and the concentration of the solution. The preparation method has simple process and is beneficial to large-scale preparation and production. This type of material will have great application prospects in photoelectric water splitting to produce hydrogen, chemochromism, solar cells, etc. The invention belongs to the technical field of photoelectrode improvement.

Description

technical field [0001] The present invention relates to a defective WO 3 The invention relates to a preparation method of a photoelectrode, which belongs to the technical field of photoelectrode improvement. Background technique [0002] With the rapid development of modern human society and the continuous growth of population, energy shortage has become the central problem restricting economic development, so all countries in the world are looking for new energy and energy-saving ways. Among many renewable and clean energy sources, the utilization of solar energy has attracted much attention, because solar energy is an inexhaustible, green and convenient natural energy source. According to the utilization of solar energy, it can be divided into three types, namely photoelectric conversion, photothermal conversion and photochemical conversion. As one of the photochemical conversion technologies of solar energy, the hydrogen production technology by photolysis of water has ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/049C25B11/03C25B1/04B82Y40/00
CPCC25B11/04C25B1/04B82Y40/00C25B1/55C25B11/031Y02E60/36
Inventor 张学亮蒋迪刘仪柯李杨罗大军
Owner GUIZHOU INST OF TECH
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